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Silicon Vacancy Color Centers in 6H-SiC Fabricated by femtosecond laser Direct writing

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Nanomanufacturing and Metrology 2023年第1期6卷 69-78页

作者： Zhanqi Zhou Zongwei Xu Ying Song Changkun Shi Kun Zhang Bing Dong State Key Laboratory of Precision Measuring Technology and Instruments Laboratory of Micro/Nano Manufacturing TechnologyTianjin UniversityTianjin 300072China

As a single photon source,silicon vacancy(V_(Si))centers in wide bandgap semiconductor silicon carbide(SiC)are expected to be used in quantum technology as spin qubits to participate in quantum sensing and quantum ***,the new direct femtosecond(fs)laser writing technology has been successfully applied to preparing V_(Si)s in *** this study,6H-SiC,which has been less studied,was used as the processed material.V_(Si) center arrays were formed on the 6H-SiC surface using a 1030-nm-wavelength fs pulsed *** surface was characterized by white light microscopy,atomic force microscopy,and confocal photoluminescence(PL)/Raman *** effect of fs laser energy,vector polarization,pulse number,and repetition rate on 6H-SiC V_(Si) defect preparation was analyzed by measuring the V_(Si) PL signal at 785-nm laser *** results show that fs laser energy and pulse number greatly influence the preparation of the color center,which plays a key role in optimizing the yield of V_(Si)s prepared by fs laser nanomachining.

关键词： Silicon carbide Silicon vacancy color center femtosecond laser writing Confocal photoluminescence/Raman spectroscopy

femtosecond laser-inscribed optical waveguides in dielectric crystals:a concise review and recent advances

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Advanced Photonics 2022年第2期4卷 23-51页

作者： Lingqi Li Weijin Kong Feng Chen Qingdao University College of Physics ScienceCenter for Marine Observation and CommunicationsQingdaoChina Shandong University School of PhysicsState Key Laboratory of Crystal MaterialsJinanChina

femtosecond laser inscription or writing has been recognized as a powerful technique to engineer various materials toward a number of *** efficient modification of refractive indices of dielectric crystals,optical waveguides with diverse configurations have been produced by femtosecond laser *** waveguiding properties depend not only on the parameters of the laser writing but also on the nature of the *** mode profile tailoring and polarization engineering are realizable by selecting appropriate fabrication *** addition,regardless of the complexity of crystal refractive index changes induced by ultrafast pulses,several three-dimensional geometries have been designed and implemented that are useful for the fabrication of laser-written photonic *** intriguing devices,e.g.,waveguide lasers,wavelength converters,and quantum memories,have been made,exhibiting potential for applications in various *** work gives a concise review of the femtosecond laser-inscribed waveguides in dielectric crystals and focuses on the recent advances of this research area,including the fundamentals,fabrication,and selected photonic applications.

关键词： femtosecond laser writing femtosecond laser inscription optical waveguides dielectric crystals laser crystals nonlinear optical crystals waveguide lasers frequency/wavelength conversion quantum photonic chip quantum memories

Tailoring light on three-dimensional photonic chips: a platform for versatile OAM mode optical interconnects

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Advanced Photonics 2023年第3期5卷 118-126页

作者： Jue Wang Chengkun Cai Feng Cui Min Yang Yize Liang Jian Wang Huazhong University of Science and Technology Wuhan National Laboratory for Optoelectronics and School of Optical and Electronic InformationWuhanChina Optics Valley Laboratory WuhanChina

Explosive growth in demand for data traffic has prompted exploration of the spatial dimension of lightwaves, which provides a degree of freedom to expand data transmission capacity. Various techniques basedon bulky optical devices have been proposed to tailor light waves in the spatial dimension. However, theirinherent large size, extra loss, and precise alignment requirements make these techniques relativelydifficult to implement in a compact and flexible way. In contrast, three-dimensional (3D) photonic chips withcompact size and low loss provide a promising miniaturized candidate for tailoring light in the spatialdimension. Significantly, they are attractive for chip-assisted short-distance spatial mode optical interconnectsthat are challenging to bulky optics. Here, we propose and fabricate femtosecond laser-inscribed 3D photonicchips to tailor orbital angular momentum (OAM) modes in the spatial dimension. Various functions on theplatform of 3D photonic chips are experimentally demonstrated, including the generation, (de)multiplexing,and exchange of OAM modes. Moreover, chip-chip and chip–fiber–chip short-distance optical interconnectsusing OAM modes are demonstrated in the experiment with favorable performance. This work paves the wayto flexibly tailor light waves on 3D photonic chips and offers a compact solution for versatile opticalinterconnects and other emerging applications with spatial modes.

关键词： orbital angular momentum three-dimensional photonic chips femtosecond laser writing spatial modes chip-chip chip-fiber-chip optical interconnects

Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by a femtosecond laser

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Nanotechnology and Precision Engineering 2020年第4期3卷 218-228页

作者： Jiayu Liu Zongwei Xu Ying Song Hong Wang Bing Dong Shaobei Li Jia Ren Qiang Li Mathias Rommel Xinhua Gu Bowen Liu Minglie Hu Fengzhou Fang State Key Laboratory of Precision Measuring Technology&Instruments Centre of MicroNano Manufacturing TechnologyTianjin UniversityTianjin 300072China State Key Laboratory of Separation Membranes and Membrane Processes Tiangong UniversityTianjin 300387China Tianjin Kaiprin Optoelectronic Technology Co. Ltd.Tianjin 300300China CAS Key Laboratory of Quantum Information University of Science and Technology of ChinaHefei 230026China Fraunhofer Institute for Integrated Systems and Device Technology(IISB) Schottkystrasse 10Erlangen 91058Germany Ultrafast laser Lab Tianjin UniversityTianjin 300072China

Silicon-vacancy(VSi)centers in silicon carbide(SiC)are expected to serve as solid qubits,which can be used in quantum computing and *** a new controllable color center fabrication method,femtosecond(fs)laserwriting has been gradually applied in the preparation of VSi in *** this study,4H-SiCwas directlywritten by an fs laser and characterized at 293 K by atomic force microscopy,confocal photoluminescence(PL),and Raman *** signals of VSi were found and analyzed using 785 nm laser excitation by means of depth profiling and two-dimensional *** influence of machining parameters on the VSi formation was analyzed,and the three-dimensional distribution of VSi defects in the fs laser writing of 4H-SiC was established.

关键词： Silicon-vacancy defect Silicon carbide femtosecond laser writing Confocal photoluminescence spectroscopy Raman spectroscopy Atomic force microscopy