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electric field dependence of spin qubit in a Si-MOS quantum dot

Chinese Physics B 2024年第6期33卷 248-253页

作者：马荣龙倪铭周雨晨孔真真王桂磊刘頔罗刚曹刚李海欧郭国平 CAS Key Laboratory of Quantum Information University of Science and Technology of ChinaHefei 230026China CAS Center for Excellence in Quantum Information and Quantum Physics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Beijing Superstring Academy of Memory Technology Beijing 100176China Hefei National Laboratory University of Science and Technology of ChinaHefei 230088China Origin Quantum Computing Company Limited Hefei 230026China

Valley, the intrinsic feature of silicon, is an inescapable subject in silicon-based quantum computing. At the spin–valley hotspot, both Rabi frequency and state relaxation rate are significantly enhanced. With protection against charge noise, the valley degree of freedom is also conceived to encode a qubit to realize noise-resistant quantum ***, based on the spin qubit composed of one or three electrons, we characterize the intrinsic properties of valley in an isotopically enriched silicon quantum dot(QD) device. For one-electron qubit, we measure two electric-dipole spin resonance(EDSR) signals which are attributed to partial occupation of two valley states. The resonance frequencies of two EDSR signals have opposite electric field dependences. Moreover, we characterize the electric field dependence of the upper valley state based on three-electron qubit experiments. The difference of electric field dependences of the two valleys is 52.02 MHz/V, which is beneficial for tuning qubit frequency to meet different experimental requirements. As an extension of electrical control spin qubits, the opposite electric field dependence is crucial for qubit addressability,individual single-qubit control and two-qubit gate approaches in scalable quantum computing.

关键词： silicon-based quantum computing valley electric-dipole spin resonance

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electrical manipulation of a hole‘spin'–orbit qubit in nanowire quantum dot:The nontrivial magnetic field effects

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Chinese Physics B 2023年第3期32卷 125-130页

作者：李睿张航 Key Laboratory for Microstructural Material Physics of Hebei Province School of ScienceYanshan UniversityQinhuangdao 066004China

Strong‘spin’–orbit coupled one-dimensional hole gas is achievable in a Ge nanowire in the presence of a strong magnetic *** strong magnetic field lifts the two-fold degeneracy in the hole subband dispersions,so that the effective low-energy subband dispersion exhibits strong spin–orbit ***,we study the electrical spin manipulation in a Ge nanowire quantum dot for both the lowest and second lowest hole subband *** a finite square well to model the quantum dot confining potential,we calculate exactly the level splitting of the spin–orbit qubit and the Rabi frequency in the electric-dipole spin *** spin–orbit coupling modulated longitudinal g-factor gso is not only non-vanishing but also magnetic field ***,the spin–orbit couplings of the lowest and second lowest subband dispersions have opposite magnetic dependences,so that the results for these two subband dispersions are totally *** should be noticed that we focus only on the properties of the hole‘spin’instead of the real hole spin.

关键词： quantum dot hole spin spin–orbit coupling electric-dipole spin resonance

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