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C_2F_6 /O_2 /Ar Plasma Chemistry of 60 MHz/2 MHz dual-frequency discharge and Its Effect on Etching of SiCOH Low-k Film

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Plasma Science and Technology 2012年第1期14卷 48-53页

作者：袁颖叶超陈天葛水兵刘卉敏崔进徐轶君邓艳红宁兆元 School of Physics Science and Technology Jiangsu Key Laboratory of Thin FilmsSoochow University

This work investigated C2F6/O2/Ar plasma chemistry and its effect on the etching characteristics of SiCOH low-k dielectrics in 60 MHz/2 MHz dual-frequency capacitively coupled discharge. For the C2F6/Ar plasma, the increase in the low-frequency （LF） power led to an increased ion impact, prompting the dissociation of C2F6 with higher reaction energy. As a result, fluorocarbon radicals with a high F/C ratio decreased. The increase in the discharge pressure led to a decrease in the electron temperature, resulting in the decrease of C2F6 dissociation. For the C2F6/O2/Ar plasma, the increase in the LF power prompted the reaction between 02 and C2F6, resulting in the elimination of CF3 and CF2 radicals, and the production of an F-rich plasma environment. The F-rich plasma improved the etching characteristics of SiCOH low-k films, leading to a high etching rate and a smooth etched surface.

关键词： fluorocarbon plasma dual-frequency discharge low-k films etching

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Effect of Low-frequency Power on F, CF_2 Relative Density and F/CF_2 Ratio in Fluorocarbon dual-frequency Plasmas

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Plasma Science and Technology 2010年第5期12卷 566-570页

作者：黄宏伟叶超徐轶君袁圆施国峰宁兆元 School of Physics Science and Technology Jiangsu Key Laboratory of Thin FilmsSoochow University

Effect of low-frequency power on F, CF2 relative density and F/CF2 ratio, in C2F6, C4F8 and CHF3 dual-frequency capacitively couple discharge driven by the power of 13.56 MHz/2 MHz, was investigated by using optical emission spectroscopy. High F, CF2 relative density and high F/CF2 ratio were obtained in a CHF3 plasma. But for C2F6 and C4Fs plasmas, the F, CF2 relative density and F/CF2 ratio all decreased significantly due to the difference in both reactive paths and reactive energy. The increase of LF power caused simultaneous increase of F and CF2 radical relative densities in C4Fs and CHF3 plasmas, but led to increase of F with the decrease in CF2 relative densities in C2F6 plasma due to the increase of lower energy electrons and the decrease of higher energy electrons in electron energy distribution function （EEDF）.

关键词： fluorocarbon plasma dual-frequency discharge low-k films etching

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