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Stoichiometric effect on electrical and near-infrared photodetection properties of full-composition-range GaAs1−xSbx nanowires

引用

Nano Research 2021年第11期14卷 3961-3968页

作者： Jiamin Sun Mingming Han Meng Peng Lei Zhang Dong Liu Chengcheng Miao Jiafu Ye Zhiyong Pang Longbing He Hailu Wang Qing Li Peng Wang Lin Wang Xiaoshuang Chen Chongxin Shan Litao Sun Weida Hu Zai-xing Yang School of Physics and School of Microelectronics Shandong UniversityJinan250100China State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai200083China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan430074China SEU-FEI Nano-Pico Center Key Lab of MEMS of Ministry of EducationCollaborative Innovation Center for Micro/Nano FabricationDevice and SystemSoutheast UniversityNanjing210096China School of Physics and Photoelectric Engineering Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou310024China Henan Key Laboratory of Diamond Optoelectronic Materials and Devices School of Physics and EngineeringZhengzhou UniversityZhengzhou450001China

As one of the most important narrow bandgap ternary semiconductors, GaAs1−xSbx nanowires (NWs) have attracted extensive attention recently, due to the superior hole mobility and the tunable bandgap, which covers the whole near-infrared (NIR) region, for technological applications in next-generation high-performance electronics and NIR photodetection. However, it is still a challenge to the synthesis of high-quality GaAs1−xSbx NWs across the entire range of composition, resulting in the lack of correlation investigation among stoichiometry, microstructure, electronics, and NIR photodetection. Here, we demonstrate the success growth of high-quality GaAs1−xSbx NWs with full composition range by adopting a simple and low-cost surfactant-assisted solid source chemical vapor deposition method. All of the as-prepared NWs are uniform, smooth, and straight, without any phase segregation in all stoichiometric compositions. The lattice constants of each NW composition have been well correlated with the chemical stoichiometry and confirmed by high-resolution transmission electron microscopy, X-ray diffraction, and Raman spectrum. Moreover, with the increase of Sb concentration, the hole mobility of the as-fabricated field-effect-transistors and the responsivity and detectivity of the as-fabricated NIR photodetectors increase accordingly. All the results suggest a careful stoichiometric design is required for achieving optimal NW device performances.

关键词： GaAs1−xSbx nanowire stoichiometry effect full-composition-range field-effect hole mobility near-infrared photodetection

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