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第十五届国际光伏科学与工程大会

作者： Daniel Inns Axel Straub Mason Terry Yidan Huang Armin G.Aberle Centre for Photovoltaic Engineering University of New South Wales UNSW Sydney NSW 2052 Australia

Si epitaxy for fabricating solar cells on glass is a challenging field, due to the temperature restrictions placed on the process by the glass substrate. High-temperature silicon epitaxy (above 900℃) is simpler as any oxide on the growth surface de-sorbs at these temperatures, and the thermal energy gives high-quality crystal growth. During epitaxy at temperatures below 700℃, the limited thermal energy makes growth more difficult, and is complicated by rapid oxide formation. Heating experiments have been performed to obtain optimal growth with minimal oxide contamination of the silicon seed layer. The low-temperature growth still results in many defects. Atomic hydrogen effectively passivates many of the defects, which greatly improves the electronic quality of the material. The higher the hydrogen passivation temperature used, the better the open-circuit voltage of the solar cell.

关键词： epitaxy Hydrogen passivation Thin film photovoltaics

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Growth of Ⅲ-Ⅴ semiconductor nanowires and their heterostructures

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Science China Materials 2016年第1期59卷 51-91页

作者：李昂邹进韩晓东 Institute of Microstructure and Property of Advanced Materials Beijing University of TechnologyBeijing 100124China School of Mechanical and Mining Engineering and Centre for Microscopy and Microanalysis University of QueenslandSt LuciaQLD 4072Australia

In this paper, we present a review about recent progress on the growth of III-V semiconductor homo- and heterostructured nanowires. We will first deliver a general discussion on the crystal structure and the conventional growth mechanism of one dimensional nanowires. Then we provide a review about most widely used growth techniques, sample preparation and the cutting edge characterization techniques including advanced electron microscopy, in situ electron diffraction, micro-Raman spectroscopy, and atom probe tomography. In the end, the growth of different heteostructured III-V semiconductor nanowires will be reviewed. We will focus on the morphology dependence, temperature influence, and III/V flux ratio dependent growth. The perspective and an outlook of this field is discussed in order to foresee the future of the fundamental research and application of these one dimensional nanostructures.

关键词： Ⅲ-Ⅴ semiconductor heterostructure nanowire advanced charactrization epitaxy growth

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