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A generalized Norde plot for reverse biased Schottky contacts

International Journal of Minerals,Metallurgy and Materials 2012年第1期19卷 54-58页

作者： Chin-Min Hsiung Chuen-Shii Chou Ting-Lung Chiang Department of Mechanical Engineering Pingtung University of Science and Technology

When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit (IC) electronics field. The parameters of such contacts can be determined from their current-voltage (I-V) characteristics. The literature contains many proposals for extracting the contact parameters using graphical methods. However, such methods are generally applicable only to contacts with a forward bias, whereas many Schottky contacts actually operate under a reverse bias. Accordingly, the present study proposed a generalized reverse current-voltage (I-V) plot which enables the series resis-tance, barrier height, and ideality factor of a reverse biased Schottky contact to be extracted from a single set of I-V measurements. A theo-retical derivation of the proposed approach was presented and a series of validation tests were then performed. The results show that the proposed method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.

关键词： semiconductor materials integrated circuits electric contacts reverse bias Schottky barriers

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Effects of Different Plasma Energy Treatments on n-Type Al0.4Ga0.6N Material

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Chinese Physics Letters 2009年第7期26卷 267-269页

作者：杨凌郝跃周小伟马晓华 Key Laboratory of Wide Band Gap Semiconductor Material and Device Institute of Microelectronics Xidian University Xi'an 710071

El3ctronic properties, surface chemistry and surface morphology of plasma-treated n-Al0.4Ga0.6N material are studied by electrical contact measurements, atomic force microscopy and x-ray photoemission spectroscopy. Although excessive etching can cause the surface roughness to significantly increase, the nitrogen vacancies VN produced by the excessive etching can be compensated for by the negative effects of the rougher surface. Thus, VN produced by excessive etching plays a key role in Ohmic contact of high-A1 content AIGaN and it can reduce Ohmic contact resistance. The effect of rapid thermal annealing on the performance of n-Al0.4Ga0.6N can significantly reduce the etching damage caused by excessive etching.

关键词： PLASMA chemistry ELECTRONIC structure SURFACE chemistry ALUMINUM compounds electric contacts ATOMIC force microscopy SURFACE roughness electric resistance

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