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integrated optoelectronics with two-dimensional materials

National Science Open 2022年第3期1卷 59-86页

作者： Zhenzhou Cheng Rongxiang Guo Jiaqi Wang Yi Wang Zhengkun Xing Lei Ma Wei Wei Yu Yu Hon Ki Tsang Tiegen Liu School of Precision Instruments and optoelectronics Engineering Tianjin UniversityTianjin 300072China Key Laboratory of optoelectronics Information Technology Ministry of EducationTianjin 300072China College of Physics and Optoelectronic Engineering Shenzhen UniversityShenzhen 518060China Department of Electronic Engineering The Chinese University of Hong KongHong KongChina Tianjin International Center for Nanoparticles and Nanosystems Tianjin UniversityTianjin 300072China College of Optoelectronic Engineering Chongqing UniversityChongqing 400044China Key Laboratory of Optoelectronic Technology and System Ministry of EducationChongqing 400044China Wuhan National Laboratory for optoelectronics Wuhan 430074China School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhan 430074China

As we enter the post-Moore era,heterogeneous optoelectronic integrated circuits(OEICs)are attracting significant attention as an alternative approach to scaling to smaller-sized ***-dimensional(2D)materials,offering a range of intriguing optoelectronic properties as semiconductors,semimetals,and insulators,provide great potential for developing nextgeneration heterogeneous *** instance,Fermi levels of 2D materials can be tuned by applying electrical voltages,while their atomically thin geometries are inherently suited for the fabrication of planar devices without suffering from lattice *** the first graphene-on-silicon OEICs were demonstrated in 2011,2D-material heterogeneous OEICs have significantly *** date,researchers have a better understanding of the importance of interface states on the optical properties of chip-integrated 2D ***,there has been impressive progress towards the use of 2D materials for waveguide-integrated lasers,modulators,and *** this review,we summarize the history,status,and trend of integrated optoelectronics with 2D materials.

关键词： integrated optoelectronics two-dimensional materials heterogeneous integration silicon photonics

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Two-dimensional materials-based integrated hardware

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Science China(Information Sciences) 2023年第6期66卷 5-25页

作者： Zhuiri PENG Runfeng LIN Zheng LI Langlang XU Xiangxiang YU Xinyu HUANG Wenhao SHI Xiao HE Xiaohan MENG Lei TONG Xiangshui MIAO Lei YE School of integrated Circuit Wuhan National Laboratory for OptoelectronicsHuazhong University of Science and Technology Hubei Yangtze Memory Laboratories Department of Electronic Engineering and Materials Science and Technology Research Center The Chinese University of Hong Kong State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences

In recent years, two-dimensional(2D)materials-based fundamental preparing process such as high-quality wafer-level single crystal thin film synthesis technology and high-performance electrode preparing technology has developed rapidly. In addition, the integrated application prospect of 2D materials has been preliminarily verified, owing to the flat and clean interface between 2D materials and substrates. From the perspective of electronics and optoelectronics based on 2D materials, this paper will summarize the recent studies of integrated circuit hardware, integrated optoelectronic hardware, and hetero-integrated hardware,showing their advantages and potential application.

关键词： two-dimensional materials integrated circuit integrated sensor integrated optoelectronics

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Organic heterostructures composed of one-and two-dimensional polymorphs for photonic applications

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Science China Chemistry 2020年第10期63卷 1477-1482页

作者： Yue Yu Yi-Chen Tao Sheng-Nan Zou Zhi-Zhou Li Chang-Cun Yan Ming-Peng Zhuo Xue-Dong Wang Liang-Sheng Liao Department of Functional Nano&Soft Materials(FUNSOM) Soochow UniversitySuzhou 215123China Department of Organic optoelectronics Jiangsu Industrial TechnologyResearch Institute(JITR1)Wujiang 215211China

Organic heterostructures(OHSs)consist of organic micro/nanocrystals are of essential importance for the construction of integrated optoelectronics in the ***,the scarcity of materials and the problem of phase separation still hinder the fine synthesis of ***,based on theαphase one-dimensional(1D)microrods and theβphase 2D microplates of one organic compound 3,3′-((1 E,1′E)-anthracene-9,10-diylbis(ethane-2,1-diyl))dibenzonitril(m-B2BCB),we facilely synthesized the OHSs composed of these two polymorph phases,whose growth mechanism is attributed to the low lattice mismatch rate of5.8%between(001)plane ofαphase(trunk)and(010)crystal plane ofβphase(branch).Significantly,the multiport in/output channels can be achieved in the OHSs,which demonstrates the structure-dependent optical signals with the different output channels in the ***,our experiment exhibits the great prospect of polymorphism in OHSs,which could provide further applications on multifunctional organic integrated photonics circuits.

关键词： fine synthesis polymorph heterostructure integrated optoelectronics lattice mismatch

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Swept source optical coherence tomography based on non-uniform discrete fourier transform

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Chinese Optics Letters 2009年第10期7卷 941-944页

作者：吴彤丁志华王凯王川 State Key Lab of modern Optical Instrumentation Zhejiang University

A high-speed high-sensitivity swept source optical coherence tomography （SSOCT） system using a high speed swept laser source is developed. Non-uniform discrete fourier transform （NDFT） method is introduced in the SSOCT system for data processing. Frequency calibration method based on a Mach-Zender interferometer （MZI） and conventional data interpolation method is also adopted in the system for comparison. Optical coherence tomography （OCT） images from SSOCT based on the NDFT method, the MZI method, and the interpolation method are illustrated. The axial resolution of the SSOCT based on the NDFT method is comparable to that of the SSOCT system using MZI calibration method and conventional data interpolation method. The SSOCT system based on the NDFT method can achieve higher signal intensity than that of the system based on the MZI calibration method and conventional data interpolation method because of the better utilization of the power of source.

关键词： Block codes Calibration Data processing Discrete Fourier transforms integrated optoelectronics Interpolation Optical tomography Tomography

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Zero-bias high-responsivity high-bandwidth top-illuminated germanium p–i–n photodetectors

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Chinese Physics B 2014年第3期23卷 640-644页

作者：李冲薛春来刘智成步文李传波王启明 State Key Laboratory on integrated optoelectronics Institute of Semiconductors Chinese Academy of Sciences

We report efficient zero-bias high-speed top-illuminated p-i-n photodiodes （PDs） with high responsivity fabricated with germanium （Ge） films grown directly on silicon-on-insulator （SOI） substrates. For a 15 p-m-diameter device at room temperature, the dark current density was 44.1 mA/cm2 at -1 V. The responsivity at 1.55 μm was 0.30 A/W at 0 V. The saturation of the optical responsivity at 0 V bias revealed that this photodetector allows a complete photo-generated carrier collection without bias. Although the 3-dB bandwidth of the 15-p.m-diameter detector was 18.8 GHz at the reverse bias of 0 V, the detector responsivity was improved by one order of magnitude compared with that reported in the literature. Moreover, the dark current of the detector was significantly reduced.

关键词： germanium photodetectors integrated optoelectronics optical interconnections

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Millimeter-wave modulated optical pulse generated by pulse repetition rate multiplication and temporal Talbot effect

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Chinese Optics Letters 2008年第9期6卷 634-637页

作者：潘政清叶青蔡海文瞿荣辉方祖捷 Shanghai Institute of Optics and Fine Mechanics Chinese Academy of Sciences

A novel scheme was proposed to generate a millimeter-wave （MMW） optical pulse by combining pulse repetition rate multiplication （PRRM） technology and temporal Talbot effect （TTE）. A cascaded Mach- Zehnder interferometer （MZI） lattice was used for PRRM, and a linearly chirped fiber grating （LCFG） was used as TTE. The basic principle was analyzed by using a Gaussian input short pulse and its characteristics were discussed by numerical simulation. It is shown that the proposed scheme is feasible for MMW signal generation and has potential merits for practical application of radio over fiber （ROF） technology.

关键词： Computer simulation Electromagnetic waves integrated optoelectronics Light pulse generators Millimeter waves Photomultipliers Signal generators

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Monolithically integrated Laser Diode and Electroabsorption Modulator with Dual-Waveguide Spot-Size Converter Output

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Journal of Semiconductors 2005年第6期26卷 1094-1099页

作者：侯廉平王圩冯文朱洪亮周帆王鲁峰边静中国科学院半导体研究所光电子研究发展中心北京100083

A 1.60μm laser diode and electroabsorption modulator monolithically integrated with a novel dual-waveguide spot-size converter output for low-loss coupling to a cleaved single-mode optical fiber are *** devices emit in a single transverse and quasi single longitudinal mode with an SMSR of *** devices exhibit a 3dB modulation bandwidth of 15.0GHz,and modulator DC extinction ratios of *** output beam divergence angles of the spot-size converter in the horizontal and vertical directions are as small as 7.3°×18.0°,respectively,resulting in a 3.0dB coupling loss with a cleaved single-mode optical fiber.

关键词： laser diode electroabsorption modulator spot-size converter integrated optoelectronics optical coupling

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1.55μm Laser Diode Monolithically integrated with Spot-Size Converter Using Conventional Process 

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Journal of Semiconductors 2005年第3期26卷 443-447页

作者：侯廉平王圩朱洪亮中国科学院半导体研究所光电子研究中心北京100083

A novel 1 55μm laser diode with spot size converter is designed and fabricated using conventional photolithography and chemical wet etching *** the laser diode,a ridge double core structure is *** the spot size converter,a buried ridge double core structure is *** laterally tapered active core is designed and optically combined with the thin and wide passive core to control the size of *** laser diode threshold current is measured to be 40mA together with high slop efficiency of 0 35W/*** beam divergence angles in the horizontal and vertical directions are as small as 14 89°×18 18°,respectively,resulting in low coupling losses with a cleaved optical fiber (3dB loss).

关键词： laser diode spot size converters integrated optoelectronics optical coupling

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All-dielectric metameric filters for optically variable devices

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Chinese Optics Letters 2014年第11期12卷 31-34页

作者：卜轶坤郭榕李延凯孟增铀陈楠 Department of Electronic Engineering Xiamen University Xiamen 361005 China Energetic Opto (Fujian) Technology Co. Ltd Putian 351115 China

In order to increase the anti-counterfeiting performance of optically variable devices, the innovative interference security image structures based on metamerism have been developed. In this letter, we show a pair of all-dielectric metameric filters offering a hidden image effect with the color shift at a specific angle of observation. These filters are designed by two materials TiO/SiO2 based on the different angle color target optimization. The 6-layer- and 9-layer stacks are achieved and the performance of prototype filters prepared by remote plasma sputtering is shown. The color difference index of the experiment is up to 1.19, which shows good metameric matching effect.

关键词： Bit error rate Blue light emitting diodes integrated optoelectronics Orthogonal frequency division multiplexing Visible light communications White light emitting diodes

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integrated model optocouplers

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Semiconductor Photonics and Technology 1995年第1期1卷 77-80页

作者： LIYinghui QITianyou ChongqingoptoelectronicsResearchInstitute Yongchuan632163CHN ChongqingoptoelectronicsResearchInstitu

Utilizing hybrid integration *** integrated model optocouplers have successfully *** design,fabrication and characteristic parameters of the devices are presented.

关键词： integrated optoelectronics Hybrid integrated Circuits Optical Couplers Insulation

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