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Perfection of Perovskite grain boundary passivation by Rhodium Incorporation for Efficient and Stable Solar Cells

Nano-Micro Letters 2020年第9期12卷 203-213页

作者： Wei Liu Nanjing Liu Shilei Ji Hongfeng Hua Yuhui Ma Ruiyuan Hu Jian Zhang Liang Chu Xing’ao Li Wei Huang Institute of Advanced Materials and New Energy Technology Engineering Laboratory of Jiangsu Province Nanjing University of Posts and Telecommunications(NUPT)Nanjing 210023People’s Republic of China Shaanxi Institute of Flexible Electronics Northwestern Polytechnical UniversityXi’an 710072People’s Republic of China Guangdong Provincial Key Lab of Nano‑Micro Materials Research School of Chemical Biology and BiotechnologyPeking University Shenzhen Graduate SchoolShenzhen 518055People’s Republic of China

Organic cation and halide anion defects are omnipresent in the perovskite films,which will destroy perovskite electronic structure and downgrade the properties of devices.Defect passivation in halide perovskites is crucial to the application of solar cells.Herein,tiny amounts of trivalent rhodium ion incorporation can help the nucleation of perovskite grain and passivate the defects in the grain boundaries,which can improve efficiency and stability of perovskite solar cells.Through first-principle calculations,rhodium ion incorporation into the perovskite structure can induce ordered arrangement and tune bandgap.In experiment,rhodium ion incorporation with perovskite can contribute to preparing larger crystalline and uniform film,reducing trap-state density and enlarging charge carrier lifetime.After optimizing the content of 1% rhodium,the devices achieved an efficiency up to 20.71% without obvious hysteresis,from 19.09% of that pristine perovskite.In addition,the unencapsulated solar cells maintain 92% of its initial efficiency after 500 h in dry air.This work highlights the advantages of trivalent rhodium ion incorporation in the characteristics of perovskite solar cells,which will promote the future industrial application.

关键词： Perovskite solar cells grain boundary passivation Rhodium incorporation

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passivation engineering via silica‐encapsulated quantum dots for highly sensitive photodetection

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Carbon Energy 2023年第9期5卷 49-62页

作者： Ji Yun Chun Byung Gi Kim Jin Young Kim Woongsik Jang Dong Hwan Wang School of Integrative Engineering Chung‐Ang UniversitySeoulRepublic of Korea

Organometal halide perovskites are promising semiconducting materials for photodetectors because of their favorable optoelectrical properties.Although nanoscale perovskite materials such as quantum dots(QDs)show novel behavior,they have intrinsic stability issues.In this study,an effectively silane barrier-capped quantum dot(QD@APDEMS)is thinly applied onto a bulk perovskite photosensitive layer for use in photodetectors.QD@APDEMS is synthesized with a silane ligand with hydrophobic CH_(3)-terminal groups,resulting in excellent dispersibility and durability to enable effective coating.The introduction of the QD@APDEMS layer results in the formation of a lowdefect perovskite film with enlarged grains.This is attributed to the grain boundary interconnection effect via interaction between the functional groups of QD@APDEMS and uncoordinated Pb^(2+)in grain boundaries.By passivating the grain boundaries,where various trap sites are distributed,hole chargecarrier injection and shunt leakage can be suppressed.Also,from the energy point of view,the deep highest occupied molecular orbital(HOMO)level of QD@APDEMS can work as a hole charge injection barrier.Improved charge dynamics(generation,transfer,and recombination properties)and reduced trap density of QD@APDEMS are demonstrated.When this perovskite film is used in a photodetector,the device performance(especially the detectivity)stands out among existing perovskites evaluated for energy sensing device applications.

关键词： grain boundary passivation perovskite quantum dots photodetectors photosensitive layers trap

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