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double-ended passivator enables dark-current-suppressed colloidal quantum dot photodiodes for CMOS-integrated infrared imagers

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InfoMat 2024年第1期6卷 108-122页

作者： Peilin Liu Shuaicheng Lu Jing Liu Bing Xia Gaoyuan Yang Mo Ke Xuezhi Zhao Junrui Yang Yuxuan Liu Ciyu Ge Guijie Liang Wei Chen Xinzheng Lan Jianbing Zhang Liang Gao Jiang Tang Wuhan National Laboratory for Optoelectronics(WNLO)and School of Optical and Electronic Information Huazhong University of Science and TechnologyWuhanthe People's Republic of China Wenzhou Advanced Manufacturing Technology Institute Huazhong University of Science and TechnologyWenzhouthe People's Republic of China School of Physics and Electronic Engineering Hubei University of Arts and ScienceXiangyangthe People's Republic of China School of Integrated Circuits Huazhong University of Science and TechnologyWuhanthe People's Republic of China School of Engineering Physics Shenzhen Technology UniversityShenzhenthe People's Republic of China Optics Valley Laboratory Wuhanthe People's Republic of China Shenzhen Huazhong University of Science and Technology Research Institute Shenzhenthe People's Republic of China

Lead sulfide(PbS)colloidal quantum dot(CQD)photodiodes integrated with silicon-based readout integrated circuits(ROICs)offer a promising solution for the next-generation short-wave infrared(SWIR)imaging *** their potential,large-size CQD photodiodes pose a challenge due to high dark currents resulting from surface states on nonpassivated(100)facets and trap states generated by CQD *** this work,we present a novel approach to address this issue by introducing double-ended ligands that supplementally passivate(100)facets of halidecapped large-size CQDs,leading to suppressed bandtail states and reduced defect *** results demonstrate that the dark current density is highly suppressed by about an order of magnitude to 9.6 nA cm^(2) at -10 mV,which is among the lowest reported for PbS CQD ***,the performance of the photodiodes is exemplary,yielding an external quantum efficiency of 50.8%(which corresponds to a responsivity of 0.532 A W^(-1))and a specific detectivity of 2.5×10^(12) Jones at 1300 *** integrating CQD photodiodes with CMOS ROICs,the CQD imager provides high-resolution(640×512)SWIR imaging for infrared penetration and material discrimination.

关键词： CMOS integration colloidal quantum dots dark current suppression double-ended passivation infrared imager

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