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Study of Non-Ideal effects for extended gate field effect transistor Chlorine Ion Sensing Device

稀有金属材料与工程 2006年第A3期35卷 242-243页

作者： Jung-Chuan Chou Pei-Lan Chou Graduate School of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China Graduate School of Optoelectronics National Yunlin University of Science and TechnologyDouliouTaiwan 640China

We use the extended gate field effect transistor (EGFET)as the structure of the chlorine ion sensor,and the chlorine ion ionophores (ETH9033 and TDDMAC1)are incorporated into solvent polymeric membrane (PVC/DOS),then the chlorine ion selective membrane is formed on the sensing window,and the fabrication of the EGFET chlorine ion sensing device is *** surface potential on the sensing membrane of the EGFET chlorine ion sensing device will be changed in the different chlorine ion concentration solutions,then changes further gate voltage and drain current to detect chlorine ion *** will study non-ideal effects such as temperature,hysteresis and drift effects for the EGFET chlorine ion sensing device in this paper,these researches will help us to improve the sensing characteristics of the EGFET chlorine ion sensing device.

关键词： extended gate field effect transistor chlorine ion ionophore chlorine ion sensing device temperature effect hysteresis effect drift effect

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维普期刊数据库

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Study on the Drift effect of Potassium Ion Sensing Based on the extended gate field effect transistor

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稀有金属材料与工程 2006年第A3期35卷 259-260页

作者： Jung-Chuan Chou Ching-Hsiang Hsu Department of Electronic Engineering National Yunlin University of Science and TechnologyDouliouTaiwan 640China

The advantages of the extended gate field effect transistor (EGFET) compared with the ion sensitive field effect transistor (ISFET) are easy package,easy preservation,insensitive light effect,and better *** EGFET has above advantages,there are still some non-ideal effects such as drift etc..The drift behavior exists during the measurement process and results in the variation of the output voltage with *** can obtain the drift value by immersing EGFET into the pH solution for 12 hours and measure the rate of the output voltage versus time after S *** study analyzes the sensitivity, stability,and drift effect of the EGFET based on the structure of the ruthenium oxide/silicon (RuO_x/Si) wafer for measuring the potassium *** fabrication of the potassium ion sensor can be widely employed in medical detection.

关键词： potassium ion extended gate field effect transistor RuO_x/Si wafer sensitivity drift

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维普期刊数据库

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Study on the Carbon Nanotube Separative Structure for the extended gate H^+-Ion Sensitive field effect transistor

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稀有金属材料与工程 2006年第A3期35卷 225-227页

作者： Yi-Hung Liao Jung-Chuan Chou Graduate School of Engineering Science and Technology National Yunlin University of Science and TechnologyDouliouYunlinTaiwan 640China

We use the carbon nanotube (CNT) as the material of the pH sensing layer of the separative structure for the extended gate H^+-ion sensitive field effect transistor (EGFET) *** CNT paste was prepared with CNT powder,Ag powder,silicagel,the di-n-butyl phthalate and the toluene solvents by appropriate ratio,then immobilized on the silicon substrate to form the carbon nanotube sensing *** measured theⅠ_(DS)-Ⅴ_G curves of the carbon nanotube separative structure EGFET device in the different pH buffer solutions by the Keithley 236Ⅰ-Ⅴmeasurement *** to the experimental results,we can obtain the pH sensitivities of the carbon nanotube separative structure EGFET device,which is 62.54mV/pH from pH1 to pH13.

关键词： carbon nanotube extended gate field effect transistor pH sensitivity buffer solution

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维普期刊数据库

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