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Achievable hole concentration at room temperature as a function of Mg concentration for MOCVD-grown p-GaN after sufficient annealing

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Journal of Semiconductors 2024年第8期45卷 67-73页

作者： Siyi Huang Masao Ikeda Feng Zhang Minglong Zhang Jianjun Zhu Shuming Zhang Jianping Liu School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of SciencesSuzhou 215123China Key Laboratory of Nanodevices and Applications Chinese Academy of SciencesSuzhou 215123China

Relationship between the hole concentration at room temperature and the Mg doping concentration in p-GaN grown by MOCVD after sufficient annealing was studied in this *** annealing conditions were applied to obtain sufficient activation for p-GaN samples with different Mg doping *** concentration,resistivity and mobility were characterized by room-temperature Hall *** Mg doping concentration and the residual impurities such as H,C,O and Si were measured by secondary ion mass spectroscopy,confirming negligible compensations by the *** hole concentration,resistivity and mobility data are presented as a function of Mg concentration,and are compared with literature *** appropriate curve relating the Mg doping concentration to the hole concentration is derived using a charge neutrality equation and the ionized-acceptor-density[N-(A)^(-)](cm^(−3))dependent ionization energy of Mg acceptor was determined asE_(A)^(Mg)=184−2.66×10^(−5)×[N_(A)^(-)]1/3 meV.

关键词： p-GaN hole concentration electrical properties annealing ionization energy

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The impact of germanium in strained Si/relaxed Si_(1-x)Ge_x on carrier performance in non-degenerate and degenerate regimes

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Journal of Semiconductors 2013年第6期34卷 1-4页

作者： EngSiew Kang S Anwar M T Ahmadi Razali Ismail Faculty of Electrical Engineering Universiti Teknologi Malaysia 81300 SkudaiJohor Malaysia Pennsylvania State University Altoona CollegePennsylvania16601USA

The impact of the fraction of germanium on the carrier performance of two-dimensional strained silicon, which embraces both the non-degenerate and degenerate regimes,is *** this model,the Fermi integral of order zero is *** impact of the fraction of germanium on the relaxed Si_（1-x）Ge_x substrate（x）,carrier concentration and temperature is *** is revealed that the effect of x on the hole concentration is dominant for a normalized Fermi energy of more than three,or in other words the non-degenerate *** the contrary, the x gradient has less influence in the degenerate ***,by increasing x there is an increase in the intrinsic velocity,particularly with high carrier concentration and temperature.

关键词： germanium intrinsic velocity SiGe hole concentration two dimensional

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A novel highly negative dispersion photonic crystal fiber

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Optoelectronics Letters 2009年第1期5卷 34-36页

作者：李宏雷娄淑琴郭铁英陈卫国王立文简水生 Key Lab.on All Optical Network & Advanced Telecommunication Network of Education Mianistry of China Institute of Lightwave TechnologyBeijing Jiaotong University

Based on the full-vector finite element method,a novel structure of highly negative dispersion photonic crystal fiber with the central index dip in the low germanium doped core is *** highly negative dispersion can be obtained at the wavelength of 1.55 μm by adjusting the pitch,the air-hole diameter in the third ring,the germanium doped concentration and the influence of central index dip.

关键词： Crystal structure Crystal whiskers Germanium hole concentration Laser pulses Photonic crystals

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