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heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory

Science China(Information Sciences) 2024年第6期67卷 190-197页

作者： Zheng BIAN Feng TIAN Zongwen LI Xiangwei SU Tianjiao ZHANG Jialei MIAO Bin YU Yang XU Yuda ZHAO College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation CentreZhejiang University

Optical memory integrates the function of optical sensing in memory devices, remarkably promoting the interconnection between sensory and memory terminals. Silicon charge-coupled photodetectors and floating gate memory have been widely used in imaging and storage technologies, respectively. However,the heterogeneous integration of the two devices requires technological innovation and complex electrical connections. In this work, we adopt a three-dimensional layer stacking method to design a novel optical memory device. On the top of Si charge-coupled photodetectors, we successively deposit two-dimensional graphene,hexagonal boron nitride, and molybdenum disulfide as a floating gate layer, a tunneling layer, and a readout layer, respectively. By applying a gate bias on lightly doped Si, a deep depletion layer is formed with a high voltage potential drop. Under dark conditions, the depletion layer cannot be filled, and the electric field across the h-BN tunnel barrier is relatively small. Under light irradiation, the deep depletion layer is gradually filled, and the h-BN tunneling layer withstands the increasing electric field, resulting in charge storage in the floating gate layer. Based on this mechanism, the device exhibits a gate voltage-dependent operation mode, including an integrated optical sensing-memory mode and an electrically driven storage mode. Under moderate gate voltage, the device can effectively detect the optical information with varied intensity and store the optical information in the floating gate, displaying optically controlled memory characteristics. Our work demonstrates a compact device structure for optical memory and displays excellent optically controlled memory performance, which can be applied in artificial vision systems.

关键词： heterogeneous integration charge-coupled device floating gate optical memory molybdenum disulfide lightly doped silicon

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Comparative coherence between layered and traditional semiconductors: unique opportunities for heterogeneous integration

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International Journal of Extreme Manufacturing 2023年第4期5卷 1-35页

作者： Zhuofan Chen Xiaonan Deng Simian Zhang Yuqi Wang Yifei Wu Shengxian Ke Junshang Zhang Fucheng Liu Jianing Liu Yingjie Liu Yuchun Lin Andrew Hanna Zhengcao Li Chen Wang State Key Laboratory of New Ceramics and Fine Processing Key Laboratory of Advanced Materials of Ministry of EducationSchool of Materials Science and EngineeringTsinghua UniversityBeijing 100084People’s Republic of China Beijing Advanced Innovation Center for Integrated Circuits Beijing 100084People’s Republic of China

As Moore’s law deteriorates,the research and development of new materials system are crucial for transitioning into the post Moore era.Traditional semiconductor materials,such as silicon,have served as the cornerstone of modern technologies for over half a century.This has been due to extensive research and engineering on new techniques to continuously enrich silicon-based materials system and,subsequently,to develop better performed silicon-based devices.Meanwhile,in the emerging post Moore era,layered semiconductor materials,such as transition metal dichalcogenides(TMDs),have garnered considerable research interest due to their unique electronic and optoelectronic properties,which hold great promise for powering the new era of next generation electronics.As a result,techniques for engineering the properties of layered semiconductors have expanded the possibilities of layered semiconductor-based devices.However,there remain significant limitations in the synthesis and engineering of layered semiconductors,impeding the utilization of layered semiconductor-based devices for mass applications.As a practical alternative,heterogeneous integration between layered and traditional semiconductors provides valuable opportunities to combine the distinctive properties of layered semiconductors with well-developed traditional semiconductors materials system.Here,we provide an overview of the comparative coherence between layered and traditional semiconductors,starting with TMDs as the representation of layered semiconductors.We highlight the meaningful opportunities presented by the heterogeneous integration of layered semiconductors with traditional semiconductors,representing an optimal strategy poised to propel the emerging semiconductor research community and chip industry towards unprecedented advancements in the coming decades.

关键词： heterogeneous integration van der Waals heterostructure post Moore era layered semiconductor transition metal dichalcogenide layered-traditional semiconductor heterostructure

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Efficient heterogeneous integration of InP/Si and GaSb/Si templates with ultra-smooth surfaces

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Science China(Information Sciences) 2022年第8期65卷 238-246页

作者： Tingting JIN Jiajie LIN Tiangui YOU Xiaolei ZHANG Hao LIANG Yifan ZHU Jialiang SUN Hangning SHI Chaodan CHI Min ZHOU Robert KUDRAWIEC Shumin WANG Xin OU State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences College of Information Science and Engineering Jiaxing University School of Information Science and Technology Shanghai Tech University Department of Semiconductor Materials Engineering Wroclaw University of Science and Technology Department of Microtechnology and Nanoscience Chalmers University of Technology

heterogeneous integration of InP and GaS b on Si substrates holds a huge potential interest in near-infrared and mid-infrared optoelectronic devices. In this study, 2-inch 180-nm-thick InP and 185-nmthick GaS b thin layers were successfully transferred onto the Si substrates to form high-quality and ultrasmooth InP/Si and GaS b/Si templates using molecular beam epitaxy(MBE) and the ion-slicing technique together with selective chemical etching. The relocation of the implantation-introduced damage in the sacrificial layer enables the transfer of relatively defect-free InP and GaS b thin films. The sacrificial layers were completely etched off by selective chemical etching, leaving ultra-smooth epitaxial surfaces with a roughness of 0.2 nm for the InP/Si template and 0.9 nm for the GaS b/Si template, respectively. Thus, the chemical mechanical polishing(CMP) process was not required to smooth the surface which usually introduces particles and chemical contaminations on the transferred templates. Furthermore, the donor substrate is not consumed and can be recycled to reduce the cost, which provides a paradigm for the sustainable and economic development of the Si integration platform.

关键词： heterogeneous integration InP/Si GaSb/Si MBE ion-slicing technique selective chemical etching

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heterogeneous integration of GaSb layer on(100)Si substrate by ion-slicing technique

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Chinese Physics B 2022年第7期31卷 442-447页

作者：刘仁杰林家杰沈正皓孙嘉良游天桂李进廖敏周益春 Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education School of Materials Science and EngineeringXiangtan UniversityXiangtan 411105China Hunan Provincial Key Laboratory of Thin Film Materials and Devices School of Materials Science and EngineeringXiangtan UniversityXiangtan 411105China College of Information Science and Engineering Jiaxing UniversityJiaxing 314001China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Science(CAS)Shanghai 200050China Beijing Semicore ZKX Electronics Equipment Co. LtdBeijing 100000China

integration of the high-quality Ga Sb layer on an Si substrate is significant to improve the Ga Sb application in optoelectronic integration.In this work,a suitable ion implantation fluence of 5×10^(16)-cm^(-2)H ions for Ga Sb layer transfer is confirmed.Combining the strain change and the defect evolution,the blistering and exfoliation processes of Ga Sb during annealing is revealed in detail.With the direct wafer bonding,the Ga Sb layer is successfully transferred onto a(100)Si substrate covered by 500-nm thickness thermal oxide SiO_(2)layer.After being annealed at 200℃,the Ga Sb layer shows high crystalline quality with only 77 arcsec for the full width at half maximum(FWHM)of the x-ray rocking curve(XRC).

关键词： ion-slicing technique heterogeneous integration GaSbOI

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heterogeneous integration of InP HEMTs on quartz wafer using BCB bonding technology

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Chinese Physics B 2022年第1期31卷 658-663页

作者：王彦富王博封瑞泽童志航刘桐丁芃苏永波周静涛杨枫丁武昌金智 University of Chinese Academic of Sciences Beijing 100029China High-Frequency High-Voltage Device and Integrated Circuits Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin University of Electronic TechnologyGuilin 541004China

heterogeneous integrated InP high electron mobility transistors(HEMTs)on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene(BCB)bonding technology.The channel of the new device is In_(0.7)Ga_(0.3)As,and the gate length is 100 nm.A maximum extrinsic transconductance gm,max of 855.5 mS/mm and a maximum drain current of 536.5 mA/mm are obtained.The current gain cutoff frequency is as high as 262 GHz and the maximum oscillation frequency reaches 288 GHz.In addition,a small signal equivalent circuit model of heterogeneous integration of InP HEMTs on quartz wafer is built to characterize device performance.

关键词： heterogeneous integration InP high electron mobility transistor quartz small-signal model

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heterogeneous integration of GaAs pHEMT and Si CMOS on the same chip

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Chinese Physics B 2016年第6期25卷 494-499页

作者：吴立枢赵岩沈宏昌张有涛陈堂胜 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute

In this work,we demonstrate the technology of wafer-scale transistor-level heterogeneous integration of Ga As pseudomorphic high electron mobility transistors（p HEMTs） and Si complementary metal–oxide semiconductor（CMOS） on the same Silicon substrate.Ga As p HEMTs are vertical stacked at the top of the Si CMOS wafer using a wafer bonding technique,and the best alignment accuracy of 5 μm is obtained.As a circuit example,a wide band Ga As digital controlled switch is fabricated,which features the technologies of a digital control circuit in Si CMOS and a switch circuit in Ga As p HEMT,15% smaller than the area of normal Ga As and Si CMOS circuits.

关键词： Si CMOS GaAs pHEMT heterogeneous integration benzocyclobutene

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Engineering applications and technical challenges of active array microsystems

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Frontiers of Information Technology & Electronic Engineering 2024年第3期25卷 342-368页

作者： Jiaguo LU Haoran ZHU East China Research Institute of Electronic Engineering Hefei 230039China School of Electronic and Information Engineering Anhui UniversityHefei 230601China

In the post-Moore era,the development of active phased array antennas will inevitably trend towards active array microsystems.In this paper,the characteristics and composition of the active array antenna are briefly described.Owing to the high efficiency,low profile,and light weight of the active array microsystems,the application prospects and advantages in the engineering of multi-functional airborne radar,spaceborne radar,and communication systems are analyzed.Moreover,according to the characteristics of the post-Moore era of integrated circuits,scientific and technological problems in the active array microsystems are presented,including multi-scale,multi-signal,and multi-physics field coupling.The challenges are also discussed,such as new architectures and algorithms,miniaturization of passive components,novel materials and processes,ultra-wideband technology,and new interdisciplinary technological applications.This paper is expected to inspire in-depth research on active array microsystems.

关键词： Microelectronics heterogeneous integration Packaging materials Antenna array microsystems Multi-functional radar Communication

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Progress on the program of Si-compatible two-dimensional semiconductor materials and devices

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Science China(Information Sciences) 2024年第6期67卷 152-171页

作者： Mingsheng XU Yuwei WANG Jiwei LIU Deren YANG College of Integrated Circuits State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University School of Materials Science and Engineering State Key Laboratory of Silicon and Advanced Semiconductor MaterialsZhejiang University

Two-dimensional(2D) materials are at the forefront of innovation, heralding a new era for nextgeneration electronics and optoelectronics. These materials are distinguished by their unique structural characteristics: they have no hanging bonds on their surface, exhibit weakened electrostatic shielding in the Z-direction, and boast atomic thickness in their monolayers. These features have led to groundbreaking discoveries in electrical, optical, and magnetic properties, paving the way for advancements in low-power electronics, valleytronics, infrared detectors, and memory devices. Despite these promising developments,Si-based technologies continue to dominate the landscape of next-generation electronics and optoelectronics,as well as heterogeneous integration. In response to this ongoing evolution, the National Natural Science Foundation of China(NSFC) initiated a major program in 2021 dubbed “Si-compatible two-dimensional semiconductor materials and devices”. This study reviews the progress made under the NSFC Program,spotlighting its main achievements and outlining key future research directions. Additionally, it sheds light on the challenges that researchers in the 2D domain face, particularly in developing Si-compatible 2D technologies.

关键词： two-dimensional materials Si-based CMOS technologies electronics and optoelectronics heterogeneous integration low-power

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Efficient thermal dissipation in wafer-scale heterogeneous integration of single-crystalline𝛽β-Ga_(2)O_(3)thin film on SiC

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Fundamental Research 2021年第6期1卷 691-696页

作者： Wenhui Xu Tiangui You Yibo Wang Zhenghao Shen Kang Liu Lianghui Zhang Huarui Sun Ruijie Qian Zhenghua An Fengwen Mu Tadatomo Suga Genquan Han Xin Ou Yue Hao Xi Wang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian UniversityXi’an 710071China School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Department of Physics State Key Laboratory of Surface PhysicsInstitute of Nanoelectronic Devices and Quantum ComputingFudan UniversityShanghai 200433China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Collaborative Research Center Meisei UniversityHinoJapan Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

The semiconductor,β-Ga_(2)O_(3)is attractive for applications in high power electronic devices with low conduction loss due to its ultra-wide bandgap(∼4.9 eV)and large Baliga’s figure of merit.However,the thermal conductivity of𝛽β-Ga_(2)O_(3)is much lower than that of other wide/ultra-wide bandgap semiconductors,such as SiC and GaN,which results in the deterioration of𝛽β-Ga_(2)O_(3)-based device performance and reliability due to self-heating.To overcome this problem,a scalable thermal management strategy was proposed by heterogeneously integrating wafer-scale single-crystalline𝛽β-Ga_(2)O_(3)thin films on a highly thermally conductive SiC substrate.Characterization of the transferred𝛽β-Ga_(2)O_(3)thin film indicated a uniform thickness to within±2.01%,a smooth surface with a roughness of 0.2 nm,and good crystalline quality with an X-ray rocking curves(XRC)full width at half maximum of 80 arcsec.Transient thermoreflectance measurements were employed to investigate the thermal properties.The thermal performance of the fabricated𝛽β-Ga_(2)O_(3)/SiC heterostructure was effectively improved in comparison with that of the𝛽β-Ga_(2)O_(3)bulk wafer,and the effective thermal boundary resistance could be further reduced to 7.5 m 2 K/GW by a post-annealing process.Schottky barrier diodes(SBDs)were fabricated on both a𝛽β-Ga_(2)O_(3)/SiC heterostructured material and a𝛽β-Ga_(2)O_(3)bulk wafer.Infrared thermal imaging revealed the temperature increase of the SBDs on𝛽β-Ga_(2)O_(3)/SiC to be one quarter that on the𝛽β-Ga_(2)O_(3)bulk wafer with the same applied power,which suggests that the combination of the𝛽-Ga_(2)O_(3)thin film and SiC substrate with high thermal conductivity promotes heat dissipation in𝛽β-Ga_(2)O_(3)-based devices.

关键词： Thermal management heterogeneous integration Wafer scale𝛽β-Ga_(2)O_(3)on SiC Ion-cutting technique Schottky barrier diodes(SBDs) Transient thermoreflectance(TTR) measurements

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Two-dimensional optoelectronic devices for silicon photonic integration

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Journal of Materiomics 2023年第3期9卷 551-567页

作者： Zilan Tang Shula Chen Dong Li Xiaoxia Wang Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and ChemometricsHunan Institute of Optoelectronic IntegrationCollege of Materials Science and EngineeringHunan UniversityChangshaHunan410082China

With the unprecedented increasing demand for extremely fast processing speed and huge data capacity,traditional silicon-based information technology is becoming saturated due to the encountered bottle-necks of Moore's Law.New material systems and new device architectures are considered promising strategies for this challenge.Two-dimensional(2D)materials are layered materials and garnered persistent attention in recent years owing to their advantages in ultrathin body,strong light-matter interaction,flexible integration,and ultrabroad operation wavelength range.To this end,the integra-tion of 2D materials into silicon-based platforms opens a new path for silicon photonic integration.In this work,a comprehensive review is given of the recent signs of progress related to 2D material inte-grated optoelectronic devices and their potential applications in silicon photonics.Firstly,the basic op-tical properties of 2D materials and heterostructures are summarized in the first part.Then,the state-of-the-art three typical 2D optoelectronic devices for silicon photonic applications are reviewed in detail.Finally,the perspective and challenges for the aim of 3D monolithic heterogeneous integration of these 2D optoelectronic devices are discussed.

关键词： Two-dimensional materials Silicon photonics heterogeneous integration Optoelectronic devices

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