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Bipolarized intrinsic faradaic layer on a semiconductor surface under illumination

National Science Review 2023年第4期10卷 114-122页

作者： Mengfan Xue Zhiqiang Chu Dongjian Jiang Hongzheng Dong Pin Wang Gengzhi Sun Yingfang Yao Wenjun Luo Zhigang Zou Eco-Materials and Renewable Energy Research Center (ERERC) Jiangsu Key Laboratory for Nano Technology National Laboratory of Solid State Microstructures and Department of Physics Nanjing University National Laboratory of Solid State Microstructures College of Engineering and Applied Sciences Nanjing University Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM) Nanjing Tech University

interface charge transfer plays a key role in the performance of semiconductors for different kinds of solar energy utilization, such as photocatalysis, photoelectrocatalysis, photochromism and photo-induced superhydrophilicity. In previous studies, different mechanisms have been used to understand interface charge transfer processes. However, the charge transfer mechanism at the solid/liquid interface remains a controversial topic. Here, taking TiO2as a model, we find and prove, via experiments, the new characteristic of photo-induced bipolarity of the surface layer(reduction faradaic layer and oxidation faradaic layer) on a semiconductor for the first time. Different from energy level positions in the classic surface states transfer mechanism, the potential window of a surface faradaic layer is located out of the forbidden band. Moreover,we find that the reduction faradaic layer and oxidation faradaic layer serve as electron and hole transfer mediators in photocatalysis, while the bipolarity or mono-polarity of the surface layer on a semiconductor depends on the applied potential in photoelectrocatalysis. The new characteristic of bipolarity can also offer new insights into the charge transfer process at the semiconductor/liquid interface for solar energy utilization.

关键词： semiconductor surface interface charge transfer reduction faradaic layer oxidation faradaic layer faradaic layer descriptor

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