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Thermoelectric Properties of n-type full-heusler Fe_(2-2x)Co_(2x) TiSn Prepared by an Ultra-fast Synthesis Process

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Journal of Wuhan University of Technology(Materials Science) 2021年第4期36卷 497-504页

作者： ZHAO Dongyan CHEN Yanning WANG Yubo ZHANG Haifeng FU Zhen WANG Shuaipeng YU Wen DU Jian WANG Wenhe QIU Junhao YAN Yonggao Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co.Ltd.Beijing 100192China Beijing Chip Identification Technology Co. Ltd.Beijing102200China State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of TechnologyWuhan 430070China

full-heusler alloy Fe_(2)TiSn was predicted to be a potential thermoelectric material with high mechanical properties and ***_(2)TiSn was usually prepared by arc-melting followed by annealing for 2 weeks,which takes a long time and consumes a large amount of *** this paper,Fe_(2)TiSn was prepared by an ultra-fast method,self-propagating high-temperature synthesis (SHS) combined with spark plasma *** bulk materials with uniform element distribution,well controlled composition and relative densities of over 97.5% were *** undoped Fe_(2)TiSn samples show p-type transport *** was heavily doped at the Fe site to prepare n-type Fe_(2-2x)Co_(2x) TiSn *** thermoelectric properties measurements carried out on the Co-doped samples show a highest ZT=0.02 at 300 K,which is about tripe the performance of the pristine Fe_(2)*** study provides a new approach for the rapid and low-cost preparation of full-heusler thermoelectric materials.

关键词： thermoelectric full-heusler Fe2TiSn SHS thermoelectric properties

Fabrication of Co2Fe（Al,Si） and Co2Fe（Al,Si）/MgO on Ge（111） Substrate and Its Magnetic Properties

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Journal of Electronic Science and Technology 2019年第2期17卷 109-115页

作者： Kohei Kataoka Nobuki Tezuka Masashi Matsuura Satoshi Sugimoto Graduate School of Engineering Tohoku University

We investigated the interfacial effects on magnetic properties in Co2Fe(Al,Si)/Ge (CFAS/Ge) and CFAS/MgO/Ge systems to demonstrate the effects of the interface structure on magnetic properties. CFAS and CFAS/MgO were deposited on the i-Ge(111) substrate. In-situ reflection high energy electron diffraction (RHEED) patterns showed epitaxially grown CFAS and MgO on Ge(111). According to the X-ray diffraction (XRD)φ-scan of CFAS(220), we determined that the crystallographic orientation relationships were CFAS(111)//Ge(111) and CFAS(111)//MgO(111) Ge(111). The magnetic properties were measured by the vibrating sample magnetometer (VSM) and the saturation magnetization Ms value of CFAS with 2-nm thick MgO reached the value of L21 ordered one. A uniaxial magnetic anisotropy behavior was observed both in CFAS/Ge and CFAS/MgO/Ge structures after annealing. We confirmed the behavior did not only originate from the CFAS/Ge interface but also CFAS/MgO and the ordering structure.

关键词： Co2Fe(Al,Si) full-heusler alloy magnetic anisotropy

Magneto-transport properties of the off-stoichiometric Co_2MnAl film epitaxially grown on GaAs(001)

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Journal of Semiconductors 2019年第5期40卷 51-54页

作者： Zhifeng Yu Hailong Wang Jialin Ma Shucheng Tong Jianhua Zhao State Key Laboratory of Superlattices and Microstructures Institute of Semiconductors Chinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences

We have investigated the magneto-transport properties of an off-stoichiometric full-heusler alloy Co_2MnAl single-crystalline film. The Co_(1.65)Mn_(1.35)Al(CMA) film epitaxially grown on Ⅲ–Ⅴ semiconductor GaAs substrate exhibits perpendicular magnetic anisotropy. The resistivity of the CMA film increases with the temperature T decreasing from 300 to 5 K, showing a semiconducting-like transport behavior. Different activation energies are found in three temperature regions with transition temperatures of 35 and 110 K. In the meanwhile, the remanent magnetization can be described by T^(3/2) and T^2 laws in the corresponding medium and high T ranges, respectively. The transition at around 110 K could be attributed to the ferromagnetism evolving from localized to itinerant state. The Curie temperature of the CMA film is estimated to be ～640 K. The intrinsic anomalous Hall conductivity of ～55 Ω^(-1) cm^(-1) is obtained, which is almost twenty times smaller than that of Co_2MnAl.

关键词： full-heusler alloy magneto-transport property activation model molecular-beam epitaxy