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Chinese Physics B 2022年第4期31卷 653-659页

作者：张泽宇张强米文博 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology School of ScienceTianjin UniversityTianjin 300354China Core Technology Platforms New York University Abu DhabiP.O.Box 129188Abu DhabiUnited Arab Emirates

epitaxial Mn_(4)N films with different thicknesses were fabricated by facing-target reactive sputtering and their anomalous Hall effect(AHE)is investigated *** Hall resistivity shows a reversed magnetic hysteresis loop with the magnetic *** magnitude of the anomalous Hall resistivity sharply decreases with decreasing temperature from300 K to 150 *** AHE scaling law in Mn_(4)N films is influenced by the temperature-dependent magnetization,carrier concentration and interfacial *** scaling laws are used to distinguish the various contributions of AHE *** scaling exponentγ>2 for the conventional scaling in Mn_(4)N films could be attributed to the residual resistivityρ_(xx0).The longitudinal conductivityσ_(xx)falls into the dirty *** scaling ofρ_(AH)=αρ_(xx0)+bρ_(xx)~nis used to separate out the temperature-independentρ_(xx0)from extrinsic ***,the relationship betweenρ_(AH)and pxx is fitted by the proper scaling to clarify the contributions from extrinsic and intrinsic mechanisms of AHE,which demonstrates that the dominant mechanism of AHE in the Mn4 N films can be ascribed to the competition between skew scattering,side jump and the intrinsic mechanisms.

关键词： Mn_(4)N epitaxial film anomalous Hall effect scaling law

Magnetic and Transport Properties of Mn_(0.98)Cr_(0.02)Te epitaxial films Grown on Al_2O_3 Substrates

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Journal of Materials Science & Technology 2014年第2期30卷 103-106页

作者： Z.H.Wang D.Y.Geng J.Li Y.B.Li Z.D.Zhang Shenyang National Laboratory for Materials Science Institute of Metal Researchand International Centre for Materials PhysicsChinese Academy of Sciences Changchun Institute of Optics Fine Mechanics and PhysicsChinese Academy of Sciences

The epitaxial Mno0.98Cr0.02Te films on single crystal Al2O3 （0001） substrates were prepared by pulsed laser deposition. The X-ray diffraction and scanning electron microscopy results showed that the good continuous epitaxial film was obtained with substrate temperature of 500 ℃. When the substrate temperature reached 700 ℃, the film was island growth and the manganese oxides phase appeared. The temperature dependence of both the magnetization and electrical resistance showed a sharp rise at around 60 K due to the magnetoelastic coupling. The temperature dependence of the electrical resistance of Mno0.98Cr0.02Te provided evidence for a transition from the metallic to semiconducting state at 305 K due to the spin disorder scattering with a large contribution from the influence of magnon drag.

关键词： Magnetic properties Mno0.98Cr0.02Te films X-ray diffraction epitaxial film

First-principles study of FeSe epitaxial films on SrTiO_3

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Chinese Physics B 2015年第11期24卷 10-14页

作者：刘凯高淼卢仲毅向涛 Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices Renmin University of China Institute of Physics Chinese Academy of Sciences

The discovery of high temperature superconductivity in FeSe films on SrTiO3 substrate has inspired great experimen- tal and theoretical interests. First-principles density functional theory calculations, which have played an important role in the study of bulk iron-based superconductors, also participate in the investigation of interfacial superconductivity. In this article, we review the calculation results on the electronic and magnetic structures of FeSe epitaxial films, emphasiz- ing on the interplay between different degrees of freedom, such as charge, spin, and lattice vibrations. Furthermore, the comparison between FeSe monolayer and bilayer films on SrTiO3 is discussed.

关键词： iron-based superconductor first-principles calculations epitaxial film

Substrate Effect on the Structural and Electrical Properties of LaNiO_(3) Thin films

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Journal of Wuhan University of Technology(Materials Science) 2022年第4期37卷 559-563页

作者：姚丹 WANG Weiwei YU Jiangying YOU Yuwei Key Laboratory of Advanced Electronic Materials and Devices School of Mathematics&PhysicsAnhui Jianzhu UniversityHefei 230601China Department of Materials Hefei Guoxuan High-Tech Power Energy Co.LtdHefei 230011China

epitaxial LaNiO_(3)(LNO)thin films prepared from the sols modified with polyethyleneimine(PEI)were grown on single-crystal LaAlO_(3),(LaAlO_(3))_(0.3)(SrAlTaO_(6))_(0.7),and SrTiO_(3) substrates,respectively,using a simple polymer assisted deposition(PAD).The epitaxial structure,surface morphologies and transport of the LNO films were studied by X-ray diffraction(θ/2θ symmetric scan,ω-scan,and in-planeφ-scan),the field emission scanning electron microscopy,and a standard dc four-probe *** is found that,compared with that of LNO bulk,the c-axis parameter of the LNO film increases under compressive strain and decreases under tensile *** the LNO films exhibit metal properties in the temperature-dependent *** resistivity of the LNO films shows an increasing trend with the lattice mismatch strain changing from compressive to *** is suggested that the oxygen vacancy compensated by more Ni^(2+)changed from Ni^(3+)in the film increases with the strain changing from compressive to tensile,which results in the increase of the resistivity.

关键词： nickelates electrical properties epitaxial film polymer assisted deposition