检索结果-南通市图书馆

Large family of two-dimensional ferroelectric metals discovered via machine learning

Science Bulletin 2021年第3期66卷 233-242,M0003页

作者： Xing-Yu Ma Hou-Yi Lyu Kuan-Rong Hao Yi-Ming Zhao Xiaofeng Qian Qing-Bo Yan Gang Su School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China Center of Materials Science and Optoelectronics Engineering College of Materials Science and Optoelectronic TechnologyUniversity of Chinese Academy of SciencesBeijing 100049China Department of Materials Science and Engineering College of Engineering and College of ScienceTexas A&M UniversityCollege StationTX 77843USA Kavli Institute for Theoretical Sciences and CAS Center for Excellence in Topological Quantum ComputationUniversity of Chinese Academy of SciencesBeijing 100190China

ferroelectricity and metallicity are usually believed not to coexist because conducting electrons would screen out static internal electric *** 1965,Anderson and Blount proposed the concept of"ferroelectric metal",however,it is only until recently that very rare ferroelectric metals were ***,by combining high-throughput ab initio calculations and data-driven machine learning method with new electronic orbital based descriptors,we systematically investigated a large family(2964)of two-dimensional(2D)bimetal phosphates,and discovered 60 stable ferroelectrics with out-of-plane polarization,including 16 ferroelectric metals and 44 ferroelectric semiconductors that contain seven *** ferroelectricity origins from spontaneous symmetry breaking induced by the opposite displacements of bimetal atoms,and the full-d-orbital coinage metal elements cause larger displacements and polarization than other *** 2D ferroelectric metals,the odd electrons per unit cell without spin polarization may lead to a half-filled energy band around Fermi level and is responsible for the *** is revealed that the conducting electrons mainly move on a single-side surface of the 2D layer,while both the ionic and electric contributions to polarization come from the other side and are vertical to the above layer,thereby causing the coexistence of metallicity and *** der Waals heterostructures based on ferroelectric metals may enable the change of Schottky barrier height or the Schottky-Ohmic contact type and induce a dramatic change of their vertical transport *** work greatly expands the family of 2D ferroelectric metals and will spur further exploration of 2D ferroelectric metals.

关键词： ferroelectric metal 2D ferroelectricity Multiferroics Ab initio calculations Machine learning

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

Sr-doping effects on conductivity,charge transport,and ferroelectricity of Ba_(0.7)La_(0.3)TiO_(3) epitaxial thin films

引用

Chinese Physics B 2021年第2期30卷 514-519页

作者： Qiang Li Dao Wang Yan Zhang Yu-Shan Li Ai-Hua Zhang Rui-Qiang Tao Zhen Fan Min Zeng Guo-Fu Zhou Xu-Bing Lu Jun-Ming Liu Institute for Advanced Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China Guangdong Provincial Key Laboratory of Optical Information Materials South China Academy of Advanced OptoelectronicsSouth China Normal UniversityGuangzhou 510006China National Center for International Research on Green Optoelectronics South China Normal UniversityGuangzhou 510006China Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures Nanjing UniversityNanjing 210009China

Sr-doped Ba_(0.7)La_(0.3)TiO_(3)(BSLTO)thin films are deposited by pulsed laser deposition,and their microstructure,conductivity,carrier transport mechanism,and ferroelectricity are systematically *** x-ray diffraction measurements demonstrate that Sr-doping reduces the lattice constant of BSLTO thin films,resulting in the enhanced phonon energy in the films as evidenced by the Raman ***-temperature and Hall effect measurements demonstrate that Sr can gradually reduce electrical resistivity while the electron concentration remains almost unchanged at high *** the films with semiconducting behavior,the charge transport model transforms from variable range hopping to small polaron hopping as the measurement temperature *** metalic conductive behaviors in the films with Sr=0.30,0.40 conform to thermal phonon scattering *** difference in charge transport behavior dependent on the A-site cation doping,is *** is revealed that the increasing of phonon energy by Sr doping is responsible for lower activation energy of small polaron hopping,higher carrier mobility,and lower electrical ***,the piezoelectric force microscopy(PFM)results demonstrate that all the BSLTO films can exhibit ferroelectricity,especially for the room temperature metallic conduction film with Sr=*** results imply that Sr-doping could be a potential way to explore ferroelectric metal materials for other perovskite oxides.

关键词： Sr-doping transport mechanism BSLTO thin film ferroelectric metal

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

ferroelectricity in hBN intercalated double-layer graphene

引用

Frontiers of physics 2022年第4期17卷 59-65页

作者： Yibo Wang Siqi Jiang Jingkuan Xiao Xiaofan Cai Di Zhang Ping Wang Guodong Ma Yaqing Han Jiabei Huang Kenji Watanabe Takashi Taniguchi Yanfeng Guo Lei Wang Alexander S.Mayorov Geliang Yu National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China National Institute for Materials Science 1-1 NamikiTsukuba 305-0044Japan Collaborative Innovation Centre of Advanced Microsctructures Nanjing UniversityNanjing 210093China School of Physical Science and Technology Shanghai Tech UniversityShanghai 201210China

Van der Waals(vdW)assembly of two-dimensional materials has long been recognized as a powerful tool for creating unique systems with properties that cannot be found in natural compounds[Nature 499,419(2013)].However,among the variety of vdW heterostructures and their various properties,only a few have revealed metallic and ferroelectric behaviour signatures[***.5,eaax5080(2019);Nature 560,336(2018)].Here we show ferroelectric semimetal made of double-gated double-layer graphene separated by an atomically thin crystal of hexagonal boron *** structure demonstrates high room temperature mobility of the order of 10 m2·V^(−1)·s^(−1) and exhibits ambipolar switching in response to the external electric *** observed hysteresis is reversible and persists above room *** fabrication method expands the family of ferroelectric vdW compounds and offers a promising route for developing novel phase-changing devices.A possible microscopic model of ferroelectricity is discussed.

关键词： double-layer graphene ferroelectric metal intercalation dry transfer high-mobility

来源：

维普期刊数据库

同方期刊数据库评论

在线全文

学校读者我要写书评

暂无评论

欢迎您,

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案：

请选择收藏分类：

通借通还

欢迎您,

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

在线全文

在线全文

在线全文

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：