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Science China(Information Sciences) 2024年第4期67卷 341-342页

作者： Chunzhou SHI Ling YANG Meng ZHANG Hao LU Mei WU Bin HOU Xuerui NIU Qian YU Wenliang LIU Wenze GAO Xiaohua MA Yue HAO School of Advanced Materials and Nanotechnology Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology Xidian University

GaN-based high-electric-mobility transistors(HEMTs) have been investigated thoroughly because of their promising applications in high-frequency,-voltage, and-power applications. However, the theoretical material limit prevents conventional single-heterostructure GaN HEMTs from achieving high performance despite numerous efforts [1–3].

关键词： drain current

A 2-D semi-analytical model of double-gate tunnel field-effect transistor

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Journal of Semiconductors 2015年第5期36卷 24-30页

作者：许会芳代月花李宁徐建斌 Institute of Electronic and Information Engineering Anhui University

A 2-D semi-analytical model of double gate （DG） tunneling field-effect transistor （TFET） is proposed. By aid of introducing two rectangular sources located in the gate dielectric layer and the channel, the 2-D Poisson equation is solved by using a semi-analytical method combined with an eigenfunction expansion method. The expression of the surface potential is obtained, which is a special function for the infinite series expressions. The influence of the mobile charges on the potential profile is taken into account in the proposed model. On the basis of the potential profile, the shortest tunneling length and the average electrical field can be derived, and the drain current is then constructed by using Kane＇s model. In particular, the changes of the tunneling parameters Ak and Bk influenced by the drain-source voltage are also incorporated in the predicted model. The proposed model shows a good agreement with TCAD simulation results under different drain-source voltages, silicon film thicknesses, gate dielectric layer thicknesses, and gate dielectric layer constants. Therefore, it is useful to optimize the DG TFET and this provides a physical insight for circuit level design.

关键词： semi-analytical method eigenfunction expansion method double-gate tunnel field effect transistor （TFET） surface potential drain current

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Freestanding a-Si Thin Film Transistor for Room-Temperature Infrared Detection

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Chinese Physics Letters 2004年第2期21卷 262-265页

作者：董良岳瑞峰刘理天张万杰 InstituteofMicroelectronics TsinghuaUniversityBeijing100084

We present the fabrication and characterization of a novel uncooled infrared sensor for room-temperature infrared imaging. The sensitive element of the sensor is a freestanding amorphous silicon thin film transistor (a-Si TFT) with the temperature coefficient of the drain current (TCC) of 0.015–0.08/K. The TCC value is sensitive to the ambient temperature and can be controlled by the gate voltage of the a-Si TFT. The complete procedures based on the porous silicon micromachining technique for fabricating thermally isolated air bridges are described. The isolation structures have a thermal conductance of 5×10−6W/K and a thermal capacitance of 4.9×10−8J/K. The effects of the gate voltage on the performance figures such as responsivity, noise voltage and detectivity are described and analysed in detail. The maximum detectivity reaches 4.33×108cmHz1/2W−1 at a chopping frequency of 27Hz and a gate voltage of -15V.

关键词： drain current

On-current modeling of short-channel double-gate(DG) MOSFETs with a vertical Gaussian-like doping profile

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Journal of Semiconductors 2013年第5期34卷 46-53页

作者： Sarvesh Dubey Pramod Kumar Tiwari S.Jit Department of Electronics Engineering Indian Institute of Technology(BHU)Varanasi-221005India Department of Electronics and Communication Engineering National Institute of Technology Rourkela-769008India

An analytic drain current model is presented for doped short-channel double-gate MOSFETs with a Gaussian-like doping profile in the vertical direction of the channel. The present model is valid in linear and satura- tion regions of device operation. The drain current variation with various device parameters has been demonstrated. The model is made more physical by incorporating the channel length modulation effect. Parameters like transcon- ductance and drain conductance that are important in assessing the analog performance of the device have also been formulated. The model results are validated by numerical simulation results obtained by using the commercially available ATLAS^TM, a two dimensional device simulator from SILVACO.

关键词： drain current DG MOSFET transconductance drain conductance

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Modeling of Noise Power Spectral Density Analysis for GaN/AlGaN HEMT

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Journal of Applied Mathematics and Physics 2016年第10期4卷 1906-1915页

作者： Palanichamy Vimala L. Vidyashree Department of Electronics and Communication Engineering Dayananda Sagar College of Engineering Bangalore India

Nano Technology is the branch of technology that deals with dimensions and tolerances in terms of nanometers. In this paper, the electrical characteristics analysis is determined for the Nano-GaN HEMT and Micro-GaN HEMT and also power spectrum density is determined for GaN Nano-HEMT by reducing the gate length Lg in nm range. The GaN Nano HEMT is producing high current comparing to Micro GaN HEMT. Accuracy of the proposed analytical model results is verified with simulation results.

关键词： HEMT GaN/AlGaN 2DEG drain current Noise Power Spectrum Density

A compact two-dimensional analytical model of the electrical characteristics of a triple-material double-gate tunneling FET structure

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Journal of Semiconductors 2019年第12期40卷 135-141页

作者： C.Usha P.Vimala Department of Electronics and Communication Engineering Dayananda Sagar College of Engineering

This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source.The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage,lateral and vertical electric field.Because the TMDG TFET has a simple compact structure,the surface potential is computationally efficient and,therefore,may be utilized to analyze and characterize the gate-controlled devices.Furthermore,using Kane's model,the current across the drain can be modeled.The graph results achieved from this device model are close to the data collected from the technology computer aided design(TCAD)simulation.

关键词： triple-material double-gate TFET surface potential lateral and vertical electric field drain current TCAD simulation

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The Ferroelectric Field Effect Transistor Simulation and Analysis

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The Ferroelectric Field Effect Transistor Simulation and Ana...