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Properties of Gallium Phosphide Thick Films Prepared on Zinc Sulfide Substrates by Radio-Frequency Magnetron Sputtering

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Journal of Materials Science & Technology 2010年第1期26卷 93-96页

作者： Yangping Li and Zhengtang Liu School of Materials Science and Engineering, Northwestern Polytechnical University, Xi an 710072, China School of Materials Science and Engineering Northwestern Polytechnical University Xi'an 710072 China

Radio-frequency （RF） magnetron sputtering was employed to prepare gallium phosphide （GAP） thick films on zinc sulfide （ZnS） substrates by sputtering a single crystalline GaP target in an Ar atmosphere. The infrared （IR） transmission properties, structure, morphology, composition and hardness of the film were studied. Results show that both amorphous and zinc-blende crystalline phases existed in the GaP film in almost stoichiometric amounts. The GaP film exhibited good IR transmission properties, though the relatively rough surface and loose microstructure caused a small loss of IR transmission due to scattering. The GaP film also showed a much higher haraness than the ZnS substrate, thereby providing good protection to ZnS.

关键词： Radio-frequency magnetron sputtering Gallium phosphide Thick film infrared transmission

N-type GaSb single crystals with high below-band gap transmission

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Chinese Physics B 2017年第10期26卷 442-445页

作者：白永彪赵有文沈桂英陈晓玉刘京明谢晖董志远杨俊杨凤云王凤华 Key Laboratory of Semiconductor Materials Science Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesInstitute of Semiconductors Chinese Academy of Sciences College of Materials Science and Opto-electronic Technology Univeristy of Chinese Academy of Sciences

Te-doped GaSb single crystals are studied by measuring Hall effect, infrared （IR） transmission and photoluminescence （PL） spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.

关键词： Te-doped GaSb infrared transmission native defects PL

transmission Properties of a New Glass Ceramic and Doped with Co^(2+) as Saturable Absorber for 1.54 μm Er Glass Short Pulse Laser

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Journal of Wuhan University of Technology(Materials Science) 2012年第1期27卷 54-57页

作者： YU Chunlei CHEN Li FENG Suya HE Dongbing WANG Meng HU Lili Key Laboratory of Materials for High Power Laser Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China

The preparation and characteristics of a new transparent glass ceramic were described. Crystal phase particles with nanometer size were successfully precipitated in glass matrix, which was confirmed to be one of indium aluminum zinc oxide compounds （InxAlrZn2O）. The presence of aluminum （A1） and indium （In） impurities in the zinc oxides （ZnO） crystal lattice leads to some changes of the carrier concentration in the material and then promote the sharply changes of transmission spectra in IR range wavelength. And subsequently, the IR cut-off edge blue shifted from 5.5 pm in base glass to 3 μm in transparent glass ceramic sample. Furthermore, passive Q switched 1.54 ktm Er glass laser pulses with pulse energy of 10 mJ and pulse width of 800 ns were successfully obtained by using the cobalt doped transparent glass ceramic as a saturable absorber.

关键词： glass-ceramics infrared transmission Co2+ doped saturable absorber Er glass laser