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The X-ray diffraction study of epitaxial La_(0.67)Sr_(0.33)MnO_(3）single crystal thin film

Chinese Science Bulletin 1997年第22期42卷 1932-1936页

作者： GAO Jie XIONG Caoshui TANG Yeqing ZHU Hong PI Li ZHU Jingsheng ZHOU Guien ZHANG Yuheng Structure Research Laboratory University of Science and Technologly of ChinaHefei 230026China Department of Physics Xinjiang UniversityUrumqi 830046China

THE colossal magnetoresistance (CMR) effects in doped perovskite-like oxide have stimulatedconsiderable attention to the study of fundamental physics and the application of new type ma-terials. It was reported that a ... 详细信息

关键词： colossal magnetoresistance La_(0.67)Sr_(0.33)MnO_(3) epitaxial thin film pole figure lattice match

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Giant electrocaloric effect in BiFeO_(3) and La codoped PbZr_(0.7)Ti_(0.3)O_(3) epitaxial thin films in a broad temperature range

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Journal of Materiomics 2022年第1期8卷 156-165页

作者： Miaomiao Zhang Laijun Liu Rusen Yang Ping Yu Qi Zhang Biaolin Peng Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials Center on Nanoenergy ResearchGuangxi UniversityNanning530004China Guangxi Key Laboratory of Optical and Electronic Materials and Devices Guilin University of TechnologyGuilin541004China School of Advanced Materials and Nanotechnology Xidian UniversityXi'an710126China College of Material Science and Engineering Sichuan UniversityChengdu610064China BCMaterials Basque Centre for MaterialsApplications and NanostructuresUPV/EHU Science Park48940LeioaSpain IKERBASQUE Basque Foundation for SciencePlaza Euskadi5Bilbao48009Spain

Ferroelectric thin/thick films with large electrocaloric(EC)effect are critical for solid state cooling ***,large positive EC effects with two EC peaks in a broad temperature range(~100 K)were obtained in 0.95Pb_(0.92)La_(0.08)(Zr_(0.70)Ti_(0.30))_(0.98)O_(3)-0.05BiFeO_(3)(BFO-La-codoped PZT)epitaxial thin films deposited on the(100),(110)and(111)oriented SrTiO_(3)(STO)substrates by a sol-gel *** thin film deposited on the(111)oriented STO substrate exhibited a stronger EC effect(~20.6 K at 1956 kV/cm)near room ***,the thin films deposited on the(100)and(110)oriented STO substrates exhibited a stronger EC effect(~18.8 K at 1852 kV/cm and~20.8 K at 1230 kV/cm,respectively)around the peak of the dielectric permittivity(T_(m),~375 K).Particularly,as the direction of the applied electric field was switched(Ethin films around T_(m) was enhanced significantly from 18.8 K to 38.1 *** self-induced-poling during the preparing process maybe plays a key role on the magic *** can be concluded that the BFO-La-codoped PZT epitaxial thin films are promising candidates for application in the next solid-state cooling devices.

关键词： Sol-gel epitaxial thin film Electrocaloric effect Self-induce-poled

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Investigations of structural phase transformation and THz properties across metal–insulator transition in VO2/Al2O3epitaxial films

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Progress in Natural Science:Materials International 2015年第5期25卷 386-391页

作者： Mengmeng Yang Yuanjun Yang Bin Hong Yi Zhao Xiaoguang Li Yalin Lu Zhenlin Luo Chen Gao National Synchrotron Radiation Laboratory & Collaborative Innovation Center of Chemistry for Energy Materials University of Science and Technology of China CAS Key Laboratory of Materials for Energy Conversion Department of Materials Science and Engineering University of Science and Technology of China Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics University of Science and Technology of China

Vanadium dioxide(VO2) epitaxial thin films on(0001)-oriented Al2O3substrates were prepared using radio frequency(RF) magnetron sputtering *** study the metal-insulator-transition(MIT) mechanism and extend the applications of VO2epitaxial films at terahertz(THz) band,temperature-dependent X-ray diffraction(XRD) and THz time domain spectroscopy of the VO2epitaxial films were *** the lattice constants and THz transmission exhibited a similar and sharp transition that was similar to that observed for the electrical ***,the MIT of the VO2/Al2O3epitaxial films should be co-triggered by the structural phase transition and electronic ***,the very large resistance change(on the order of103) and THz response(with a transmission modulation ratio of87%) in the VO2/Al2O3epitaxial heterostructures are promising for electrical switch and electro-optical device applications.

关键词： VO2 epitaxial thin film THz-TDS Metal-insulator transition Structural phase transition

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