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Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors:Modeling,Optimization Using Particle Swarm Intelligence,and Fabrication

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Computer Modeling in Engineering & Sciences 2019年第6期119卷 577-591页

作者： P.Reena Monica V.T.Sreedevi School of Electronics Engineering VIT ChennaiVandalur-Kelambakkam RoadChennai603103India School of Electrical Engineering VIT ChennaiVandalur-Kelambakkam RoadChennai603103India

A mathematical model and experimental analysis of the impact of oxide thickness on the ambipolar conduction in Schottky Barrier Carbon Nanotubes(CNTs)Field Effect Transistor(SB CNTFETs)is *** of ambipolar conduction in SB CNTFETs is imperative in order to establish them as the future of IC *** ambipolar nature of SB CNTFETs leads to a great amount of leakage *** a gate oxide dielectric of thickness,tox^50 nm suppresses the ambipolar *** an SB CNTFET,it is the electric field at the source/drain contacts that control the conductance and the band bending length at the contacts is defined by ***,tox is the prime parameter that influences the width of the Schottky barrier and the current in the subthreshold *** to the wide SB,there is a loss in on-current due to tunneling,but the current due to thermionic emission is increased by employing a high-κdielectric such as Zirconium dioxide(ZrO2).This work proposes an approach to suppress ambipolar behavior in SB CNTFETs without decreasing the on *** thickness and dielectric constant of the gate oxide are optimized using the particle swarm optimization(PSO)algorithm to achieve suppression of ambipolar conduction without any loss in *** proposed SB CNTFET was modeled using *** demonstration of the suppression of ambipolar property is also *** SB CNTFETs are fabricated using high-κdielectric such as ZrO2 with different thickness.A device with thin(~5 nm)gate oxide and another device with thick(~50 nm)gate oxide were *** the experimental results,it is observed that the device with the thin gate oxide exhibited ambipolar characteristics and the device with the thick gate oxide did not exhibit ambipolar *** increase in thickness,tox,ensures suppression of ambipolar behavior.

关键词： Ambipolar conduction Carbon nanotubes high-κgate oxide Schottky barrier

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