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Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

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Journal of Semiconductors 2011年第11期32卷 24-30页

作者： Moumita Mukherjee Pravash R.Tripathy S.P.Pati Centre of Millimeter-Wave Semiconductor Devices and Systems Institute of Radio Physics and ElectronicsUniversity of Calcutta Puroshottam Institute of Engineering & Technology RourkelaOdishaIndiaSambalpur University AICTE Emeritus Professor NISTPelur HillsBerhampurOdishaIndia

Static and dynamic properties of both complementary n-Ge/p-Si and p-Ge/n-Si hetero-junction DoubleDrift impatt diodes have been investigated by an advanced and realistic computer simulation technique, devel- oped by the authors, for operation in the Ka-, V- and W-band frequencies. The results are further compared with corresponding Si and Ge homo-junction devices. The study shows high values of device efficiency, such as 23%, 22% and 21.5%, for n-Ge/p-Si impatts at the Ka, V and W bands, respectively. The peak device negative con- ductances for n-Si/p-Ge and n-Ge/p-Si hetero-junction devices found to be 50.7× 10^6 S/m^2 and 71.3× 106 S/m^2, which are -3-4 times better than their Si and Ge counterparts at the V-band. The computed values of RF powerdensity for n-Ge/p-Si hetero-junction impatts are 1.0 ×10^9, 1.1 × 10^9 and 1.4× 10^9 W/m^2, respectively, for Ka-, V- and W-band operation, which can be observed to be the highest when compared with Si, Ge and n-Si/p-Ge devices. Both of the hetero-junctions, especially the n-Ge/p-Si hetero-junction diode, can thus become a superior RF-power generator over a wide range of frequencies. The present study will help the device engineers to choose a suitable material pair for the development of high-power MM-wave impatt for applications in the civil and defense-related arena.

关键词： admittance characteristics double drift diode high-power impatt high-efficiency MM-wave de- vice Si/Ge and Ge/Si material systems

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