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Surface reconstructions and reflection high-energy electron diffraction intensity oscillations during homoepitaxial growth on nonmisoriented GaAs(111)B by MBE

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Journal of Semiconductors 2010年第11期31卷 1-4页

作者：杨瑞霞武一宾牛晨亮杨帆 School of Information Engineering Hebei University of Technology The 13th Electronic Research Institute CETC

The growth by molecular beam epitaxy of high quality GaAs epilayers on nonmisoriented GaAs（111）B substrates is *** control of the GaAs epilayers is achieved via in situ,real time measurement of the specular beam intensity of reflection high-energy electron diffraction（RHEED）.Static surface phase maps of GaAs（111）B have been generated for a variety of incident As flux and substrate temperature *** dependence of GaAs（111）B surface reconstruction phases on growth parameters is ***（191/2×191/2） surface reconstruction is identified to be the optimum starting surface for the latter growth of mirror-smooth *** of growth conditions are optimized in terms of the static surface phase diagram and the temporal RHEED intensity oscillations.

关键词： GaAs(111)B RHEED surface reconstruction epilayer

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MOCVD epitaxy of InAlN on different templates

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Journal of Semiconductors 2011年第9期32卷 24-28页

作者：贠利君魏同波闫建昌刘喆王军喜李晋闽 R&D Center for Semiconductor Lighting Institute of SemiconductorsChinese Academy of Sciences

InAlN epilayers were grown on high quality GaN and A1N templates with the same growth parameters. Measurement results showed that two samples had the same In content of～16%,while the crystal quality and surface topography of the InAlN epilayer grown on the AlN template,with 282.3＂（002） full width at half maximum （FWHM） of rocking curve,313.5＂（102） FWHM,surface roughness of 0.39 nm and V-pit density of 2.8×10~8 cm^（-2）,were better than that of the InAlN epilayer grown on the GaN template,309.3＂,339.1＂,0.593 nm and 4.2×10~8 cm^（-2）.A primary conclusion was proposed that both the crystal quality and the surface topography of the InAlN epilayer grown on the AlN template were better than that of the InAlN epilayer grown on the GaN template. Therefore,the AlN template was a better choice than the GaN template for getting high quality InAlN epilayers.

关键词： InAlN epilayer template crystal quality surface topography

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Improved GaN grown on Si(111) substrate using ammonia flow modulation on SiN_x mask layer by MOCVD

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Science China(Technological Sciences) 2009年第9期52卷 2758-2761页

作者： NG KaiWei LAU KeiMay Department of Electrical and Electronic Engineering Hong Kong University of Science & Technology Clear Water BayKowloon Hong Kong China

In this paper,1 μm n-GaN was grown by using varied and fixed ammonia flow (NH3) on SiNx mask layer on Si(111) substrate using metal organic chemical vapor deposition (MOCVD). In-situ optical reflectivity traces of GaN growth show that the three-to two-dimensional process has been prolonged by using varied ammonia flow on SiNx mask layer method compared with that grown by fixing ammonia flow. Structural and optical properties were characterized by high-resolution X-ray diffraction and photolu-minescence,and compared with the sample grown by fixing ammonia flow,GaN grown using the varied ammonia flow on SiNx mask layer showed better structure and optical quality. It was assumed that the low NH3 flow in the initial growth stage considerably increased the GaN island density on the nano-porous SiNx layer by enhancing vertical growth. Lateral growth was significantly favored by high NH3 flow in the subsequent step. As a result,the improved crystal and optical quality was achieved utilizing NH3 flow modulation for GaN buffer growth on Si(111) substrate.

关键词： GaN epilayer MOCVD NH3 modulation

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