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Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structures at room temperature

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Chinese Physics B 2014年第4期23卷 545-550页

作者： Ibrahim Ycedag Ahmet Kaya Semsettin Altindal Ibrahim Uslu Department of Computer Engineering Technology Faculty Duzce University Department of Opticianry Vocationel School of Medical Sciences Turgut Ozal University Department of Physics Faculty of Science and Arts Gazi University Department of Chemistry Faculty of Science and Arts Gazi University

In order to investigate of cobalt-doped interracial polyvinyl alcohol （PVA） layer and interface trap （Dit） effects, A1/p- Si Schottky barrier diodes （SBDs） are fabricated, and their electrical and dielectric properties are investigated at room temperature. The forward and reverse admittance measurements are carded out in the frequency and voltage ranges of 30 kHz-300 kHz and -5 V-6 V, respectively. C-V or er-V plots exhibit two distinct peaks corresponding to inversion and accumulation regions. The first peak is attributed to the existence of Dit, the other to the series resistance （Rs）, and interfacial layer. Both the real and imaginary parts of dielectric constant （er and err） and electric modulus （Mr and Mrr）, loss tangent （tan~）, and AC electrical conductivity （aac） are investigated, each as a function of frequency and applied bias voltage. Each of the M~ versus V and Mrr versus V plots shows a peak and the magnitude of peak increases with the increasing of frequency. Especially due to the Dit and interfacial PVA layer, both capacitance （C） and conductance （G/w） values are strongly affected, which consequently contributes to deviation from both the electrical and dielectric properties of A1/Co-doped PVA/p-Si （MPS） type SBD. In addition, the voltage-dependent profile of Dit is obtained from the low-high frequency capacitance （CLF-CHF） method.

关键词： Al/Co-PVA/p-Si (MPS) electrical and dielectric properties AC electrical conductivity frequencyand voltage dependence

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Effects of barium on the nonlinear electrical characteristics and dielectric properties of SnO2-based varistors

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Chinese Physics B 2004年第11期13卷 1936-1940页

作者：王春明王矜奉王春雷陈洪存苏文斌臧国忠亓鹏赵明磊明保全 SchoolofPhysicsandMicroelectronics NationalKeyLaboratoryofCrystalMaterialsShandongUniversityJinan250100China

The effects of barium on electrical and dielectric properties of the SnO2·***2O5 varistor system sintered at 1250℃ for 60min were investigated. It is found that barium significantly improves the nonlinear properties. The breakdown electrical field increases from 378.0 to 2834.5V/mm, relative dielectric constant (at 1kHz) falls from 1206 to 161 and the resistivity (at 1kHz) rises from 60.3 to 1146.5kΩ·cm with an increase of BaCO3 concentration from 0mol%to 1.00mol%. The sample with 1.00mol% barium has the best nonlinear electrical property and the highest nonlinear coefficient (α=29.2). A modified defect barrier model is introduced to illustrate the grain-boundary barrier formation of barium-doped SnO2-based varistors.

关键词： varistors tin oxide electrical and dielectric properties barium carbonate

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