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Pinning energies of organic semiconductors in high-efficiency organic solar cells

Journal of Semiconductors 2023年第3期44卷 52-61页

作者： Xian’e Li Qilun Zhang Xianjie Liu Mats Fahlman Laboratory of Organic Electronics Department of Science and Technology(ITN)Linköping UniversitySE-60174NorrköpingSweden Wallenberg Wood Science Center Department of Science and Technology(ITN)Linköping UniversitySE-60174NorrköpingSweden

With the emergence of new materials for high-efficiency organic solar cells(OSCs),understanding and finetuning the interface energetics become increasingly *** determination of the so-called pinning energies,one of the critical characteristics of the material to predict the energy level alignment(ELA)at either electrode/organic or organic/organic interfaces,are urgently needed for the new ***,pinning energies of a wide variety of newly developed donors and nonfullerene acceptors(NFAs)are measured through ultraviolet photoelectron *** positive pinning energies of the studied donors and the negative pinning energies of NFAs are in the same energy range of 4.3−4.6 eV,which follows the design rules developed for fullerene-based *** ELA for metal/organic and inorganic/organic interfaces follows the predicted behavior for all of the materials *** organic-organic heterojunctions where both the donor and the NFA feature strong intramolecular charge transfer,the pinning energies often underestimate the experimentally obtained interface vacuum level shift,which has consequences for OSC device performance.

关键词： organic semiconductors organic solar cells pinning energies integer charge transfer interface dipoles

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Experimental investigation on the instability for NiO/β-Ga_(2)O_(3) heterojunction-gate FETs under negative bias stress

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半导体学报:英文版 2023年第7期44卷 32-36页

作者： Zhuolin Jiang Xiangnan Li Xuanze Zhou Yuxi Wei Jie Wei Guangwei Xu Shibing Long Xiaorong Luo State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China School of Microelectronics University of Science and Technology of ChinaHefei 230026China

A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s)).Two different degradation mechanisms of the devices under negative bias stress(NBS)are *** low V_(G,s)for a short t_(s),NiO bulk traps trapping/de-trapping elec-trons are responsible for decrease/recovery of the leakage current,*** higher V_(G,s)or long t_(s),the device transfer char-acteristic curves and threshold voltage(V_(TH))are almost permanently negatively *** is because the interface dipoles are almost permanently ionized and neutralize the ionized charges in the space charge region(SCR)across the heterojunction inter-face,resulting in a narrowing *** provides an important theoretical guide to study the reliability of NiO/β-Ga_(2)O_(3) hetero-junction devices in power electronic applications.

关键词： NiO/β-Ga_(2)O_(3)heterojunction FET NBS instability bulk traps interface dipoles

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