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Controlling exciton-exciton annihilation in WSe_(2) bilayers via interlayer twist

Nano Research 2022年第5期15卷 4661-4667页

作者： Yuzhong Chen Bichuan Cao Cheng Sun Zedong Wang Hongzhi Zhou Linjun Wang Haiming Zhu Key Laboratory of Excited-State Materials of Zhejiang Province Department of ChemistryZhejiang UniversityHangzhou 310027China

The twist angle between two van der Waals coupled monolayers has emerged as a new and powerful degree of freedom for engineering physical properties of semiconductor homo-and *** the interlayer twist has shown prominent effect on electronic and optical properties of transition metal dichalcogenide(TMD)bilayers,it remains unclear how it could be used to manipulate the exciton dynamics,especially exciton-exciton annihilation(EEA)process which is the dominant energy loss channel in TMDs under moderate to high exciton density due to strong Coulomb ***,we show that the twist angle in TMD bilayers can act as an effective knob to control the EEA ***,EEA rate constant increases from 1° twisted WSe_(2) bilayers(0.026 cm^(2)/s)by more than twice to 32° twisted bilayers(0.053 cm2/s)and then drops again in 60° twisted bilayers(0.019 cm^(2)/s).This twist-angle dependence can be attributed to the energy difference between indirect and direct excitons arising from the interlayer *** work opens up the possibility of artificially managing the exciton dynamics in TMD materials for optoelectronic applications via interlayer twist angle.

关键词： two-dimensional bilayer twist angle transient absorption exciton-exciton annihilation interlayer coupling

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Defect-induced distinct exciton-exciton interactions in WS2 monolayers

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Science China Materials 2022年第9期65卷 2502-2510页

作者： Weihao Zheng Peng Fan Danliang Zhang Biyuang Zheng Cuihuan Ge Ying Chen Boyi Xu Zilan Tang Jianwu Liu Tian Zhang Ying Jiang Xiao Wang Xiaoli Zhu Shula Chen Quan Yuan Anlian Pan Key Laboratory for Micro-Nano Physics and Technology of Hunan Province State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and EngineeringHunan UniversityChangsha 410082China School of Physics and Electronics Hunan UniversityChangsha 410082China Wuhan National Laboratory for Optoelectronics Huazhong University of Science and TechnologyWuhan 430074China Molecular Science and Biomedicine Laboratory(MBL) Institute of Chemical Biology and NanomedicineState Key Laboratory of Chemo/Biosensing and ChemometricsCollege of Chemistry and Chemical EngineeringHunan UniversityChangsha 410082China

The optoelectronic properties of atomically thin transition metal dichalcogenides(TMDs)are largely influenced by defect populations(DPs).In this work,we fabricate WSmonolayers with different DPs by varying the fabrication methods and further reveal their distinct exciton-exciton ***-state photoluminescence(PL)experiments show that the monolayer with the lowest DP shows optimal PL intensity at low excitation power;however,it is overtaken and significantly surpassed by monolayers with higher DPs at high excitation ***-power-dependent experiments demonstrate that these monolayers exhibit distinct PL saturation behaviors with the threshold power differing by four orders of *** with in situ PL imaging and time-resolved PL experiments,we attribute such PL evolution discrepancies to the different DPs within these monolayers,which largely influence the exciton diffusion behavior and subsequently bring about distinct nonradiative exciton-exciton annihilations(EEAs).Valley polarization experiments are further employed to re-examine the DPs of these *** work reveals the distinct PL behaviors and underlying exciton dynamics in TMD monolayers with different DPs,which can largely facilitate the engineering of relevant high-performance devices for practical applications.

关键词： transition metal dichalcogenides monolayers defect population exciton diffusion exciton-exciton annihilation

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