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Physical analysis of normally-off ALD Al_(2)O_(3)/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique

引用

Chinese Physics B 2022年第9期31卷 511-518页

作者： Cheng-Yu Huang Jin-Yan Wang Bin Zhang Zhen Fu Fang Liu Mao-Jun Wang Meng-Jun Li Xin Wang Chen Wang Jia-Yin He Yan-Dong He School of Integrated Circuits Peking UniversityBeijing 100871China Beijing Chip Identification Technology Co. LtdBeijing 102200China

Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrate and Si sub-strate are *** is found that the performance of sapphire substrate device is better than that of silicon *** these two devices,the maximum drain current of sapphire substrate device(401 mA/mm)is 1.76 times that of silicon substrate device(228 mA/mm),and the field-effect mobility(μ_(FEmax))of sapphire substrate device(176 cm^(2)/V·s)is 1.83 times that of silicon substrate device(96 cm^(2)/V·s).The conductive resistance of silicon substrate device is 21.2Ω-mm,while that of sapphire substrate device is only 15.2Ω·mm,which is 61%that of silicon substrate *** significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al_(2)O_(3)/GaN *** studies show that(i)interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device,(ii)Both the border traps in Al_(2)O_(3) dielectric near Al_(2)O_(3)/GaN and the interface traps in Al_(2)O_(3)/GaN interface have a significantly effect on device channel mobility,and(iii)the properties of gallium nitride materials on different substrates are different due to wet *** research results in this work provide a reference for further optimizing the performances of silicon substrate devices.

关键词： atomic layer deposition Al_(2)O_(3)/GaN MOSFET normally-off interface/border traps thermal oxidation-assisted wet etching

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