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Modeling and Simulation of heterojunction solar cell with Mono Crystalline Silicon

Journal of Applied Mathematics and Physics 2024年第3期12卷 997-1020页

作者： Sajid Ullah Ayesha Gulnaz Guangwei Wang School of Electronic Engineering Tianjin University of Technology and Education Tianjin China Department of Physics Rihah International University Islamabad Pakistan

The monocrystalline silicon is a promising material that could be used in solar cells that convert light into electricity. Although the cost of ordinary silicon (Si) solar cells has decreased significantly over the past two decades, the conversion efficiency of these cells has remained relatively high. While solar cells have a great potential as a device of renewable energy, the high cost they incur per Watt continues to be a significant barrier to their widespread implementation. As a consequence, it is vital to conduct research into alternate materials that may be used in the construction of solar cells. The heterojunction solar cell (HJSC), which is based on n-type zinc oxide (n-ZnO) and p-type silicon (p-Si), is one of the numerous alternatives of the typical Si single homojunction solar cell. There are many deficiencies that can be found in the published research on n-ZnO/p-Si heterojunction solar cell. Inconsistencies in the stated value of open circuit voltage (Voc) of the solar cell are one example of deficiency. The absence of a full theoretical study to evaluate the potential of the solar cell structure is another deficiency that can be found in these researches. A lower value of experimentally obtained VOC in comparison to the theoretical prediction based on the band-gap between n-ZnO and p-Si. There needs to be more consensus among scientists regarding the optimal conditions for the growth of zinc oxide. Many software’s are available for simulating and optimizing the solar cells based on these parameters. For this purpose, in this dissertation, I provide computational results relevant to n-ZnO/p-Si HJSC to overcome deficiencies that have been identified. While modeling and simulating the potential of the solar cell structure with AFORS-HET, it is essential to consider the constraints that exist in the real world. AFORS-HET was explicitly designed to mimic the multilayer solar cell arrangement. In AFORS-HET, we can add up to seven la

关键词： heterojunction solar cell Silicon Monocrystalline Deficiencies AFORS-HET Optimization Open Circuit Voltage Quantum Efficiency

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Fabrication and characterization of amorphous ITO/p-Si heterojunction solar cell

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Science China(Technological Sciences) 2013年第8期56卷 1870-1876页

作者： HE Bo WANG HongZhi LI YaoGang MA ZhongQuan XU Jing ZHANG QingHong WANG ChunRui XING HuaiZhong ZHAO Lei WANG DunDong Department of Applied Physics and State Key Laboratory for Modification of Chemical Fibers and Polymer Materials Donghua University Department of Physics Shanghai University Instrumental Analysis and Research Center Shanghai University

Amorphous indium-tin-oxide(a-ITO) film was deposited by radio-frequency(RF) magnetron sputtering at 180°C substrate temperature on the texturized p-Si wafer to fabricate a-ITO/p-Si heterojunction solar *** microstructural,optical and electrical properties of the a-ITO film were characterized by XRD,SEM,XPS,UV-VIS spectrophotometer,four-point probe and Hall effect measurement,*** electrical properties of heterojunction were investigated by I-V measurement,which reveals that the heterojunction shows strong rectifying behavior under a dark *** ideality factor and the saturation current density of this diode are 2.26 and 1.58×10-4 A cm-2,*** the value of IF/IR(IF and IR stand for forward and reverse currents,respectively) at 1 V is found to be as high as *** the a-ITO/p-Si heterojunction solar cell,the a-ITO thin film acts not only as an emitter layer,but also as an anti-reflected coating *** conversion efficiency of the fabricated a-ITO/p-Si heterojunction cell is approximately 1.1%,under 100 mW cm-2 illumination(AM1.5 condition).And the open-circuit voltage(Voc),short-circuit current density(J SC),filll factor(FF) are 280 mV,9.83 mA cm 2 and 39.9%,*** the ITO film deposited at low temperature is amorphous,it can effectively reduce the interface states between ITO and *** barrier height and internal electric field,which is near the surface of p-Si,can effectively be *** we can see the great photovoltaic effect.

关键词： amorphous indium-tin-oxide(a-ITO) film radio-frequency(RF) magnetron sputtering heterojunction solar cell current-voltage(I-V) characteristics

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Characteristics of Polyaniline/Si heterojunction solar cell By Electrochemical Dye Sensitization

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Semiconductor Photonics and Technology 2005年第4期11卷 248-252,258页

作者： ZHENG Jian-bang REN Ju HOU Chao-qi School of Science Northwestern Polytechnical University Xi＇an 710072 CHN

Using the electrochemical polymerization dye sensitization(ECDS) method, polyaniline(PAn), which is used as top region material in solar cells, is sensitized with direct blue dye(DS), and sensitized Al grid/DS-PAn/n-Si/Al heterojunction solar cells is prepared by ECDS. Influences of the ECDS on the absorption spectrum and the junction characteristics of the solar cell were discussed, and the output characteristics were measured. The results show that the absorption spectrum of the sensitized PAn films is much wider and stronger in Vis-range; the diode quality factor is about 6.3 and the height of latent barrier potential of p-n junction is 0.89eV; the short-circuit current and the conversion efficiency of sensitized DS-PAn/Si heterojunction solar cells are greatly improved, which the short-circuit current can increase 6 times, the fill factor is 57% and the efficiency can reach 1.42% under the illumination of 37.2W/m^2, respectively.

关键词： Polyaniline Electrochemical dye sensitization heterojunction solar cell

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Nc-Si Thin Film Deposited at Low Temperature and Nc-Si heterojunction solar cell

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Journal of Shanghai Jiaotong university(Science) 2004年第4期9卷 81-84页

作者：赵占霞崔容强孟凡英于化丛周之斌 Dept. of Physics Solar Energy Inst. Shanghai Jiaotong Univ. Shanghai 200240 China

This paper reported some results about intrinsic nanocrystalline silicon thin films deposited by high frequency (HF) sputtering on p-type c-Si substrates at low temperature. Samples were examined by atomic force microscopy (AFM), X-ray diffraction (XRD), infrared absorption, and ellipsometry. XRD measurements show that this film has a new microstructure, which is different from the films deposited by other methods. The ellipsometry result gives that the optical band gap of the film is about 2.63 eV. In addition, the n-type nc-Si∶H/p-type c-Si heterojunction solar cell, which has open circuit voltage (U oc ) of 558 mV and short circuit current intensity (I sc ) of 29 mA/cm2, was obtained based on the nanocrystalline silicon thin film. Irradiated under AM1.5, 100 mW/cm2 light intensity, the U oc , I sc , and FF can keep stable for 10 h.

关键词： HF sputtering low temperature nanocrystalline silicon heterojunction solar cell

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Plasma enhanced chemical vapor deposition of excellent a-Si：H passivation layers for a-Si：H/c-Si heterojunction solar cells at high pressure and high power

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Frontiers in Energy 2017年第1期11卷 85-91页

作者： Lei ZHAO Wenbin ZHANG Jingwei CHEN Hongwei DIAO Qi WANG Wenjing WANG Key Laboratory of solar Thermal Energy and Photovoltaic System of Chinese Academy of Sciences Institute of Electrical Engineering Chinese Academy of Sciences Beijing 100190 China University of Chinese Academy of Sciences Beijing 100049 China GCL System Integration Technology Co. Ltd Shanghai 201406 China

The intrinsic a-Si：H passivation layer inserted between the doped a-Si：H layer and the c-Si substrate is very crucial for improving the performance of the a-Si：H/c- Si heterojunction （SHJ） solar cell. The passivation performance of the a-Si：H layer is strongly dependent on its microstructure. Usually, the compact a-Si：H deposited near the transition from the amorphous phase to the nanocrystalline phase by plasma enhanced chemical vapor deposition （PECVD） can provide excellent passivation. However, at the low deposition pressure and low deposition power, such an a-Si：H layer can be only prepared in a narrow region. The deposition condition must be controlled very carefully. In this paper, intrinsic a- Si：H layers were prepared on n-type Cz c-Si substrates by 27.12 MHz PECVD at a high deposition pressure and high deposition power. The corresponding passivation perfor- mance on c-Si was investigated by minority carrier lifetime measurement. It was found that an excellent a-Si：H passivation layer could be obtained in a very wide deposition pressure and power region. Such wide process window would be very beneficial for improving the uniformity and the yield for the solar cell fabrication. The a-Si：H layer microstructure was further investigated by Raman and Fourier transform infrared （FTIR） spectro-scopy characterization. The correlation between the microstructure and the passivation performance was revealed. According to the above findings, the a-Si：H passivation performance was optimized more elaborately. Finally, a large-area SHJ solar cell with an efficiency of 22.25% was fabricated on the commercial 156 mm pseudo-square n-type Cz c-Si substrate with the opencircuit voltage （Voc） of up to 0.732 V.

关键词： PECVD high pressure and high power,a-Si:H microstructure passivation heterojunction solar cell

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Application of TiO_2 with different structures in solar cells

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Chinese Physics B 2012年第11期21卷 518-522页

作者：张天慧朴玲钰赵谡玲徐征吴谦孔超 National Center for Nanoscience and Technology Key Laboratory of Luminescence and Optical Information of the Ministry of Education Institute of Optoelectronics Technology Beijing Jiaotong University

The application of TiO2-based devices is mainly dependent on their crystalline structure, morphology, size, and exposed facets. Two kinds of TiO2 with different structures, namely TiO2 pompons and TiO2 nanotubes, have been prepared by the hydrothermal method. TiO2 with different structures is characterized by scanning electron microscopy （SEM）, X-ray diffraction （XRD）, and Brunauer Emmett-Teller （BET） surface area analysis. solar cells based on poly（3-hexylthiophene）（P3HT） and TiO2 with different structures are fabricated. In the device ITO/TiO2/P3HT/Au, the P3HT is designed to act as the electron donor, and TiO2 pompons and TiO2 nanotubes act as the electron acceptor. The effects of the TiO2 structure on the performance of hybrid heterojunction solar cells are investigated. The device with TiO2 pompons has an open circuit voltage （Voc） of 0.51 V, a short circuit current （Jsc） of 0.21 mA/cm2, and a fill factor （FF） of 28.3%. Another device with TiO2 nanotubes has a Voc of 0.5 V, Jsc of 0.27 mA/cm2, and FF of 28.4%. The results indicate that the TiO2 nanotubes with a unidimensional structure have better carrier transport and light absorption properties than TiO2 pompons. Consequently, the solar cell based on TiO2 nanotubes has a better performance.

关键词： TiO2 pompons TiO2 nanotubes heterojunction solar cell

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Fabrication of Large Area High Density, Ultra-Low Reflection Silicon Nanowire Arrays for Efficient solar cell Applications

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Nano Research 2011年第11期4卷 1136-1143页

作者： Subramani Thiyagu B. Parvathy Devi Zingway Pei Graduate Institute of Optoelectronic Engineeringi Department of Electdcal Engineeringi Chung Hsing University Taichung 40227Taiwan China

High density vertically aligned and high aspect ratio silicon nanowire （SiNW） arrays have been fabricated on a Si substrate using a template and a catalytic etching process. The template was formed from polystyrene （PS） nanospheres with diameter 30-50 nm and density 10^10/cm^2, produced by nanophase separation of PS-containing block-copolymers. The length of the SiNWs was controlled by varying the etching time with an etching rate of 12.5 nm/s. The SiNWs have a biomimetic structure with a high aspect ratio （-100）, high density, and exhibit ultra-low reflectance. An ultra-low reflectance of approximately 0.1% was achieved for SiNWs longer than 750 nm. Well-aligned SiNW/poly（3,4-ethylenedioxy-thiophene）：poly（styrenesulfonate）（PEDOT：PSS） heterojunction solar cells were fabricated. The n-type silicon nanowire surfaces adhered to PEDOT：PSS to form a core-sheath heterojunction structure through a simple and efficient solution process. The large surface area of the SiNWs ensured efficient collection of photogenerated carriers. Compared to planar cells without the nanowire structure, the SiNW/PEDOT：PSS heterojunction solar cell exhibited an increase in short-circuit current density from 2.35 mA/cm^2 to 21.1 mA/cm^2 and improvement in power conversion efficiency from 0.4% to 5.7%.

关键词： Ultra-low reflection silicon nanowire polystyrene nanosphere heterojunction solar cell

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Ultra-small interlayer spacing and nano channels in anionic layered perovskite CsPb(SCN)I enable efficient photoelectric conversion

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Science China Materials 2021年第1期64卷 61-72页

作者： Yiming Li Jiangjian Shi Huijue Wu Yanhong Luo Dongmei Li Qingbo Meng Key Laboratory for Renewable Energy Chinese Academy of SciencesBeijing Key Laboratory for New Energy Materials and DevicesInstitute of PhysicsChinese Academy of SciencesBeijing100190China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing100049China School of Physics Science University of Chinese Academy of SciencesBeijing100049China Songshan Lake Materials Laboratory Dongguan523808China

Due to distinctive lattice and electronic properties,the thiocyanate anion(SCN-)perovskite as an alluring two-dimensional(2D)material system,can be applied in optoelectronic ***,both photovoltaic and photodetection performances of the 2D Cs2Pb(SCN)2I2 have been *** with the conventional cationic 2D perovskites,Cs2Pb(SCN)2I2 possesses ultra-small interlayer spacing,additional interlayer nano channels,which is thus beneficial for charge transport *** planar heterojunction solar cell based on Cs2Pb(SCN)2I2 as the light absorber,has presented the highest power conversion efficiency among long-chain-cation-based 2D perovskite ***,the Cs2Pb(SCN)2I2-based photodetector also exhibits much higher photodetection performance(*** efficiency,on/off ratio,responsivity,detectivity,response speed,polarization sensitivity and detection stability).It is thus suggested that these outstanding photoelectric characteristics of Cs2Pb(SCN)2I2 could bring huge opportunities for its more abundant optoelectronic applications,such as field-effect transistor and light-emitting diodes.

关键词： 2D perovskite thiocyanate anion heterojunction solar cell photodetector

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