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Selective hydrogenation improves interface properties of high-k dielectrics on 2D semiconductors

Nano Research 2022年第5期15卷 4646-4652页

作者： Yulin Yang Tong Yang Tingting Song Jun Zhou Jianwei Chai Lai Mun Wong Hongyi Zhang Wenzhang Zhu Shijie Wang Ming Yang Fujian Provincial key Laboratory of Optoelectronic Technology and Devices School of Optoelectronic and Communication EngineeringXiamen University of TechnologyXiamen 361024China Department of Applied Physics The Hong Kong Polytechnic UniversityHung HomKowloonHong Kong SARChina College of Physics and Space Science China West Normal UniversityNanchong 637002China Institute of Materials Research and Engineering Agency for ScienceTechnology and Research(A*STAR)2 Fusionopolis WayInnovis 138634Singapore

The integration of high-k dielectrics with two-dimensional(2D)semiconductors is a critical step towards high-performance nanoelectronics,which however remains challenging due to the high density of interface states and the damage to the monolayer 2D *** this study,we propose a selective hydrogenation strategy to improve the interface properties while the 2D semiconductors are not *** the interface of monolayer molybdenum disulfide(MoS_(2))and silicon nitride as an example,we show substantially improved interface properties for electronic applications after the interfacial hydrogenation,as evidenced by reduced inhomogeneous charge redistribution,increased band offset,and nearly intact electronic properties of MoS_(2).Importantly,this hydrogenation process selectively occurs only at the silicon nitride surface and is compatible with the current semiconductor fabrication *** further show that this strategy is general and applicable to other interfaces between high-k dielectrics and 2D semiconductors such as hafnium dioxide(HfO_(2))on the monolayer MoS_(2).Our results demonstrate a simple yet viable way to improve the integration of high-k dielectrics on a broad range of 2D transition metal disulfide semiconductors,shedding light on practical electronic and optoelectronic applications.

关键词： two-dimensional(2D)materials high-k dielectrics molybdenum disulfide interfacial properties transition metal disulfide(TMD)

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Flat-band voltage shift in metal-gate/high-k/Si stacks

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Chinese Physics B 2011年第9期20卷 381-391页

作者：黄安平郑晓虎肖志松杨智超王玫朱剑豪杨晓东 Department of Physics Beihang University Department of Physics and Materials Science City University of Hong Kong Department of Electrical and Computer Engineering University of Florida

In metal-gate/high-k stacks adopted by the 45 nm technology node, the fiat-band voltage （Vfb） shift remains one of the most critical challenges, particularly the flat-band voltage roll-off （Vfb roll-off） phenomenon in p-channel metal- oxide-semiconductor （pMOS） devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the Vfb shift and the origin of the Vfb roll-off in the metal-gate/high-k pMOS stacks are reviewed. Methods that can alleviate the Vfb shift phenomenon are summarized and the future research trend is described.

关键词： flat-band voltage shift Vfb roll-off metal gate high-k dielectrics

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Electrical Properties of Compositional Al₂O₃ Supplemented HfO₂ Thin Films by Atomic Layer Deposition

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Materials Sciences and Applications 2022年第9期13卷 491-505页

作者： Yuxi Wang Yong Zhang Tingqu Wu Weizheng Fang Xufeng kou Tao Wu Jangyong kim School of Information Science and Technology ShanghaiTech University Shanghai China Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai China University of the Chinese Academy of Sciences Beijing China ShanghaiTech Quantum Device Laboratory ShanghaiTech University Shanghai China

With advanced research for dielectrics including capacitors in DRAMs, decoupling filters in microcircuits and insulating gates in transistors, a lot of demand for the new challenging of high-k materials in semiconductor industries has been emerged. This study explores and addresses the experimental approach for composite materials with one of the major concerns of high capacitance, and low leakage, as well as ease of integration technology. The characteristics of Al2O3 supported HfO2 (AHO) thin films for a series of different Hf ratios with Al2O3 dielectrics by atomic layer deposition demonstrated as a candidate material. A composite AHO films with the homogeneous compositions of Al and Hf atoms into the Al-Hf-O mixed oxide system could stabilize the polycrystalline structure with increasing of dielectric constant (k) and decreasing of leakage current density, as well as a higher breakdown voltage than HfO2 film on its own. 70 nm thick AHO thin films with different composition of Al and Hf contents were prepared by atomic layer deposition technique on titanium nitride (TiN) and silicon dioxide (SiO2) coated Si substrates. Photolithography and metal lift-off technique were used for the device fabrication of the metal-insulator-metal (MIM) capacitor structures. AHO films on TiN/SiO2/Si were measured by semiconductor analyzer and source/ measure system with probe station in the voltage range from -5 to 5 V with a frequency range from 10 kHz to 1 MHz were used to conduct capacitance-voltage (C-V) measurements with low/medium frequency range and current-voltage (I-V) measurements. It was found that Au/AHO/TiN/SiO2/Si MIM capacitors demonstrate a capacitance density of 1.5 - 4.5 fF/μm2 at 10 kHz, a loss tangent of 0.02 - 0.04 at 10 kHz, dielectric constant of 11.7 - 35.5 depending on the composition and a low leakage current of 1.7 × 10-9 A/cm2

关键词： high-k dielectrics Hafnium Oxide Aluminium Oxide Composites Thin Film Capacitors Atomic Layer Deposition Microfabrication

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Challenges of DRAM and Flash Scaling-Potentials in Advanced Emerging Memory Devices

Challenges of DRAM and Flash Scaling-Potentials in Advanced ...

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2004 7th International Conference on Solid-State and Integrated Circuits Technology（ICSICT 2004）

作者： Luan C.Tran Micron Technology Inc. 8000 S.Federal WayBoiseIdaho USA

＜正＞Dynamic random access memory（DRAM） and Flash nonvolatile memory（NVM） continue to be scaled down to sub-90nm dimensions,a trend expected to extend through the next few ***,however,arise in both device and process technology for sub-65nm geometries in both types of *** paper analyzes these challenges and presents emerging device candidates with their potentials for high volume realization and opportunities for research and development in this area.

关键词： DRAM Flash nonvolatile memory(NVM) nanocrystal high-k dielectrics

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