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Investigation of AlGaN/GaN fluorine plasma treatment enhancement-mode high electronic mobility transistors by frequency-dependent capacitance and conductance analysis

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Chinese Physics B 2011年第1期20卷 643-646页

作者：全思郝跃马晓华于惠游 Key Laboratory of Wide Band Gap Semiconductor Materials and Devices Institute of MicroelectronicsXidian University

This paper reports fluorine plasma treatment enhancement-mode HEMTs （high electronic mobility transistors） EHEMTs and conventional depletion-mode HEMTs DHEMTs fabricated on one wafer using separate litho-photography technology. It finds that fluorine plasma etches the AlGaN at a slow rate by capacitance-voltage measurement. Using capacitance-frequency measurement, it finds one type of trap in conventional DHEMTs with TT = （0.5 - 6） ms and DT ：（1 - 5）×10^13 cm^-2. eV^-1. Two types of trap are found in fluorine plasma treatment EHEMTs, fast with TW（f）= （0.2 - 2） μs and slow with TT（s） = （0.5 - 6） ms. The density of trap states evaluated on the EHEMTs is Dw（f）：（1 - 3） × 10^12 cm^-2. eV^-1 and DT（s） =（2 - 6） × 10^12 cm-2. eV-1 for the fast and slow traps, respectively. The result shows that the fluorine plasma treatment reduces the slow trap density by about one order, but introduces a new type of fast trap. The slow trap is suggested to be a surface trap, related to the gate leakage current.

关键词： AlGaN/GaN enhancement-mode high electronic mobility transistors fluorine plasma treatment frequency dependent capacitance and conductance

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment

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Journal of Semiconductors 2011年第6期32卷 69-72页

作者：谢元斌全思马晓华张进城李青民郝跃 Key Laboratory of Wide Bandgap Semiconductor Materials and Devices Institute of MicroelectronicsXidian University

Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one ***-coupled FET logic circuits,such as an E/D HEMT inverter,NAND gate and D flip-flop,were fabricated on an AlGaN/GaN *** D flip-flop and NAND gate are demonstrated in a GaN system for the first *** dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area,integrating with a conventional AlGaN/GaN D-HEMT and demonstrating a NAND gate.E/D-mode D flip-flop was fabricated by integrating the inverters and the NAND gate on the AlGaN/GaN *** a supply voltage of 2 V,the E/D inverter shows an output logic swing of 1.7 V,a logic-low noise margin of 0.49 V and a logic-high noise margin of 0.83 *** NAND gate and D flip-flop showed correct logic function demonstrating promising potential for GaN-based digital ICs.

关键词： AlGaN/GaN fluorine plasma treatment inverter NAND gate D flip-flop

fluorine-plasma treated AlGaN/GaN high electronic mobility transistors under off-state overdrive stress

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Chinese Physics B 2022年第11期31卷 493-499页

作者： Dongyan Zhao Yubo Wang Yanning Chen Jin Shao Zhen Fu Fang Liu Yanrong Cao Faqiang Zhao Mingchen Zhong Yasong Zhang Maodan Ma Hanghang Lv Zhiheng Wang Ling Lv Xuefeng Zheng Xiaohua Ma Beijing Engineering Research Center of High-reliability IC with Power Industrial Grade Beijing Smart-Chip Microelectronics Technology Co.Ltd.Beijing 100192China Beijing Chip Identification Technology Co. Ltd.Beijing 102200China School of Electro-Mechanical Engineering Xidian UniversityXi'an 710071China Key Lab of Wide Band-Gap Semiconductor Materials and Devices Xidian UniversityXi'an 710071China

Influences of off-state overdrive stress on the fluorine-plasma treated AlGaN/GaN high-electronic mobility transistors(HEMTs)are experimentally *** is observed that the reverse leakage current between the gate and source decreases after the off-state stress,whereas the current between the gate and drain *** analyzing those changes of the reverse currents based on the Frenkel–Poole model,we realize that the ionization of fluorine ions occurs during the off-state ***,threshold voltage degradation is also observed after the off-state stress,but the degradations of AlGaN/GaN HEMTs treated with different F-plasma RF powers are *** comparing the differences between those devices,we find that the F-ions incorporated in the GaN buffer layer play an important role in averting ***,suggestions to obtain a more stable fluorine-plasma treated AlGaN/GaN HEMT are put forwarded.

关键词： AlGaN/GaN HEMT fluorine plasma treatment off-state overdrive stress