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halide vapor phase epitaxy of monolayer molybdenum diselenide single crystals

National Science Open 2023年第4期2卷 55-64页

作者： Taotao Li Yang Yang Liqi Zhou Wenjie Sun Weiyi Lin Lei Liu Xilu Zou Si Gao Yuefeng Nie Yi Shi Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China National Laboratory of Solid State Microstructures Jiangsu Key Laboratory of Artificial Functional MaterialsCollege of Engineering and Applied Sciences and Collaborative Innovation Center of Advanced MicrostructuresNanjing UniversityNanjing 210093China School of Electronic Science and Engineering Xiamen UniversityXiamen 361005China College of Material Science and Engineering Nanjing Tech UniversityNanjing 201110China School of Integrated Circuits Nanjing UniversitySuzhou 215163China Suzhou Laboratory Suzhou 215000China

Single-crystalline transition metal dichalcogenides(TMD)films are of potential application in future electronics and *** this work,a halide vapor phase epitaxy(HVPE)strategy was proposed and demonstrated for the epitaxy of molybdenum diselenide(MoSe_(2))single crystals,in which metal halide vapors were in-situ produced by the chlorination of molybdenum as sources for the TMD *** with the epitaxial sapphire substrate,unidirectional domain alignment was successfully achieved and monolayer single-crystal MoSe_(2) films have been demonstrated on a 2-inch wafer for the first time.A series of characterizations ranging from centimeter to nanometer scales have been implemented to demonstrate the high quality and uniformity of the MoSe_(2).This work provides a universal strategy for the growth of TMD single-crystal films.

关键词： halide vapor phase epitaxy single-crystal molybdenum diselenide 2D semiconductor wafer-scale

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Influence comparison of N2 and NH3 nitrogen sources on AlN films grown by halide vapor phase epitaxy

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Chinese Physics B 2020年第7期29卷 428-432页

作者：陈晶晶黄俊苏旭军牛牧童徐科 Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of SciencesSuzhou 215123China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Suzhou Nanowin Science and Technology Co. Ltd.Suzhou 215123China

A comparison of the nitrogen sources(N2 and NH3)influence on AlN films grown by high-temperature halide vapor phase epitaxy(HVPE)is *** x-ray rocking curves(XRCs)indicate that the full width at half maximum(FWHM)of(0002)plane for AlN films using N2 as nitrogen source is generally smaller than that using *** microscope and atomic force microscope(AFM)results show that it is presently still more difficult to control the crack and surface morphology of AlN films with thicknesses of 5-10µm using N2 as the nitrogen source compared to that using *** with one-step growth,two-step growth strategy has been proved more effective in stress control and reducing the density of threading dislocations for AlN epilayers using N2 as the nitrogen *** investigations reveal that using N2 as nitrogen source in HVPE growth of AlN is immature at present,but exhibits great potential.

关键词： aluminum nitride halide vapor phase epitaxy surface structure nitrogen source

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