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Design of a combined magnetic negative stiffness mechanism with high linearity in a wide working region

Science China(Technological Sciences) 2022年第9期65卷 2127-2142页

作者： WU JiuLin CHE JiXing CHEN XueDong JIANG Wei State Key Laboratory of Digital Manufacturing Equipment and Technology Huazhong University of Science and TechnologyWuhan 430074China

Combining magnetic negative stiffness mechanism(NSM) in parallel with positive stiffness has been considered to be an effective approach to realize the quasi-zero stiffness(QZS) characteristic,thus resolving the contradiction between high load capacity and(ultra-) low-frequency vibration isolation capability.However,the remarkable stiffness nonlinearity of common magnetic NSMs restricts the displacement region with reliable negative stiffness,resulting in considerable nonlinear behavior,poor vibration attenuation performance,and probable instability under large amplitude vibrations.A novel combined negative stiffness mechanism(CNSM) with attractive magnetic NSM(ANSM) and repulsive magnetic NSM(RNSM) in parallel is proposed in this paper.The stiffness nonlinearities of the ANSM and RNSM in the CNSM are counteracted through the parallel configuration such that the displacement region with reliable linear stiffness of the CNSM is widened by several times.An analytical model of the CNSM is established by the magnetic charge model and verified by simulation on ANSYS Maxwell.Parametric studies are then conducted to investigate the effects of design parameters on the stiffness characteristic,providing guidelines for the optimal design of the CNSM.Meanwhile,the stiffness and nonlinearity of the CNSM are compared with that of a single ANSM and RNSM.Static and dynamic experiments are finally conducted on the proposed test prototypes.Experimental results demonstrated the validity of the established model and the effectiveness of the CNSM in generating high linear stiffness within a wide displacement region and lowering the resonance frequency.Thus,the proposed CNSM can be applied in(ultra-) low-frequency vibration isolation under large amplitude excitations.

关键词： vibration isolation quasi-zero stiffness combined negative stiffness mechanism high linearity

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high linearity current communicating passive mixer employing a simple resistor bias

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Journal of Semiconductors 2013年第3期34卷 86-89页

作者：刘荣江郭桂良阎跃鹏 Department of Electronics System Technology Institute of MicroelectronicsChinese Academy of Sciences

A high linearity current communicating passive mixer including the mixing cell and transimpedance amplifier(TIA) is introduced.It employs the resistor in the TIA to reduce the source voltage and the gate voltage of the mixing cell.The optimum linearity and the maximum symmetric switching operation are obtained at the same time.The mixer is implemented in a 0.25μm CMOS process.The test shows that it achieves an input third-order intercept point of 13.32 dBm,conversion gain of 5.52 dB,and a single sideband noise figure of 20 dB.

关键词： RFIC passive mixer high linearity current communicating CMOS process

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A 50 MHz-1 GHz high linearity CATV amplifier with a 0.15μm InGaAs PHEMT process

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Journal of Semiconductors 2011年第7期32卷 70-73页

作者：徐建王志功张瑛黄晶 Institute of RF-& OE-ICs Southeast University

A 50 MHz-1 GHz low noise and high linearity amplifier monolithic-microwave integrated-circuit （MMIC） for cable TV is presented.A shunt AC voltage negative feedback combined with source current negative feedback is adopted to extend the bandwidth and linearity.A novel DC bias feedback is introduced to stabilize the operation point,which improved the linearity further.The circuit was fabricated with a 0.15μm InGaAs PHEMT （pseudomorphic high electron mobility transistor） process.The test was carried out in 75Ωsystems from 50 MHz to 1 GHz.The measurement results showed that it gave a small signal gain of 16.5 dB with little gain ripples of less than±1dB.An excellent noise figure of 1.7-2.9 dB is obtained in the designed band.The IIP3 is 16 dBm, which shows very good linearity.The CSO and CTB are high up to 68 dBc and 77 dBc,respectively.The chip area is 0.56 mm^2 and the power dissipation is 110 mA with a 5 V supply.It is ideally suited to cable TV systems.

关键词： low noise high linearity MMIC InGaAs PHEMT process CATV amplifier

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A high linearity multi-band and gain adjustable channel-select filter for TV-tuner application

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Journal of Semiconductors 2013年第9期34卷 128-135页

作者：王心程涛刘杰唐长文 ASIC & System State Key Laboratory Fudan University

This paper presents a channel-select filter that employs an active-RC bi-quad structure for TV-tuner application. A design method to optimize the IIP3 of the bi-quad is developed. Multi-band selection and gain adjustment are implemented using switching resistors in the resistor array and capacitors in the capacitor array. Q-factor degradation is compensated by a tuning segmented resistor. A feed-forward OTA with high gain and low third-order distortion is applied in the bi-quad to maximize linearity performance and minimize area by avoiding extra compensation capacitor use. An RC tuning circuit and DC offset cancellation circuit are designed to overcome the process variation and DC offset, respectively. The experimental results yield an in-band IIP3 of more than 31 dBm at 0 dB gain, a 54 dB gain range with 6 dB gain step, and a continuous frequency tuning range from 0.25 to 4 MHz. The in-band ripple is less than 1.4 dB at high gain mode, while the gain error and frequency tuning error are no more than 3.4% and 5%, respectively. The design, which is fabricated in a 0.18 μm CMOS process, consumes 12.6 mW power at a 1.8 V supply and occupies 1.28 mm2.

关键词： channel select filter high linearity gain adjustable multi-band TV tuner

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A high linearity SiGe HBT LNA for GPS receiver

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Journal of Semiconductors 2014年第4期35卷 92-97页

作者：罗彦彬石坚马成炎甘业兵钱敏 Institute of Microelectronics Chinese Academy of Sciences Hangzhou Zhongke Microelectronics Co.Ltd. Jiaxing Lianxing Microelectronics Co.Ltd.

A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB compression point of ＋7.8 dBm and an input third-order intercept point of ＋1.8 dBm. The chip occupies a 500 × 560μm^2 area and consumes 3.6 mA from a 2.85 V power supply.

关键词： LNA noise figure high linearity OPldB IIP3 SiGe HBT

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A high-linearity InGaP/GaAs HBT power amplifier for IEEE 802.11a/n

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Journal of Semiconductors 2013年第6期34卷 91-96页

作者：崔杰陈磊康春雷史佳张旭光艾宝丽刘轶 Micro-Nano Device Research Center Shanghai Advanced Research InstituteChinese Academy of Sciences Graduate University of the Chinese Academy of Sciences

A three-stage 4.8-6 GHz monolithic power amplifier（PA） compatible with IEEE 802.11a/n designed based on an advanced 2μm InGaP/GaAs hetero-junction bipolar transistor（HBT） process is presented.The PA integrates input matching and closed-loop power control circuits on chip.Under 3.3 V DC bias,the amplifier achieves a ~31 dB small signal gain,excellent wide band input and output matching among overall 1.2 GHz bandwidth,and up to 24.5 dBm linear output power below EVM 3%with IEEE 802.11a 64QAM OFDM input signal.

关键词： error vector magnitude（EVM） high power amplifier（HPA） high linearity InGaP/GaAs HBT wideband

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A high linearity current mode multiplier/divider with a wide dynamic range

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Journal of Semiconductors 2012年第12期33卷 62-65页

作者：廖鹏飞罗萍张波李肇基 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

A high linearity current mode multiplier/divider （CMM/D） with a wide dynamic range is presented. The proposed CMM/D is based on the voltage-current characteristic of the diode, thus wide dynamic range is achieved. In addition, high linearity is achieved because high accuracy current mirrors are adopted and the output current is insensitive to the temperature and device parameters of the fabrication process. Furthermore, no extra bias current for all input signals is required and thus power saving is realized. With proper selection of establishing the input terminal, the proposed circuit can perform as a mulfifunction circuit to he operated as a multiplier/divider, without changing its topology. The proposed circuit is implemented in a 0.25μm BCD process and the chip area is 0.26 ~ 0.24 mm2. The simulation and measurement results show that the maximum static linearity error is 4-1.8% and the total harmonic distortion is 0.4% while the input current ranges from 0 to 200 μA.

关键词： high linearity current mode multiplier/divider static linearity THD

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A wideband large dynamic range and high linearity RF front-end for U-band mobile DTV

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Journal of Semiconductors 2013年第10期34卷 97-101页

作者：刘荣江刘生有郭桂良程序阎跃鹏 Department of Electronics System Technology Institute of MicroelectronicsChinese Academy of Sciences

A wideband large dynamic range and high linearity U-band RF front-end for mobile DTV is introduced, and includes a noise-cancelling low-noise amplifier （LNA）, an RF programmable gain amplifier （RFPGA） and a current communicating passive mixer. The noise/distortion cancelling structure and RC post-distortion compensation are employed to improve the linearity of the LNA. An RFPGA with five stages provides large dynamic range and fine gain resolution. A simple resistor voltage network in the passive mixer decreases the gate bias voltage of the mixing transistor, and optimum linearity and symmetrical mixing is obtained at the same time. The RF front-end is implemented in a 0.25 #m CMOS process. Tests show that it achieves an IIP3 （third-order intercept point） of -17 dBm, a conversion gain of 39 dB, and a noise figure of 5.8 dB. The RFPGA achieves a dynamic range of-36.2 to 23.5 dB with a resolution of 0.32 dB.

关键词： RF front-end high linearity dynamic range LNA RF programmable gain amplifier current communicating passive mixer

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A novel low-noise high-linearity CMOS transmitter for mobile UHF RFID reader

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Science China(Information Sciences) 2014年第8期57卷 187-194页

作者： LIU Shan WANG XinAn SHEN JinPeng WANG Bo YE Tao HUANG Ru Key Laboratory of Integrated Microsystems Peking University Shenzhen Graduate School

A novel CMOS transmitter with low TX noise and high linearity is implemented in a 0.18μm 1P6M standard CMOS process for Mobile UHF RFID reader.Adopting double-sideband amplitude-shift-keying(DSBASK)as the only modulation is supported,this transmitter has very low power consumption.A novel analog baseband circuit is proposed to reduce the transmitter noise.With a G′′m–cancellation technology,a highly linear up-conversion active mixer and a power amplifier driver are designed.The transmitter has a measured output1 dB compression point of 13.4 dBm.Occupying a silicon area of about 1 mm2and consuming 144 mW from a1.8 V voltage supply,the transmitter makes the Mobile UHF RFID reader communicate with a transponder in a distance of 1 m conveniently.

关键词： transmitter mobile UHF RFID reader low noise high linearity analog baseband

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A Mobile UHF RFID Reader with high linearity Receiver

A Mobile UHF RFID Reader with High Linearity Receiver

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2009 IEEE 8th International Conference on ASIC(ASICON 2009)

作者： Xiaoxing Feng Xin’an Wang* Xing Zhang Binjie Ge Shan Liu Jinpeng Shen Jinsi Zhong and Yuan Liu

A Mobile UHF RFID Reader made up of RF frontend,phase lock loop,analog baseband and digital baseband is designed and implemented in a 0.8um CMOS process.A RX configuration without LNA is adopted in this design for high linearity purpose.The 1dB input compression point is over 2dBm and input return loss is better than-10dB from 840MHz to 930MHz.A novel servo loop based DC offset cancellation scheme is realized without off-chip component.The reader consumes a power of 420mW with 20dBm power output.The sensitivity reaches to-71dBm.The whole chip occupies 3mmX3.7mm in 0.8um CMOS process.

关键词： Radio-Frequency RFID UHF high linearity reader transponder mobile tag

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