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Laser enhanced gettering of silicon substrates

Frontiers in Energy 2017年第1期11卷 23-31页

作者： Daniel CHEN Matthew EDWARDS Stuart WENHAM Malcolm ABBOTT Brett HALLAM School of Photovoltaic and Renewable Energy Engineering University of New South Wales Kensington NSW 2052 Australia

One challenge to the use of lightly-doped, high efficiency emitters on multicrystalline silicon wafers is the poor gettering efficiency of the diffusion processes used to fabricate them. With the photovoltaic industry highly reliant on heavily doped phosphorus diffusions as a source of gettering, the transition to selective emitter structures would require new alternative methods of impurity extraction. In this paper, a novel laser based method for gettering is investigated for available silicon wafers used its impact on commercially in the manufacturing of solar cells. Direct comparisons between laser enhanced gettering （LasEG） and lightly-doped emitter diffusion gettering demonstrate a 45% absolute improvement in bulk minority carrier lifetime when using the laser process. Although grain boundaries can be effective gettering sites in multicrystalline wafers, laser processing can substantially improve the performance of both grain boundary sites and intra-grain regions. This improvement is correlated with a factor of 6 further decrease in interstitial iron concentra- tions. The removal of such impurities from multicrystalline wafers using the laser process can result in intra-grain enhancements in implied open-circuit voltage of up to 40 mV. In instances where specific dopant profiles are required for a diffusion on one surface of a solar cell, and the diffusion process does not enable effective gettering, LasEG may enable improved gettering during the diffusion process.

关键词： gettering multicystaline silicon impurities,laser doping

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Impact of thermal processes on multi-crystalline silicon

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Frontiers in Energy 2017年第1期11卷 32-41页

作者： Moonyong KIM Phillip HAMER Hongzhao LI David PAYNE Stuart WENHAM Malcolm ABBOTT Brett HALLAM School of Photovoltaic and Renewable Energy Engineering Universityof New South Wales Sydney NSW 2052 Australia Department of Materials University of Oxford Oxford OX1 3PH United Kingdom

Fabrication of modem multi-crystalline silicon solar cells involves multiple processes that are thermally intensive. These include emitter diffusion, thermal oxida- tion and firing of the metal contacts. This paper illustrates the variation and potential effects upon recombination in the wafers due to these thermal processes. The use of light emitter diffusions more compatible with selective emitter designs had a more detrimental effect on the bulk lifetime of the silicon than that of heavier diffusions compatible with a homogenous emitter design and screen-printed contacts. This was primarily due to a reduced effectiveness of gettering for the light emitter. This reduction in lifetime could be mitigated through the use of a dedicated gettering process applied before emitter diffusion. Thermal oxida- tions could greatly improve surface passivation in the intra- grain regions, with the higher temperatures yielding the highest quality surface passivation. However, the higher temperatures also led to an increase in bulk recombination either due to a reduced effectiveness of gettering, or due to the presence of a thicker oxide layer, which may interrupt hydrogen passivation. The effects of fast firing were separated into thermal effects and hydrogenation effects. While hydrogen can passivate defects hence improving the performance, thermal effects during fast firing can dissolve precipitating impurities such as iron or de-getter impurities hence lower the performance, leading to a poisoning of the intra-grain regions.

关键词： gettering grain boundaries hydrogen impurities oxidation passivation solar cell

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Mathematical model of oxygen outdiffusion

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中国有色金属学会会刊：英文版 1994年第3期4卷 71-76页

作者： Liu Rong Cheng, Qiuping Li Yidong She Siming(Central South University of Techology Chngsha 410083) Central South Univ of Technology Changsha China

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ＭＡＴＨＥＭＡＴＩＣＡＬＭＯＤＥＬＯＦＯＸＹＧＥＮＯＵＴＤＩＦＦＵＳＩＯＮＯＮＬｉｕＲｏｎｇ；Ｃｈｅｎｇ，ＱｉｕｐｉｎｇＬｉ；ＹｉｄｏｎｇＳｈｅＳｉｍｉｎｇ（ＣｅｎｔｒａｌＳｏｕｔｈＵｎｉｖｅｒｓｉｔｙｏｆＴｅｃｈｏｌｏｇｙＣｈｎｇｓｈａ４１００８３...

关键词： CZSi outdiffusion intrinsic gettering

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