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Magnesium incorporation efficiencies in Mg_xZn_(1-x)O films on ZnO substrates grown by metalorganic chemical vapor deposition

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Chinese Physics B 2017年第6期26卷 465-470页

作者：胡启昌丁凯 College of Mechanical and Electronic Engineering Fujian Agriculture and Forestry University Key Laboratory of Optoelectronic Materials Chemistry and Physics Fujian Institute of Research on the Structure of MatterChinese Academy of Sciences

We investigate the magnesium（Mg） incorporation efficiencies in MgxZn1-xO films on c-plane Zn-face ZnO substrates by using metalorganic chemical vapor deposition（MOCVD） technique. In order to deposit high quality MgxZn1-xO films,atomically smooth epi-ready surfaces of the hydrothermal grown ZnO substrates are achieved by thermal annealing in O2 atmosphere and characterized by atomic force microscope（AFM）. The AFM, scanning electron microscope（SEM）,and x-ray diffraction（XRD） studies demonstrate that the MgxZn1-xO films each have flat surface and hexagonal wurtzite structure without phase segregation at up to Mg content of 34.4%. The effects of the growth parameters including substrate temperature, reactor pressure and Ⅵ/Ⅱ ratio on Mg content in the films are investigated by XRD analysis based on Vegard＇s law, and confirmed by photo-luminescence spectra and x-ray photoelectron spectroscopy as well. It is indicated that high substrate temperature, low reactor pressure, and high Ⅵ/Ⅱratio are good for obtaining high Mg content.

关键词： MgxZn1-xO MOCVD incorporation efficiency ZnO bulk crystal

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Suppression and compensation effect of oxygen on the behavior of heavily boron-doped diamond films

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Chinese Physics B 2023年第3期32卷 554-560页

作者：郝礼才陈子昂刘东阳赵伟康张鸣汤琨朱顺明叶建东张荣郑有炓顾书林 School of Integrated Circuits Anhui UniversityHefei 230039China School of Electronic Science and Engineering Nanjing UniversityNanjing 210093China Collaborative Innovation Center of Solid-State Lighting and Energy-Saving Electronics Nanjing UniversityNanjing 210093China

This work investigates the suppression and compensation effect of oxygen on the behaviors and characteristics of heavily boron-doped microwave plasma chemical vapor deposition(MPCVD)diamond *** suppression effect of oxygen on boron incorporation is observed by an improvement in crystal quality when oxygen is added during the diamond doping process.A relatively low hole concentration is expected and verified by Hall effect measurements due to the compensation effect of oxygen as a deep donor in diamond.A low acceptor concentration,high compensation donor concentration and relatively larger acceptor ionization energy are then induced by the incorporation of oxygen;however,a heavily boron-doped diamond film with high crystal quality can also be *** formation of an oxygen–boron complex structure instead of oxygen substitution,as indicated by the results of x-ray photoelectron spectroscopy,is suggested to be more responsible for the observed enhanced compensation effect due to its predicted low formation ***,density functional theory calculations show that the boron–oxygen complex structure is easily formed in diamond with a formation energy of-0.83 *** work provides a comprehensive understanding of oxygen compensation in heavily boron-doped diamond.

关键词： diamond boron–oxygen co-doping incorporation efficiency ionization energy compensation boron–oxygen complex

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