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Erratum to: On the voltage behavior of quantum dot light-emitting diode

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Nano Research 2024年第4期17卷 3424-3424页

作者： Xiangwei Qu Jingrui Ma Pai Liu Kai Wang Xiao Wei Sun Institute of Nanoscience and Applications Southern University of Science and TechnologyShenzhen 518055China Key Laboratory of Energy Conversion and Storage Technologies(Southern University of Science and Technology) Ministry of EducationGuangdong University Key Laboratory for Advanced Quantum Dot Displays and LightingGuangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and DevicesShenzhen Key Laboratory for Advanced Quantum Dot Displays and Lightingand Department of Electrical and Electronic EngineeringSouthern University of Science and TechnologyShenzhen 518055China

Erratum to Nano Research,2023,16(4):5511–5516 https://***/10.1007/s12274-022-5106-8 The title in the article was unfortunately mispresented on page 5511.The title of the article should be corrected to“On the voltage sweep behavior of quantum dot light-emitting diode”.Instead of On the voltage behavior of quantum dot light-emitting diode It should read On the voltage sweep behavior of quantum dot light-emitting diode.

关键词： diode emitting voltage

Colloidal quantum-dot light emitting diodes with bias-tunable color

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Photonics Research 2022年第7期10卷 1633-1639页

作者： GE MU TIANYU RAO MENGLU CHEN YIMEI TAN QUN HAO XIN TANG School of Optics and Photonics Beijing Institute of TechnologyBeijing 100081China Beijing Key Laboratory for Precision Optoelectronic Measurement Instrument and Technology Beijing 100081China Yangtze Delta Region Academy of Beijing Institute of Technology Jiaxing 314019China

Although the performance of quantum-dot-based light emitting diodes(QLEDs)has been significantly enhanced over the past years,conventional full-color QLED displays still rely on the side-by-side pattern techniques of red(R)/green(G)/blue(B)quantum dots(QDs).Such lateral integration of multi-color pixels imposes technological difficulty in the development of high-resolution displays due to limited pixel density and fill factors.Herein,we demonstrate the development of full-color QLEDs with bias-tunable emission spectra by engineering mixed R/G/B QDs as light emitting layers.In Commission Internationale de l'Eclairage(CIE)chromaticity coordinates,QLEDs with bias-tunable color exhibit wide color variation ranging from red(0.649,0.330)to green(0.283,0.305)to blue(0.255,0.264)upon increasing voltages and can be tuned to emit white light(0.316,0.325).More importantly,the fabricated multi-color QLEDs show high luminance approaching 103cd m^(-2)and superior external quantum efficiency of 13.3%.Benefitting from the wide spectral tunability and light emitting efficiency,we believe the proposed multi-color QLEDs have great application prospects for both displays and lighting.

关键词： tunable diodes emitting

N-polar InGaN/GaN nanowires: overcoming the efficiency cliff of red-emitting micro-LEDs

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Photonics Research 2022年第4期10卷 1107-1116页

作者： A.Pandey Y.Malhotra P.Wang K.Sun X.Liu Z.Mi Department of Electrical Engineering and Computer Science University of MichiganAnn ArborMichigan 48109USA Department of Materials Science and Engineering University of MichiganAnn ArborMichigan 48109USA

A high efficiency, high brightness, and robust micro or sub-microscale red light emitting diode(LED) is an essential, yet missing, component of the emerging virtual reality and future ultrahigh resolution mobile displays.We report, for the first time, to our knowledge, the demonstration of an N-polar In GaN/GaN nanowire submicroscale LED emitting in the red spectrum that can overcome the efficiency cliff of conventional red-emitting micro-LEDs. We show that the emission wavelengths of N-polar In GaN/GaN nanowires can be progressively shifted from yellow to orange and red, which is difficult to achieve for conventional In GaN quantum wells or Ga-polar nanowires. Significantly, the optical emission intensity can be enhanced by more than one order of magnitude by employing an in situ annealing process of the In GaN active region, suggesting significantly reduced defect formation. LEDs with lateral dimensions as small as ~0.75 μm, consisting of approximately five nanowires, were fabricated and characterized, which are the smallest red-emitting LEDs ever reported, to our knowledge. A maximum external quantum efficiency ~1.2% was measured, which is comparable to previously reported conventional quantum well micro-LEDs operating in this wavelength range, while our device sizes are nearly three to five orders of magnitude smaller in surface area.

关键词： InGaN/GaN emitting polar

Heavy atom effects benefit organic light emitting diode(OLED)performance

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Science China Chemistry 2023年第1期66卷 1-3页

作者： Martin R.Bryce Departmentof Chemistry Durham UniversityDurham DHI3LEUnited Kingdom

This Highlight is inspired by a recent article in Nature Photonics in which Yang and co-workers [1] from Shenzhen University report new selenium-integrated thermally activated delayed fluorescence(TADF) molecules and their applications in organic light-emitting diodes(OLEDs).This work represents an important development in this field due to the remarkably high efficiency with which light is emitted from the devices.

关键词： OLED emitting diode

Perovskite nanocrystals for light-emitting diodes

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Journal of Semiconductors 2022年第9期43卷 1-5页

作者： Xinyi Mei Lixiu Zhang Xiaoliang Zhang Liming Ding School of Materials Science and Engineering Beihang UniversityBeijing 100191China Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China

With superior photoluminescence quantum yields(PLQYs),tunable bandgap,high color purity and solution pro-cessibility[1,2],metal halide perovskite nanocrystals(PNCs)with a general formula of ABX_(3)(A=CH_(3)NH_(3)+(MA+),CH(NH_(2))_(2)^(+)(FA^(+))and Cs^(+),B=Pb^(2+),Sn^(2+)and Mn^(2+),X=Cl-,Br-and I-)emerge as promising luminescent materials in light-emitting diodes(LEDs)and solid-state lighting[2−4].Since elec-troluminescence(EL)of PNCs was first observed in CsPbBr3 PNC-based LEDs with an external quantum efficiency(EQE)of 0.07%in 2015[5],the efficiencies for different LEDs have been significantly boosted.

关键词： diodes nanocrystals emitting

Microcavity top-emission perovskite light-emitting diodes

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Light(Science & Applications) 2020年第1期9卷 1164-1169页

作者： Yanfeng Miao Lu Cheng Wei Zou Lianghui Gu Ju Zhang Qiang Guo Qiming Peng Mengmeng Xu Yarong He Shuting Zhang Yu Cao Renzhi Li Nana Wang Wei Huang Jianpu Wang Key Laboratory of Flexible Electronics(KLOFE)&Institute of Advanced Materials(IAM) Nanjing Tech University(NanjingTech)30 South Puzhu RoadNanjing 211816China Frontiers Science Center for Flexible Electronics(FSCFE) Shaanxi Institute of Flexible Electronics(SIFE)&Shaanxi Institute of Biomedical Materials and Engineering(SIBME)Northwestern Polytechnical University(NPU)127 West Youyi RoadXi’an 710072China

Light-emitting diodes(LEDs)based on perovskites show great potential in lighting and display applications.However,although perovskite films with high photoluminescence quantum efficiencies are commonly achieved,the efficiencies of perovskite LEDs are largely limited by the low light out-coupling efficiency.Here,we show that high-efficiency perovskite LEDs with a high external quantum efficiency of 20.2% and an ultrahigh radiant exitance up to 114.9mWcm^(−2) can be achieved by employing the microcavity effect to enhance light extraction.The enhanced microcavity effect and light outcoupling efficiency are confirmed by the study of angle-dependent emission profiles.Our results show that both the optical and electrical properties of the device need to be optimized to achieve high-performance perovskite LEDs.

关键词： diodes emitting light

Blue emitting CsPbBr3 perovskite quantum dot inks obtained from sustained release tablets

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Nano Research 2019年第12期12卷 3129-3134页

作者： Hewei Yang Yaqing Feng Zhiyu Tu Kuo Su Xiaozhi Fan Bingjie Liu Zhiping Shi Yuzhe Zhang Chenyang Zhao Bao Zhan School of Chemical Engineering and Technology Tianjin UniversityTianjin 300350China Collaborative Innovation Center of Chemical Science and Engineering(Tianjin) Tianjin 300072China School of Life Sciences Tianjin UniversityTianjin 300072China

Blue emitting perovskite ink obtained from cesium lead halide quantum dots bearing chlorine(CsPbClxBr3-x,0 详细信息

Blue emitting perovskite ink obtained from cesium lead halide quantum dots bearing chlorine(CsPbClxBr3-x,0

关键词： sustained release tablet perovskite quantum dot blue emitting perovskite ink polymer gel surface passivation

630-nm red InGaN micro-light-emitting diodes(<20μm×20μm)exceeding 1 mW/mm~2 for full-color micro-displays

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Photonics Research 2021年第9期9卷 1796-1802页

作者： ZHE ZHUANG DAISUKE IIDA MARTIN VELAZQUEZ-RIZO KAZUHIRO OHKAWA Computer Electrical and Mathematical Sciences and Engineering(CEMSE)DivisionKing Abdullah University of Science and Technology(KAUST)Thuwal 23955-6900Saudi Arabia

We demonstrated 10×10 arrays of In Ga N 17μm×17μm micro-light-emitting diodes(μLEDs)with a peak wavelength from 662 to 630 nm at 10–50 A∕cm^(2).The on-wafer external quantum efficiency reached 0.18%at 50 A∕cm^(2).The output power density of the redμLEDs was obtained as 1.76 m W∕mm^(2),which was estimated to be higher than that of 20μm×20μm Al In Ga P redμLEDs(~630 nm).Finally,we demonstrate that In Ga N red/green/blueμLEDs could exhibit a wide color gamut covering 81.3%and 79.1%of the Rec.2020 color space in CIE 1931 and 1976 diagrams,respectively.

关键词： diodes emitting arrays

Interface engineering yields efficient perovskite light-emitting diodes

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Journal of Semiconductors 2023年第12期44卷 4-7页

作者： Rashid Khan Guangyi Shi Wenjing Chen Zhengguo Xiao Liming Ding Key Laboratory of Strongly-Coupled Quantum Matter Physics(CAS) Department of PhysicsUniversity of Science and Technology of ChinaHefei 230026China Center for Excellence in Nanoscience(CAS) Key Laboratory of Nanosystem and Hierarchical Fabrication(CAS)National Center for Nanoscience and TechnologyBeijing 100190China

Metal-halide perovskites(MHPs)have emerged as a new class of semiconductors used in perovskite solar cells(PSCs)[1-5],perovskite light-emitting diodes(PeLEDs)[6-12],photo/X-ray detectors[13-16],and memristors[17,18].P... 详细信息

关键词： diodes emitting LEDs