Two-dimensional(2D)ferromagnets with out-of-plane(OOP)magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage ***,a scalable appr...
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Two-dimensional(2D)ferromagnets with out-of-plane(OOP)magnetic anisotropy are potential candidates for realizing the next-generation memory devices with ultra-low power consumption and high storage ***,a scalable approach to synthesize 2D magnets with OOP anisotropy directly on the complimentary metal-oxide semiconductor(CMOS)compatible substrates has not yet been mainly explored,which hinders the practical application of 2D *** work demonstrates a cascaded space confined chemical vapor deposition(CS-CVD)technique to synthesize 2D FexGeTe_(2) *** weight fraction of iron(Fe)in the precursor controls the phase purity of the as-grown *** a result,high-quality Fe_(3)GeTe_(2) and Fe_(5)GeTe_(2) flakes have been grown selectively using the CS-CVD *** temperature(Tc)of the as-grown FexGeTe2 can be up to-280 K,nearly room *** thickness and temperature-dependent magnetic studies on the Fe_(5)GeTe_(2) reveal a 2D Ising to 3D XY ***,Terahertz spectroscopy experiments on Fe_(5)GeTe_(2) display the highest conductivity among other FexGeTe_(2) 2D *** results of this work indicate a scalable pathway for the direct growth and integration of 2D ternary magnets on CMOS-based substrates to develop spintronic memory devices.
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