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Real- and momentum-indirect neutral and charged excitons in a multi-valley semiconductor

National Science Open 2023年第4期2卷 76-85页

作者： Zhiheng Huang Yuhui Li Tao Bo Yanchong Zhao Fanfan Wu Lu Li Yalong Yuan Yiru Ji Le Liu Jinpeng Tian Yanbang Chu Xiaozhou Zan Yalin Peng Xiuzhen Li Yangkun Zhang Kenji Watanabe Takashi Taniguchi Zhipei Sun Wei Yang Dongxia Shi Shixuan Du Luojun Du Guangyu Zhang Beijing National Laboratory for Condensed Matter Physics Key Laboratory for Nanoscale Physics and DevicesInstitute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100190China Ningbo Institute of Materials Technology&Engineering Chinese Academy of SciencesNingbo 315201China Research Center for Functional Materials National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan International Center for Materials Nanoarchitectonics National Institute for Materials Science1-1 NamikiTsukuba 305-0044Japan Department of Electronics and Nanoengineering Aalto UniversityTietotie 3Espoo FI-02150Finland Quantum Technology Finland(QTF)Centre of Excellence Department of Applied PhysicsAalto UniversityAalto FI-00076Finland Beijing Key Laboratory for Nanomaterials and Nanodevices Beijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China

Excitons dominate the photonic and optoelectronic properties of a *** significant advancements exist in understanding various types of excitons,progress on excitons that are indirect in both real-and momentum-spaces is still ***,we demonstrate the real-and momentum-indirect neutral and charged excitons(including their phonon replicas)in a multi-valley semiconductor of bilayer MoS_(2),by performing electric-field/doping-density dependent *** with first-principles calculations,we uncover that the observed real-and momentum-indirect exciton involves electron/hole from K/Γvalley,solving the longstanding controversy of its momentum ***,the binding energy of real-and momentum-indirect charged exciton is extremely large(i.e.,~59 meV),more than twice that of real-and momentum-direct charged exciton(i.e.,~24 meV).The giant binding energy,along with the electrical tunability and long lifetime,endows real-and momentum-indirect excitons an emerging platform to study many-body physics and to illuminate developments in photonics and optoelectronics.

关键词： excitons real-and momentum-indirect exciton giant binding energy electrical tunability multi-valley semiconductor

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