检索结果-南通市图书馆

Chinese Physics B 2015年第4期24卷 525-529页

作者：于新海柴常春刘阳杨银堂席晓文 Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University

The high power microwave （HPM） damage effect on the AIGaAs/InGaAs pseudomorphic high electron mobility transistor （pHEMT） is studied by simulation and experiments. Simulated results suggest that the HPM damage to pHEMT is due to device burn-out caused by the emerging current path and strong electric field beneath the gate. Besides, the results demonstrate that the damage power threshold decreases but the energy threshold slightly increases with the increase of pulse-width, indicating that HPM with longer pulse-width requires lower power density but more energy to cause the damage to pHEMT. The empirical formulas are proposed to describe the pulse-width dependence. Then the experimental data validate the pulse-width dependence and verify that the proposed formula P = 55τ^-0.06 is capable of quickly and accurately estimating the HPM damage susceptibility of pHEMT. Finally the interior observation of damaged samples by scanning electron microscopy （SEM） illustrates that the failure mechanism of the HPM damage to pHEMT is indeed device bum-out and the location beneath the gate near the source side is most susceptible to bum-out, which is in accordance with the simulated results.

关键词： pHEMT damage mechanism high power microwave pulse-width

Damage effect and mechanism of the GaAs high electron mobility transistor induced by high power microwave

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2016年第4期25卷 461-466页

作者：刘阳柴常春杨银堂孙静李志鹏 Ministry of Education Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Xidian University Xi'an 710071 China Space Payload System Innovation Center China Academy of Space Technology Xi'an 710100 China

In this paper, we present the damage effect and mechanism of high power microwave （HPM） on AIGaAs/GaAs pseudomorphic high-electron-mobility transistor （pHEMT） of low-noise amplifier （LNA）. A detailed investigation is carried out by simulation and experiment study. A two-dimensional electro-thermal model of the typical GaAs pHEMT induced by HPM is established in this paper. The simulation result reveals that avalanche breakdown, intrinsic excitation, and thermal breakdown all contribute to damage process. Heat accumulation occurs during the positive half cycle and the cylinder under the gate near the source side is most susceptible to burn-out. Experiment is carried out by injecting high power microwave into GaAs pHEMT LNA samples. It is found that the damage to LNA is because of the burn-out at first stage pHEMT. The interiors of the damaged samples are observed by scanning electron microscopy （SEM） and energy dispersive spectrometer （EDS）. Experimental results accord well with the simulation of our model.

关键词： low noise amplifier HEMT high power microwave damage effect

Temperature dependence of latch-up effects in CMOS inverter induced by high power microwave

在线全文

学校读者我要写书评

暂无评论

Journal of Semiconductors 2014年第8期35卷 115-120页

作者：于新海柴常春任兴荣杨银堂席晓文刘阳 School of Microelectronics Xidian University Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices

The temperature dependence of the latch-up effects in a CMOS inverter based on 0.5 μm technology caused by high power microwave （HPM） is studied. The malfunction and power supply current characteristics are revealed and adopted as the latch-up criteria. The thermal effect is shown and analyzed in detail. CMOS in- verters operating at high ambient temperature are confirmed to be more susceptible to HPM, which is verified by experimental results from previous literature. Besides the dependence of the latch-up triggering power P on the ambient temperature T follows the power-law equation P = ATβ. Meanwhile, the ever reported latch-up delay time characteristic is interpreted to be affected by the temperature distribution. In addition, it is found that the power threshold increases with the decrease in pulse width but the degree of change with a certain pulse width is constant at different ambient temperatures. Also, the energy absorbed to cause latch-up at a certain temperature is basically sustained at a constant value.

关键词： complementary metal oxide semiconductor high power microwave latch-up thermal effect temper-ature dependence

20-Hydroxyecdysone Improves Neuronal Differentiation of Adult Hippocampal Neural Stem Cells in high power microwave Radiation-Exposed Rats

在线全文

学校读者我要写书评

暂无评论

Biomedical and Environmental Sciences 2022年第6期35卷 504-517页

作者： LIU Jing Jing ZHANG Hong Yan CHEN Xin ZHANG Guang Bin LIN Jiang Kai FENG Hua CHU Wei Hua Department of Neurosurgery and Key Laboratory of Neurotrauma Southwest HospitalThird Military Medical University(Army Medical University)Chongqing 400038China Department of Occupational Health Faculty of Preventive MedicineThird Military Medical University(Army Medical University)Chongqing 400038China

Objective The hippocampus is thought to be a vulnerable target of microwave *** aim of the present study was to investigate whether 20-hydroxyecdysone(20E)acted as a fate regulator of adult rat hippocampal neural stem cells(NSCs).Furthermore,we investigated if 20E attenuated high power microwave(HMP)radiation-induced learning and memory *** Sixty male Sprague-Dawley rats were randomly divided into three groups:normal controls,radiation treated,and radiation+20E *** in the radiation and radiation+20E treatment groups were exposed to HPM radiation from a microwave emission *** learning and memory abilities of the rats were assessed using the Morris water maze *** adult rat hippocampal NSCs were isolated in vitro and cultured to evaluate their proliferation and *** addition,hematoxylin&eosin staining,western blotting,and immunofluorescence were used to detect changes in the rat brain and the proliferation and differentiation of the adult rat hippocampal NSCs after HPM radiation *** The results showed that 20E induced neuronal differentiation of adult hippocampal NSCs from HPM radiation-exposed rats via the Wnt3a/β-catenin signaling pathway in ***,20E facilitated neurogenesis in the subgranular zone of the rat brain following HPM radiation *** of 20E attenuated learning and memory deficits in HPM radiation-exposed rats and frizzled-related protein(FRZB)reduced the 20E-induced nuclear translocation ofβ-catenin,while FRZB treatment also reversed 20E-induced neuronal differentiation of NSCs in *** These results suggested that 20E was a fate regulator of adult rat hippocampal NSCs,where it played a role in attenuating HPM radiation-induced learning and memory deficits.

关键词： high power microwave Hippocampus 20-hydroxyecdysone Learning and memory

Formation of reactive species via high power microwave induced DNA damage and promoted intrinsic pathway-mediated apoptosis in lung cancer cells:An in vitro investigation

在线全文

学校读者我要写书评

暂无评论

Fundamental Research 2024年第6期4卷 1542-1556页

作者： Juie Nahushkumar Rana Sohail Mumtaz Ihn Han Eun Ha Choi Department of Plasma Bio Display Kwangwoon UniversitySeoul 139701South Korea Plasma Bioscience Research Center(PBRC) Kwangwoon UniversitySeoul 139701South Korea Department of Electrical and Biological Physics Kwangwoon UniversitySeoul 139701South Korea

Lung cancer continues to be the second most common cancer diagnosed and the main cause of cancer-related death globally,which requires novel and effective treatment *** considering treatment options,non-small cell lung cancer(NSCLC)remained a challenge,seeking new therapeutic ***-power microwave(HPM)progressions have facilitated the advancement of new technologies as well as improvements to those al-ready in *** impact of HPM on NSCLC has not been investigated *** this work,we uncovered the effect of pulsed HPM on NSCLC(H460 and A549)for the first time and the most likely underlying *** NSCLC(H460 and A549)cells and lung normal MRC5 were exposed to HPM(15,30,45,and 60)pulses(2.1 mJ/pulse).After exposure,the effects were observed at 12,24,48,and 72 *** primarily increases the level of intracellular reactive species by a strong electric field of∼27 kV/cm,which altered NSCLC viability,mitochondrial activity,and death rates.A model for the production of intracellular reactive species by HPM was also *** is found to be affected by HPM through DNA damage(upregulation of ATR/ATM,Chk1/Chk2,and P53)and increased expression of apoptotic *** scavenger and CPTIO-inhibitor confirm that the reactive species are mainly accountable for cellular *** order to ensure suitability for real-world usage,the skin depth was calculated as 30 *** played a main role in inducing cellular effects,with NO species possibly play-ing a contributing *** findings clarify the cellular mechanisms underlying HPM-induced cell death,poten-tially advancing therapeutic approaches for treating NSCLC,and a useful first step for future investigations in this ***,this technique has the potential to serve as an adjunct to non-surgical methods in cancer therapy.

关键词： Non-small cell lung cancer high power microwave microwave DNA damage Reactive species Mitochondria dysfunction Skin depth

Changes in Rat Testicular Germ Cell Apoptosis after high power microwave Radiation

维普期刊数据库评论

在线全文

维普期刊数据库

学校读者我要写书评

暂无评论

Asian Journal of Andrology 2004年第3期6卷 248-248页

作者： Chun-HuaYu Yuan-QingYao Ying-Yang Dong-HongLi DepartmentofObstetricsandGynecology Tang-DuHospitalFourthMilitaryMedicalUniversityXi＇an710038China DepartmentofObstetricsandGynecology Tang-DuHospitalFourthMilitaryMedicalUniversityXi＇an710038China

Aim:To study the effect of high power microwave (HPM) radiation on the testicular germ cell apoptosis. Methods: One hundred and twenty-five Spraque-Dawley rats were randomly divided into two groups, the control group and the experimental group and the latter was further divided into four subgroups: 10 mW/cm2 5 min, 10 mW/cm210 min, 20 mw/cm2 5 min and 20 mW/cm210 min. The experimental groups were radiated with S wave band of 10 mW/ cm2,20 mW/cm2 high power microwave for 5 or 10 min. Testicular samples were taken at 6 h, 24 h, 48 h, 72 h and 5 d after radiation. The testicular germ cell apoptosis was detected by in situ terminal deoxynucleotityl transferase mediated dUTP nick end labeling (TUNEL). Results: The number of apoptotic cells of the 6 h, 24 h and 48 h experimental groups after 10 and 20 mW/cm2 radiation for 5 min was significantly larger than that of the controls (P0.05). Conclusion: HPM increases the germ cell apoptosis of rat testis, which is related to the time of radiation and sample acquisition. In the condition of the present test, 5 minutes of HPM radiation may significantly enhance testicular germ cell apoptosis and damage, which in turn may influence the reproductive function of the rats.

关键词： testis germ cell apoptosis high power microwave

Zinc-finger protein A20 protects hair cells from damage made by high-power microwave

在线全文

学校读者我要写书评

暂无评论

Journal of Bio-X Research 2019年第3期2卷 132-139页

作者： Feng Tang Xiaoling Chen Lifeng Jia Hai Li Jingya Li Wei Yuan Department of Otolaryngology The First Hospital Affiliated to the Third Military Medical University(Southwest Hospital)ChongqingChina

Inner ear hair cells are important for maintaining *** damage to hair cells is an important cause of sensorineural *** radiation,especially high-power microwave,is an important threat to human health in modern society and ***,it is not clear whether high-power microwave has an effect on cochlea hair *** study aimed to assess the effects of high-power microwave on cochlear hair cells in guinea pigs,and investigate the potential protection of these cells against high-power microwave-induced damage by recombinant adenovirus *** on experimental results,a 65 W/cm^(2) irradiation density applied to guinea pigs in this study to establish a high-power microwave inner ear injury *** addition,pAdEeay-1/A20 was injected via a round window into experimental guinea pig cochlea,whereas artificial perilymph was injected into the control *** function was assessed by testing the auditory brainstem response threshold,and damage to cochlear hair cells was investigated by cell counting and scanning electron microscopy observations of the basilar *** ear injury was observed 6 hours after 65 W/cm^( 2 ) of irradiation and the auditory brainstem response threshold was significantly higher in the irradiation group(Phigh-power microwave can cause damage to cochlear hair cells,as well as hearing loss with prolonged exposure and/or high *** this regard,65 W/cm^( 2 ) of irradiation

关键词： cochlea zinc finger protein A20 high power microwave inner hair cells outer hair cells inner ear adenovirus microwave irradiation

Switching speed effect of phase shift keying in SLED for generating high power microwaves

在线全文

学校读者我要写书评

暂无评论

Chinese Physics C 2016年第1期40卷 134-138页

作者：熊正锋程诚于鉴陈怀璧宁辉 Department of Engineering Physics Tsinghua University Laboratory on Science and Technology of high power microwave Northwest Institute of Nuclear Technology

SLAC energy doubler （SLED） type radio-frequency pulse compressors are widely used in large-scale particle accelerators for converting long-duration moderate-power input pulses into short-duration high-power output pulses. Phase shift keying （PSK） is one of the key components in SLED pulse compression systems. Performance of the PSK will influence the output characteristics of the SLED, such as the rise-time of the output pulse, maximal peak power gain, and energy efficiency. In this paper, a high power microwave source based on power combining and pulse compression of conventional klystrons is introduced. The effects of nonideal PSK with slow switching speed and PSK without power output during the switching process are investigated, and the experimental results with nonideal PSK agree well with the analytical results.

关键词： SLED RF pulse compressor phase shift keying high power microwave

Magnetically insulated transmission line oscillator oscillated in a modified HEM_(11) mode

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2009年第10期18卷 4281-4286页

作者：王冬陈代兵秦奋范植开 Institute of Applied Electronics China Academy of Engineering Physics

This paper puts forward a novel magnetically insulated transmission line oscillator （MILO） for the first time which takes a modified HEM11 mode as its main interaction mode. The excitation of the oscillation mode is made possible by carefully adjusting the arrangements of each resonant cavity in a two-dimensional （2-D） slow wave structure. The high frequency characteristics are analyzed and a PIC simulation is carried out; the detailed results are discussed to get a better understanding of this new MILO. Employing an electron beam of about 441 kV and 39.7 kA, it finds that the modified HEM11 mode MILO generates a high power microwave output of about 1.47 GW at 1.45 GHz. The power conversion efficiency is about 8.4% and the generated microwave is in a TEll-like circularly polarized mode; its polarization direction is decided by the rotation direction of the SWS.

关键词： high power microwave magnetically insulated transmission line oscillator asymmetricmode HEM11 mode circularly polarized mode

C band microwave damage characteristics of pseudomorphic high electron mobility transistor

在线全文

学校读者我要写书评

暂无评论

Chinese Physics B 2021年第9期30卷 599-605页

作者： Qi-Wei Li Jing Sun Fu-Xing Li Chang-Chun Chai Jun Ding Jin-Yong Fang School of Electronics and Information Northwestern Polytechnical UniversityXi'an 710129China China Academy of Space Technology(Xi'an) Xi'an 710100China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China

The damage effect characteristics of GaAs pseudomorphic high electron mobility transistor(pHEMT)under the irradiation of C band high-power microwave(HPM)is investigated in this *** on the theoretical analysis,the thermoelectric coupling model is established,and the key damage parameters of the device under typical pulse conditions are predicted,including the damage location,damage power,*** the injection effect test and device microanatomy analysis through using scanning electron microscope(SEM)and energy dispersive spectrometer(EDS),it is concluded that the gate metal in the first stage of the device is the vulnerable to HPM damage,especially the side below the gate near the *** damage power in the injection test is about 40 dBm and in good agreement with the simulation *** work has a certain reference value for microwave damage assessment of pHEMT.

关键词： high power microwave pseudomorphic high electron mobility transistor damage mechanism C band low noise amplifier(LNA)