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A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor

Science China(Information Sciences) 2015年第4期58卷 166-175页

作者： ZHOU YangFan CAO ZhongXiang HAN Ye LI QuanLiang SHI Cong DOU RunJiang QIN Qi LIU Jian WU NanJian State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences

A low power 8T global shutter pixel with extended FD voltage swing range is proposed for large format high speed CMOS image sensor. The pixel has a negative threshold reset transistor, two in-pixel source followers, and a sample-and-hold circuit. The in-pixel first source follower is employed for reducing the pixel average current and maximum transient current. The negative threshold reset transistor is applied to extend the voltage swing of FD. Using pixel level sample-and-hold circuit, the k TC noise on FD node can be effectively nullified by correlated double sampling operation. A high speed 1000 fps 256×256 CMOS image sensor is implemented in 0.18 μm CMOS process. Two 10-bit cyclic ADC arrays are integrated in this prototype sensor chip. The active area of the chip is 10 mm×7 mm with a pixel size of 14 μm×14 μm. The developed sensor achieves an average current of 23 n A per pixel, a maximum transit current per pixel as low as 1113 n A, and a large FD voltage swing of 1.78 V. The sensor temporal noise level is 103 e-and full well capacity has 27000 e-which results in 48.3 d B signal dynamic range.

关键词： global shutter CDS low power negative threshold reset transistor high speed image sensor

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An Improved global shutter Pixel with Extended Output Range and Linearity of Compensation for CMOS Image Sensor

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Chinese Journal of Electronics 2021年第1期30卷 102-108页

作者： GUO Zhongjie YU Ningmei WU Longsheng School of Automation and Information Engineering Xi'an University of Technology Xi'an Microelectronic Technology Institute

An improved global shutter pixel structure with extended output range and linearity of compensation is proposed for CMOS image sensor. The potential switching of the sample and hold capacitor bottom plate outside the array is used to solve the problem of the serious swing limitation, which will attenuate the dynamic range of the image sensor. The non-linear problem caused by the substrate bias effect in the output process of the pixel source follower is solved by using the mirror FD point negative feedback self-establishment technology outside the array. The approach proposed in this paper has been verified in a global shutter CMOS image sensor with a scale of 1024×1024 pixels. The test results show that the output range is expanded from 0.95 V to 2 V, and the error introduced by the nonlinearity is sharply reduced from280 mV to 0.3 mV. Most importantly, the output range expansion circuit does not increase the additional pixel area and the power consumption. The power consumption of linearity correction circuit is only 23.1μW, accounting for less than 0.01% of the whole chip power consumption.

关键词： CMOS image sensor Pixel global shutter Output range Linearity

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A high speed 1000 fps CMOS image sensor with low noise global shutter pixels

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Science China(Information Sciences) 2014年第4期57卷 235-242页

作者： ZHOU YangFan CAO ZhongXiang QIN Qi LI QuanLiang SHI Cong WU NanJian State Key Laboratory for Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences

A low read noise 8T global shutter pixel for high speed CMOS image sensor is proposed in this *** pixel has a pixel level sample-and-hold circuit and an in-pixel amplifier whose gain is larger than *** pixel level sample-and-hold circuit,the KTC noise on FD node can be effectively cancelled by correlated double sampling *** in-pixel amplifier with a gain larger than one is employed for reducing the pixel level sample-and-hold capacitors thermal noise and their geometric size.A high speed 1000 fps 256×256 CMOS image sensor based on the pixel is implemented in 0.18μm CMOS *** chip active area is 5 mm×7 mm with a pixel size of 14μm×14μ*** developed sensor achieves a read noise level as low as 14.8e-while attaining a high fill factor of 40%.The full well capacity can contain 30840e-and the resulting signal dynamic range is 66 dB.

关键词： global shutter CDS low noise fill factor high speed image sensor

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Reset noise reduction through column-level feedback reset in CMOS image sensors

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Journal of Semiconductors 2011年第2期32卷 137-141页

作者：李斌桥徐江涛谢爽孙忠岩 School of Electronics and Information Engineering Tianjin University

A low reset noise CMOS image sensor （CIS） based on column-level feedback reset is proposed. A feedback loop was formed through an amplifier and a switch. A prototype CMOS image sensor was developed with a 0.18μm CIS process. Through matching the noise bandwidth and the bandwidth of the amplifier, with the falling time period of the reset impulse 6μs, experimental results show the reset noise level can experience up to 25 dB reduction. The proposed CMOS image sensor meets the demand of applications in high speed security surveillance systems, especially in low illumination.

关键词： CMOS image sensor reset noise feedback reset five-transistor pixel global shutter

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