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Nano Research 2018年第12期11卷 6227-6236页

作者： Chunxiao Cong Chenji Zou Bingchen Cao Lishu Wu Jingzhi Shahg Haomin Wang Zhijun Qiu Laigui Hu Pengfei Tian Ran Liu Ting Yu State Key Laboratory of ASIC and System School of Information Science and TechnologyFudan UniversityShanghai 200433China Division of Physics and Applied Physics School of Physical and Mathematical SciencesNanyang Technological UniversitySingapore 637371Singapore State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences865Changning RoadShanghai200050China

Two-dimensional (2D) semiconductors, represented by 2D transition metal dichalcogenides (TMDs), exhibit rich valley physics due to strong spin-orbit/spin-valley coupling. The most common way to probe such 2D systems is to utilize optical methods, which can monitor light emissions from various excitonic states and further help in understanding the physics behind such phenomena. Therefore, 2D TMDs with good optical quality are in great demand. Here, we report a method to directly grow epitaxial WS2 and MoS2 monolayers on hexagonal boron nitride (hBN) flakes with a high yield and high optical quality; these monolayers show better intrinsic light emission features than exfoliated monolayers from natural crystals. For the first time, the valley Zeeman splitting of WS2 and MoS2 monolayers on hBN has been visualized and systematically investigated. This study paves a new way to produce high optical quality WS2 and MoS2 monolayers and to exploit their intrinsic properties in a multitude of applications.

关键词： transition metal dichalcogenides intrinsic excitonic emission valley Zeeman splitting hexagonal boron nitride chemical vapor deposition

Van der Waals heterostructure of phosphorene and hexagonal boron nitride: First-principles modeling

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Chinese Physics B 2016年第3期25卷 342-346页

作者：张鹏王静段香梅 Department of Physics Faculty of Science Ningbo University

We have studied the structural and electronic properties of a hybrid hexagonal boron nitride with phosphorene nanocomposite using ab initio density functional calculations. It is found that the interaction between the hexagonal boron nitride and phosphorene is dominated by the weak van der Waals interaction, with their own intrinsic electronic properties preserved. Furthermore, the band gap of the nanocomposite is dependent on the interfacial distance. Our results could shed light on the design of new devices based on van der Waals heterostructure.

关键词： density functional theory hexagonal boron nitride nanocomposite phosphorene

Engineering of single-photon emitters in hexagonal boron nitride[Invited]

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Chinese Optics Letters 2022年第3期20卷 117-136页

作者：黄逸婧党郅博何霄方哲宇 School of Physics State Key Laboratory for Mesoscopic PhysicsAcademy for Advanced Interdisciplinary StudiesCollaborative Innovation Center of Quantum Matterand Nano-optoelectronics Frontier Center of Ministry of EducationPeking UniversityBeijing 100871China

Quantum information technology requires bright and stable single-photon emitters(SPEs).As a promising single-photon source,SPEs in layered hexagonal boron nitride(hBN)have attracted much attention recently for their high brightness and excellent optical stability at room temperature.In this review,the physical mechanisms and the recent progress of the quantum emission of hBN are reviewed,and the various techniques to fabricate high-quality SPEs in hBN are summarized.The latest development and applications based on SPEs in hBN in emerging areas are discussed.This review focuses on the modulation of SPEs in hBN and discusses possible research directions for future device applications.

关键词： quantum emission single-photon emitter hexagonal boron nitride two-dimensional materials quantum nanophotonics

High-Throughput Growth of hexagonal boron nitride Film Using Porous-Structure Isolation Layer

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Journal of Materials Science and Chemical Engineering 2023年第3期11卷 45-51页

作者： Ruitao Jia Fangzhu Qing Xuesong Li School of Integrated Circuit Science and Engineering (Exemplary School of Microelectronics) University of Electronic Science and Technology of China Chengdu China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Shenzhen China

Chemical vapor deposition is considered as the most hopeful method for the synthesis of large-area high-quality hexagonal boron nitride on the substrate of catalytic metal. However, the size the hexagonal boron nitride films are limited to the size of growth chamber, which indicates a lower production efficiency. In this paper, the utilization efficiency of growth chamber is highly improved by alternately stacking multiple pieces of Cu foils and carbon fiber surface felt with porous structure. Uniform and continuous hexagonal boron nitride films are prepared on Cu foils through chemical vapor deposition utilizing ammonia borane as the precursor. This work develops a simple and practicable method for high-throughput preparation of hexagonal boron nitride films, which could contribute to the industrial application of hexagonal boron nitride. .

关键词： hexagonal boron nitride Chemical Vapor Deposition Porous Structure Isolation Layer High Throughput

Effects of BN on the Mechanical and Thermal Properties of PP/BN Composites

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Journal of Wuhan University of Technology(Materials Science) 2024年第2期39卷 345-352页

作者：陈厚振王艳芝 NAN Yu WANG Xu YUE Xianyang ZHANG Yifei FAN Huiling School of Textiles Zhongyuan University of TechnologyZhengzhou 451191China Kaifeng Power Supply Company State Grid Henan Electric Power CompanyKaifeng 475000China School of Materials Science and Engineering Zhejiang University of TechnologyHangzhou 310014China Zhengzhou Hengtian Copper Co. Ltd.Zhengzhou 451100China

In order to explore the thermal conductivity of polypropylene(PP)/hexagonal boron nitride(BN) composites,PP composites filled with different proportions of BN were prepared through extrution compounding,injection moulding and compression moulding.The composites were filled with BN particles of 5 and 20 μm respectively,and their mass fractions in composites were considered.Percentage of BN was varied from 0 to 25wt% in steps of 5wt%.The effects of BN filler on mechanical properties of the composites were evaluated.The thermal behaviors were studied using DSC and TGA,and the thermal conductivity was also investigated by Laser Flash Device and the Model of 3D Heat Conduction respectively.The experimental results show that impact strength of PP/BN can be enhanced with the addition of BN,but that composites exhibit lower breaking elongation & tensile strength when compared to unfilled ones.It is found that mass fraction of BN influenced the final thermal stability and degree of crystallization of PP matrix,the degree of crystallization of PP with 15wt% of 20 μm BN can be improved by 25% than neat PP.Meanwhile,crystallization temperatures of PP composites are elevated by about 10 ℃.The thermal conductivity results demonstrate that the maximum value of the thermal conductivity is achieved from PP/BN with 20wt% of 20 μm BN,higher than that of pure PP by 95.65%,close to the simulation one.

关键词： thermal properties polypropylene composites hexagonal boron nitride

Direct growth of hexagonal boron nitride films on dielectric sapphire substrates by pulsed laser deposition for optoelectronic applications

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Fundamental Research 2021年第6期1卷 677-683页

作者： Gaokai Wang Jingren Chen Junhua Meng Zhigang Yin Ji Jiang Yan Tian Jingzhen Li Jinliang Wu Peng Jin Xingwang Zhang Key Lab of Semiconductor Materials Science Institute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Faculty of Science Beijing University of TechnologyBeijing 100124China

Recently,hexagonal boron nitride(h-BN),an ultra-wide bandgap semiconductor,has attracted considerable atten-tion owing to its excellent properties.In thin films grown on metal catalysts,contamination and damage induced by a transfer process cannot be avoided.Therefore,synthesizing h-BN films on non-catalytic dielectric substrates is desirable for electronic applications.In this study,we demonstrate the direct growth of high-quality h-BN films with a controllable thickness on sapphire substrates by using the pulsed laser deposition(PLD)technique.The effects of the deposition conditions and laser parameters on the growth of the h-BN films are systematically investigated by evaluating their characteristic Raman peaks.Among the various growth parameters studied,the substrate temperature has the greatest influence on the crystalline quality of the h-BN films,and the optimal pres-sure varies depending on the target-substrate distance.The h-BN film grown under optimal conditions exhibits a narrow Raman line width of∼30 cm^(−1),indicating a high crystalline quality.The photodetectors fabricated from the PLD-grown h-BN films exhibit superior deep-ultraviolet detection performance with a large on/offratio of>104,high photoresponsivity,and a sharp cut-offwavelength of 220 nm.This study presents the possibility of producing high-quality h-BN films by applying PLD on dielectric substrates for optoelectronic applications.

关键词： hexagonal boron nitride Pulsed laser deposition Raman spectroscopy Photodetectors

Replacement of Flake Graphite in Aluminacarbon Refractories by hexagonal boron nitride

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China's Refractories 2014年第4期23卷 36-40页

作者： LIANG Feng XUE Zhengliang ZHAO Lei FANG Wei YE Linfeng LEI Zhongxing The State Key Laboratory of Refractories and Metallurgy Wuhan University of Science and Technology Wuhan Iron and Steel(Group) Refractory Materials Co. Ltd.

Three kinds of composite alumina refractories were prepared with tabular alumina （3-1 and 1-0 mm） as aggregates,tabular alumina powder,α-Al2 O3 micropowder,and Si powder as matrix,adding 3 mass％ hexagonal boron nitride （h-BN）,3 mass％ flake graphite and 10 mass％ flake graphite,respectively.Cold physical properties,hot modulus of rupture,oxidation resistance,thermal shock resistance and slag corrosion resistance of the specimens were compared.The results show that：（1） physical properties and hot modulus of rupture of Al2 O3-h-BN refractories are slightly different from those of low carbon Al2 O3-C refractories,but better than those of traditional Al2 O3-C refractories with 10 mass％ graphite ; （2） Al2 O3-h-BN refractories have better thermal shock resistance and oxidation resistance than the carbon containing refractories,while similar slag resistance with low carbon Al2 O3-C refractories ; （3） h-BN can replace flake graphite as a starting material for the preparation of composite alumina refractories,considering the overall properties of the material.

关键词： hexagonal boron nitride alumina-hexagonal boron nitride refractories alumina-carbon refractories flake graphite oxidation resistance

Global Impact and Balancing Act:Deciphering the Effect of Fluorination on B 1s Binding Energies in Fluorinated h‑BN Nanosheets

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Precision Chemistry

Precision Chemistry 2024年第6期2卷 239-244页

作者： Yang Xiao Jun-Rong Zhang Sheng-Yu Wang Weijie Hua MIIT Key Laboratory of Semiconductor Microstructure and Quantum Sensing Department of Applied PhysicsSchool of PhysicsNanjing University of Science and Technology210094 NanjingChina

X-ray photoelectron spectroscopy(XPS)is an important characterization tool in the pursuit of controllable fluorination of two-dimensional hexagonal boron nitride(h-BN).However,there is a lack of clear spectral interpretation,and seemingly conflicting measurements exist.To discern the structure−spectroscopy relation,we performed a comprehensive first-principles study on the boron 1s edge XPS of fluorinated h-BN(F-BN)nanosheets.By gradually introducing 1−6 fluorine atoms into different boron or nitrogen sites,we created various F-BN structures with doping ratios ranging from 1 to 6%.Our calculations reveal that fluorines landed at boron or nitrogen sites exert competitive effects on the B 1s binding energies(BEs),leading to red or blue shifts in different measurements.Our calculations affirmed the hypothesis that fluorination affects 1s BEs of all borons in theπ-conjugated system,opposing the transferability from h-BN to F-BN.Additionally,we observe that BE generally increases with higher fluorine concentration when both borons and nitrogens are nonexclusively fluorinated.These findings provide critical insights into how fluorination affects boron’s 1s BEs,contributing to a better understanding of fluorination functionalization processes in h-BN and its potential applications in materials science.

关键词： X-ray photoelectron spectroscopy Core-electron binding energy Fluorination hexagonal boron nitride Cluster-periodic method Born-Oppenheimer molecular dynamics

Growth of Noncentrosymmetric Two-Dimensional Single Crystals

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Precision Chemistry

Precision Chemistry 2024年第7期2卷 330-354页

作者： Guoliang Cui Jiajie Qi Zhihua Liang Fankai Zeng Xiaowen Zhang Xiaozhi Xu Kaihui Liu Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum MaterialsSchool of PhysicsSouth China Normal UniversityGuangzhou 510631China Guangdong−Hong Kong Joint Laboratory of Quantum Matter Frontier Research Institute for PhysicsSouth China Normal UniversityGuangzhou 510631China State Key Laboratory for Mesoscopic Physics Frontiers Science Center for Nano-optoelectronicsSchool of PhysicsPeking UniversityBeijing 100871China Songshan Lake Materials Laboratory Institute of PhysicsChinese Academy of SciencesDongguan 523820China

Among the various two-dimensional(2D)materials,more than 99%of them are noncentrosymmetric.However,since the commonly used substrates are generally centrosymmetric,antiparallel islands are usually inevitable in the growth of noncentrosymmetric 2D materials because of the energetic equivalency of these two kinds of antiparallel islands on centrosymmetric substrates.Therefore,achieving the growth of noncentrosymmetric 2D single crystals has long been a great challenge compared with the centrosymmetric ones like graphene.In this review,we presented the remarkable efforts and progress in the past decade,through precise chemical processes.We first discussed the great challenge and possible strategies in the growth of noncentrosymmetric 2D single crystals.Then,we focused on the advancements made in producing representative noncentrosymmetric 2D single crystals,including hexagonal boron nitride(hBN),transition metal dichalcogenides(TMDs),and other noncentrosymmetric 2D materials.At last,we summarized and looked forward to future research on the growth of layer-,stacking-,and twist-controlled noncentrosymmetric 2D single crystals and their heterostructures.

关键词： noncentrosymmetric two-dimensional materials single crystals hexagonal boron nitride transition metal dichalcogenides

Anomalous enhancement oxidation of few-layer MoS_(2)and MoS_(2)/h-BN heterostructure

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Nano Research 2022年第8期15卷 7081-7090页

作者： Siming Ren Yanbin Shi Chaozhi Zhang Mingjun Cui Jibin Pu Key Laboratory of Marine Materials and Related Technologies Zhejiang Key Laboratory of Marine Materials and Protective TechnologiesNingbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China Key Laboratory of Impact and Safety Engineering Ministry of Education of ChinaSchool of Mechanical Engineering and MechanicsNingbo UniversityNingbo 315211China

Because of profound applications of two-dimensional molybdenum disulfide(MoS_(2))and its heterostructures in electronics,its thermal stability has been spurred substantial interest.We employ a precision muffle furnace at a series of increasing temperatures up to 340℃to study the oxidation behavior of continuous MoS_(2)films by either directly growing mono-and fewlayer MoS_(2)on SiO_(2)/Si substrate,or by mechanically transferring monolayer MoS_(2)or hexagonal boron nitride(h-BN)onto monolayer MoS_(2)substrate.Results show that monolayer MoS_(2)can withstand high temperature at 340℃with less oxidation while the few-layer MoS_(2)films are completely oxidized just at 280℃,resulting from the growth-induced tensile strain in few-layer MoS_(2).When the tensile strain of films is released by transfer method,the stacked few-layer MoS_(2)films exhibit superior thermal stability and typical layer-by-layer oxidation behavior at similarly high temperature.Counterintuitively,for the MoS_(2)/h-BN heterostructure,the h-BN film itself stacked on top is not damaged and forms many bubbles at 340℃,whereas the underlying monolayer MoS_(2)film is oxidized completely.By comprehensively using various experimental characterization and molecular dynamics calculations,such anomalous oxidation behavior of MoS_(2)/h-BN heterostructure is mainly due to the increased tensile strain in MoS_(2)film at elevated temperature.

关键词： molybdenum disulfide hexagonal boron nitride heterostructure enhancement oxidation tensile strain