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A broadband GaAs MMIC frequency doubler on left-handed nonlinear transmission lines

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Journal of Semiconductors 2011年第9期32卷 89-92页

作者：董军荣黄杰田超杨浩张海英 Institute of Microelectronics Chinese Academy of Sciences

A broadband frequency doubler using left-handed nonlinear transmission lines（LH NLTLs） based on MMIC technology is reported for the first time.The second harmonic generation on LH NLTLs was analyzed theoretically. A four-section LH NLTL which has a layout of 5.4×0.8 mm^2 was fabricated on GaAs semi-insulating substrate. With 20-dBm input power,the doubler obtained 6.33 dBm peak output power at 26.8 GHz with 24-43 GHz—6 dBm bandwidth.The experimental results were quite consistent with the simulated results.The compactness and the broad band characteristics of the circuit make it well suit for GaAs RF/MMIC application.

关键词： GaAs MMIC technology LH NLTLs frequency doubler

W-band push–push monolithic frequency doubler in 1-μm InP DHBT technology

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Journal of Semiconductors 2013年第9期34卷 122-127页

作者：姚鸿飞王显泰吴旦昱苏永波曹玉雄葛霁宁晓曦金智 Institute of Microelectronics Chinese Academy of Sciences

A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Ac tive halun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55 x 0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion Rain above 4.7 dB over 75-80 GHz.

关键词： frequency doubler W-band lnP DHBT push-push

An E-band CMOS frequency quadrupler with 1.7-dBm output power and 45-dB fundamental suppression

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Journal of Semiconductors 2022年第9期43卷 46-52页

作者： Xiaofei Liao Dixian Zhao Xiaohu You National Mobile Communication Research Laboratory Southeast UniversityNanjing 211189China Purple Mountain Laboratories Nanjing 211111China

This paper presents an E-band frequency quadrupler in 40-nm CMOS technology.The circuit employs two push-push frequency doublers and two single-stage neutralized amplifiers.The pseudo-differential class-B biased cascode topo-logy is adopted for the frequency doubler,which improves the reverse isolation and the conversion gain.Neutralization tech-nique is applied to increase the stability and the power gain of the amplifiers simultaneously.The stacked transformers are used for single-ended-to-differential transformation as well as output bandpass filtering.The output bandpass filter enhances the 4th-harmonic output power,while rejecting the undesired harmonics,especially the 2nd harmonic.The core chip is 0.23 mm^(2)in size and consumes 34 mW.The measured 4th harmonic achieves a maximum output power of 1.7 dBm with a peak conversion gain of 3.4 dB at 76 GHz.The fundamental and 2nd-harmonic suppressions of over 45 and 20 dB are achieved for the spectrum from 74 to 82 GHz,respectively.

关键词： capacitor neutralization CMOS E-band frequency doubler frequency quadrupler push-push

Well-balanced ambipolar diketopyrrolopyrrole-based copolymers for OFETs,inverters and frequency doublers

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Science China Chemistry 2021年第8期64卷 1410-1416页

作者： Jiaxin Yang Qingqing Liu Mengxiao Hu Shang Ding Jinyu Liu Yongshuai Wang Dan Liu Haikuo Gao Wenping Hu Huanli Dong Beijing National Laboratory for Molecular Sciences Key Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBeijing100190China School of Chemical Sciences University of Chinese Academy of SciencesBeijing100049China Tianjin Key Laboratory of Molecular Optoelectronic Sciences Department of ChemistrySchool of ScienceTianjin University&Collaborative Innovation Center of Chemical Science and EngineeringTianjin300072China

Conjugated polymers with well-balanced ambipolar charge transport is essential for organic circuits at low cost and large area with simplified fabrication techniques.Aiming at this point,herein,a novel asymmetric thiophene/pyridine-flanked diketopyrrolopyrrole-based copolymer(PPyTDPP-2FBT)is designed and synthesized.Due to the effect of incorporating F atoms on molecular energy alignment and conjugation conformation,the PPyTDPP-2FBT copolymer exhibits typical V-shaped ambipolar field-effect transfer characteristics with well-balanced hole and electron mobilities of 0.64 and 0.46 cm^(2)V^(−1)s^(−1),respectively.Furthermore,organic digital and analog circuits such as inverters and frequency doublers are successfully constructed based on solution-processed films of the PPyTDPP-2FBT copolymers which show a typical circuit operating mode with a high gain of 133 due to the well-balanced electrical properties.In addition,PPyTDPP-2FBT-based devices also demonstrate good stability and batch repeatability,suggesting their great potential applications in organic integrated electronic circuits.

关键词： conjugated polymers balanced ambipolar transport property organic field effect transistor inverter frequency doubler

A High Power 320–356GHz frequency Multipliers with Schottky Diodes

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Chinese Journal of Electronics 2016年第5期25卷 986-990页

作者： YAO Changfei ZHOU Ming LUO Yunsheng Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute(NEDI) Department of Microwave and Millimeter Wave Modules NEDI

A 320–356GHz fixed-tuned frequency doubler is realized with discrete Schottky diodes mounted on 50μm thick quartz substrate. Influence of circuit channel width and thermal dissipation of the diode junctions are discussed for high multiplying efficiency. The doubler circuit is flip-chip mounted on gold electroplated oxygenfree copper film for grounding of RF and DC signals, and better thermal transportation. The whole multiplying circuit is optimized and established in Computer simulation technology(CST) suite. The highest measured multiplying efficiency is 8.0% and its output power is 5.4mW at 328 GHz. The measured typical output power is 4.0mW in 320–356GHz.

关键词： Schottky diode frequency doubler Efficiency Thermal dissipation

Microwave frequency doubler Design Using a Ring Resonator

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Microwave Frequency Doubler Design Using a Ring Resonator

W-band high output power Schottky diode doublers with quartz substrate

2005年海峡两岸三地无线科技学术会

作者： Yangfan Liu Quan Xue and Chi Hou Chan Wireless Communications Research Centre, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong

This paper proposes a compact, high conversion gain microwave frequency doubler structure using a ring resonator. The input and output ports are orthogonally connected to the ring resonator for fundamental frequency isolation. Therefore, this structure can eliminate the bulky output filter. On the other hand, the orthogonal ports can constructively combine both input and output second harmonic power to enhance the conversion gain. For demonstration, an S-band frequency doubler is designed and measurement results show an 8 % 3-dB gain-bandwidth with a 7 dB peak conversion gain, and over 20 dBc unwanted frequency components suppression for the whole operating band.

关键词： frequency doubler harmonic suppression ring resonator

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Journal of Semiconductors 2013年第12期34卷 77-81页

作者：姚常飞周明罗运生李姣许从海 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Department of Microwave and Millimeter Wave Modules Nanjing Electronic Devices Institute

W-band quartz based high output power fix-tuned doublers are analyzed and designed with planar Schot- tky diodes. Full-wave analysis is carried out to find diode embedding impedances with a lumped port to model the nonlinear junction. Passive networks of the circuit, such as the low pass filter, the E-plane waveguide to strip transitions, input and output matching networks, and passive diode parts are analyzed by using electromagnetic simulators, and the different parts are then combined and optimized together. The exported S-parameters of the doubler circuit are used for multiply efficiency analysis. The highest measured output power is 29.5 mW at 80 GHz and higher than 15 mW in 76-94 GHz. The highest measured efficiency is 11.5% at 92.5 GHz, and the typical value is 6.0% in 70-100 GHz.

关键词： high output power frequency doubler planar Schottky diode efficiency

Single Fully Differential Second Generation Current Conveyor Based Four-Quadrant Analog Multiplier Design and Its Applications

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Chinese Journal of Electronics 2020年第5期29卷 959-965页

作者： ROY Suvajit PAL Radha-Raman Department of Physics and Technophysics Vidyasagar University

This manuscript presents a new fourquadrant analog multiplier using a recently reported current mode active building block, namely the Fully differential second generation current conveyor(FDCCⅡ).The proposed circuit employs single FDCCⅡ and two NMOSFETs only, thus has simple architecture. It is fully-integrable as no other external passive component has been used. Non-ideal behaviour of the reported configuration has been analysed considering current and voltage tracking errors of the FDCCⅡ. Workability of the derived multiplier is verified with PSPICE(Cadence16.6) simulations using model parameter of TSMC 0.35μm CMOS process and found to be in close agreement with theoretical anticipations. The static power consumption of the circuit is 0.107 mW. The circuit works well with good linearity(nonlinearity error ≤ 0.96%) for the input voltage range of ±0.5 V for a supply voltage of ±1 V and the output is insensitive to temperature variation. Simulation results show that the –3 dB bandwidth of the proposed multiplier is 20.67 MHz and the output referred noise√is less than 9 nV/Hz at 1 kΩ load condition. MonteCarlo analysis has also been performed for the proposed configuration. The applicability of the reported multiplier as amplitude modulator, squarer, and frequency doubler are also demonstrated.

关键词： Four-quadrant analog multiplier Fully differential second generation current conveyor (FDCCII) Amplitude modulator Squarer frequency doubler

Design of 20-44 GHz broadband doubler MMIC

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Journal of Semiconductors 2010年第4期31卷 113-116页

作者：李芹王志功李伟 Institute of RF-& OE-ICs Southeast University Institute of RF- & OE-ICs Southeast University

This paper presents the design and performance of a broadband millimeter-wave frequency doubler MMIC using active 0.15 μm GaAs PHEMT and operating at output frequencies from 20 to 44 GHz. This chip is composed of a single ended-into differential-out active Balun, balanced FETs in push-push configuration, and a distributed amplifier. The MMIC doubler exhibits more than 4 dB conversion gain with 12 dBm of output power, and the fundamental frequency suppression is typically -20 dBc up to 44 GHz. The MMIC works at VDD = 3.5 V, Vss = -3.5 V, Id = 200 mA and the chip size is 1.5× 1.8 mm^2.

关键词： frequency doubler active Balun distributed amplifier