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Nanoscale visualization of hot carrier generation and transfer at non-noble metal and oxide interface

Journal of Materials Science & Technology 2022年第3期98卷 151-159页

作者： Ranveer Singh Qadeer Akbar Sial Seung-ik Han Sanghee Nah Ji-Yong Park Hyungtak Seo Department of Materials Science and Engineering Ajou UniversitySuwon16499Republic of Korea Department of Energy Systems Research Ajou UniversitySuwon16499Republic of Korea Seoul Center Korea Basic Science InstituteSeoul02841Republic of Korea Department of Physics Ajou UniversitySuwon16499Republic of Korea

The conversion efficiency of energy-harvesting devices can be increased by utilizing hot-carriers(HCs).However,due to ultrafast carrier-carrier scattering and the lack of carrier injection dynamics,HC-based devices have low efficiencies.In the present work,we report the effective utilization of HCs at the nanoscale and their transfer dynamics from a non-noble metal to a metal oxide interface by means of real-space photocurrent mapping by using local probe techniques and conducting femtosecond transient absorption(TA)measurements.The photocurrent maps obtained under white light unambiguously show that the HCs are injected into the metal oxide layer from the TiN layer,as also confirmed by conductive atomic force microscopy.In addition,the increased photocurrent in the bilayer structure indicates the injection of HCs from both layers due to the broadband absorption efficiency of TiN layer,passivation of the surface states by the top TiN layer,and smaller barrier height of the interfaces.Furthermore,electrostatic force microscopy and Kelvin probe force microscopy provide direct evidence of charge injection from TiN to the MoO_(x)film at the nanoscale.The TA absorption spectra show a strong photo-bleaching signal over wide spectral range and ultrafast decaying behavior at the picosecond time scale,which indicate efficient electron transfer from TiN to MoO_(x).Thus,our simple and effective approach can facilitate HC collection under white light,thereby achieving high conversion efficiency for optoelectronic devices.

关键词： Non-noble metal hot carrier Real-space photocurrent mapping Local-probe force microscopy

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Tetraphenylethene-based hole transporting material for highly efficient and stable perovskite solar cells

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Science China Chemistry 2024年第6期67卷 2009-2015页

作者： Peng Wang Pei Yuan Chenghao Ge Rongjun Zhao Lin Xie Yong Hua School of Materials and Energy Yunnan UniversityKunming650091China

2,2,7,7-Tetrakis-(N,N-di-p-methoxyphenylamine)-9,9-spirobifluorene(Spiro-OMeTAD)has been identified as the most widely used and effective hole transporting material(HTM)in perovskite solar cells(PSCs).However,the complicated multistep synthesis and low intrinsic hole mobility of Spiro-OMe TAD limit its commercialized application.Therefore,developing highly efficient HTMs with less synthetic steps becomes increasingly important.Moreover,understanding hot carriers transfer dynamics at the interface of perovskite layer and hole transport layer is crucial for further enhancing PSCs performance towards Shockley-Queisser limit,which still lacks full investigation to date.Herein,a new HTM based on tetraphenylethene(WP1)was successfully synthesized by a simple one-step reaction process.It was found that WP1-based HTM exhibits more matched energy level,higher hole mobility and conductivity than those of the control Spiro-OMe TAD.The femtosecond transient absorption results reveal that the transfer rate of hot holes in perovskite/WP1 sample is four times higher than that of perovskite/Spiro-OMeTAD,thereby helping enhance the device performance.Consequently,the efficiency of PSCs is enhanced to 24.04%(WP1)from 22.85%(Spiro-OMeTAD).Moreover,the un-encapsulated device prepared with WP1 exhibits better long-term stability,retaining 87%of its initial PCE value after storing for 72 days under air environment,while the reference device shows76%of its initial value.This work indicates that simple tetraphenylethene-based organic small molecule could be a very promising HTM candidate for highly efficient PSCs,and gives some significant insights for understanding intrinsic hot carriers transfer dynamics in device.

关键词： tetraphenylethene hole transporting material perovskite solar cells mobility hot carrier

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Direct observation of the plasmon-enhanced palladium catalysis with single-molecule fluorescence microscopy

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Nano Research 2023年第7期16卷 8817-8826页

作者： Zhuoyao Li Rajkumar Devasenathipathy Junjie Wang Liuyingzi Yu Yan Liang Huixiang Sheng Yameng Zhu Hai Li Hiroshi Uji-i Xiao Huang Gang Lu School of Flexible Electronics(Future Technologies) Key Laboratory of Flexible Electronicsand Institute of Advanced MaterialsNanjing Tech University(NanjingTech)Nanjing 211816China Department of Chemistry KU LeuvenCelestijnenlaan 200FLeuven 3001Belgium Research Institute for Electronic Science Hokkaido UniversityN20W10Kita wardSapporoHokkaido 001-0020Japan National Laboratory of Solid State Microstructures Nanjing UniversityNanjing 210093China

Plasmonic nanostructures have been proved effective not only in catalyzing chemical reactions,but also in improving the activity of non-plasmonic photocatalysts.It is essential to reveal the synergy between the plasmonic structure and the non-plasmonic metal photocatalyst for expounding the underlying mechanism of plasmon-enhanced catalysis.Herein,the enhancement of resazurin reduction at the heterostructure of silver nanowire(AgNW)and palladium nanoparticles(PdNPs)is observed in situ by single-molecule fluorescence microscopy.The catalysis mapping results around single AgNW suggest that the catalytic activity of PdNPs is enhanced for~20 times due to the excitation of localized surface plasmon resonance(LSPR)in the vicinity of the AgNW.This catalysis enhancement is also highly related to the wavelength and polarization of the excitation light.In addition,the palladium catalysis is further enhanced by~10 times in the vicinity of a roughened AgNW or a AgNW-AgNW nanogap because of the improvement of catalytic hotspots.These findings clarify the contribution of plasmon excitation in palladium catalysis at microscopic scale,which will help to deepen the understanding of the plasmon-enhanced photocatalysis and provide a guideline for developing highly efficient plasmon-based photocatalysts.

关键词： surface plasmon palladium nanoparticles photocatalysis enhancement hot carrier super-resolution fluorescence microscopy

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A unified drain current 1/f noise model for GaN-based high electron mobility transistors

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Chinese Physics B 2014年第2期23卷 183-188页

作者：刘宇安庄奕琪马晓华杜鸣包军林李聪 School of Microelectronics Xidian University

In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor （HEMT）. Based on both mobility fluctuation and carrier number fluctuation in a two- dimensional electron gas （2DEG） channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Agm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Agm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the A1GaN/GaN HEMTs.

关键词： 1/f noise hot carrier piezoelectric effects AlGaN/GaN HEMT

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