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Smooth Surface Morphology of hydrogenated amorphous silicon film Prepared by Plasma Enhanced Chemical Vapor Deposition

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Plasma Science and Technology 2009年第5期11卷 569-575页

作者：闫许冯飞张进王跃林 State Key Laboratory of Transducer Technology Graduate School of Chinese Academy of Sciences

Influence of the parameters of plasma enhanced chemical vapor deposition （PECVD） on the surface morphology of hydrogenated amorphous silicon （α-Si：H） film was investigated. The root-mean-square （RMS） roughness of the film was measured by atomic force microscope （AFM） and the relevant results were analyzed using the surface smoothing mechanism of film deposition. It is shown that an α-Si：H film with smooth surface morphology can be obtained by increasing the PH3/N2 gas flow rate for 10% in a high frequency （HF） mode. For high power, however, the surface morphology of the film will deteriorate when the Sill4 gas flow rate increases. Furthermore, optimized parameters of PECVD for growing the film with smooth surface were obtained to be Sill4：25 sccm （standard cubic centimeters per minute）, At： 275 sccm, 10%PH3/N2：2 sccm, HF power： 15 W, pressure： 0.9 Torr and temperature： 350℃. In addition, for in thick fihn deposition on silicon substrate, a N20 and NH3 preprocessing method is proposed to suppress the formation of gas bubbles.

关键词： hydrogenated amorphous silicon film surface roughness plasma enhancedchemical vapor deposition

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SiH interacting with Si surfaces:MD study

SiH interacting with Si surfaces:MD study

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第十五届全国等离子体科学技术会议

作者： Zhao Cheng-li~(1,2),Sun Wei-zhong~3,Zhang Jun-yuan~3,Chen Feng~(1,2),He Ping-ni~1,Lu Xiao-dan~1, F.Gou~(3,4+) (1.Institute of Plasma Surface Interactions,Guizhou University,Guiyang 550025,China 2.College of science,Guizhou University,Guiyang 550025,China 3.Key Lab of Radiation Physics & Technology Ministry of Education,Chengdu 610064,China 4.FOM Institute for Plasma Physics,3439 MN Nieuwegein,the Netherlands)

silicon films are deposited using plasma enhanced chemical vapor deposition(PECVD) through SiHi-containing glow *** this process,interactions between radicals(H,SiH,SiH and SiH ***) and the silicon surface play an important role during ***,it is very difficult to experimentally characterize these *** order to understand the interaction mechanism and formation of the film,molecular dynamics(MD) simulations were used to study the effect of incident energy on formation of amorphous silicon(α-Si:H) *** incident energies were chose to 1,10,25,50,75 and 100 *** simulation results show that with increasing incident energy,the dissociation rate of SiH increases,the deposition rate of H atoms decrease and deposition rate of Si atoms almost remain *** is found that the sputtering and scattering of H atoms increase with increasing incident *** addition,in formed films SiH group is dominant hydrogenated amorphous film.

关键词： deposited PECVD molecular dynamics hydrogenated amorphous silicon film

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SiH Interacting with Si surface and Formation of hydrogenated silicon films:MD study

SiH Interacting with Si surface and Formation of Hydrogenate...

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第十四届全国核物理大会暨第十届会员代表大会

作者： Chen Feng1,2, Zhao Cheng-li1,2, Sun Wei-zhong3, He Ping-ni1,Liu Hua-min3, Zhang Jun-yuan3, Lu Xiao-dan1, F. Gou 3,4 1Institute of Plasma Surface Interactions, Guizhou University, Guiyang 550025, China 2College of science, Guizhou University, Guiyang 550025, China 3Key Lab of Radiation Physics & Technology Ministry of Education, Chengdu 610064, China 4FOM Institute for Plasma Physics, 3439 MN Nieuwegein, the Netherlands

silicon films can be deposited inexpensively at low temperatures and uniformly over large areas using plasma enhanced chemical vapor deposition(PECVD)through

关键词： deposited PECVD molecular dynamics hydrogenated amorphous silicon film

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Molecular dynamics simulation of the energy effect SiH3+ interaction with Si surface

Molecular dynamics simulation of the energy effect SiH3+ int...

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第十五届全国等离子体科学技术会议

作者： Tian Shu-ping~1,Sun Wei-zhong~1,Zhang yan-po~1,Zhao Cheng-li~2,Chen Feng~2,F.Gou~(1,3) (1.Key Lab of Radiation Physics & Technology Ministry of Education,Chengdu 610064,China 2.College of science,Guizhou University,Guiyang 550025,China 3.FOM Institute for Plasma Physics,3439 MN Nie jwegein,the Netherlands)

During fabricating hydrogenated silicon films using plasma enhanced chemical vapor deposition method(PECVD),the interactions between SiH ions and surfaces signifincantly affect performances of the deposited *** order to understant the interactions at the atomic scale,we report the molecular dynamics simulations of interactions between SiH and Si *** simulation results show that the deposition rate of Si atoms decrease with increasing incident energy and the deposition rate of H atoms first increased and then *** sedimentary Si,H atoms and the sample surface atoms form hydrogenated amorphous silicon *** hydrogenated amorphous silicon films SiH,SiH and SiH groups are *** the film SiH-SiH, SiH-SiH and SiH-SiH bonds are dominant and few SiH-SiH and SiH-SiH bonds are *** film component changes with depth of hydrogenated amorphous silicon *** discuss the deposition mechanism.

关键词： Molecular dynamics simulation deposition rate hydrogenated amorphous silicon film film component.

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