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dose rate effects on shape memory epoxy resin during 1 Me V electron irradiation in air

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Journal of Materials Science & Technology 2021年第8期67卷 61-69页

作者： Longyan Hou Yiyong Wu Debin Shan Bin Guo Yingying Zong State Key Laboratory of Advanced Welding and Joining Harbin Institute of TechnologyHarbin 150001China National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environments Harbin Institute of TechnologyHarbin 150001China

The effects of 1 Me V electron irradiation in air at a fixed accumulated dose and dose rates of 393.8,196.9,78.8,and 39.4 Gy s^(-1)on a shape memory epoxy(SMEP)resin were *** low-dose-rate irradiation,accelerated degradation of the shape memory performance was observed;specifically,the shape recovery ratio decreased exponentially with increasing irradiation time(that is,with decreasing dose rate).In addition,the glass transition temperature of the SMEP,as measured by dynamic mechanical analysis,decreased overall with decreasing dose *** dose rate effects of 1 Me V electron irradiation on the SMEP were confirmed by structural analysis using electron paramagnetic resonance(EPR)spectroscopy and Fourier transform infrared(FTIR)*** EPR spectra showed that the concentration of free radicals increased exponentially with increasing irradiation ***,the FTIR spectra showed higher intensities of the peaks at 1660 and 1720 cm^(-1),which are attributed to stretching vibrations of amide C=O and ketone/acid C=O,at lower dose *** intensities of the IR peaks at 1660 and 1720 cm^(-1) increased exponentially with increasing irradiation time,and the relative intensity of the IR peak at 2926 cm^(-1)decreased exponentially with increasing irradiation *** solid-state13 C nuclear magnetic resonance(NMR)spectra of the SMEP before and after 1 Me V electron irradiation at a dose of 1970 k Gy and a dose rate of 78.8 Gy s^(-1) indicated damage to the CH_(2)–N groups and aliphatic isopropanol *** result is consistent with the detection of nitrogenous free radicals,a phenoxy-type free radical,and several types of pyrolytic carbon radicals by *** the subsequent propagation process,the free radicals produced at lower dose rates were more likely to react with oxygen,which was present at higher concentrations,and form the more destructive peroxy free radicals and oxidation products such as acids,amides,and *** increase in peroxy

关键词： Shape memory epoxy resin Shape memory effect Electron irradiation dose rate effect Free radical Chain scission

Laser-assisted Simulation of dose rate effects of Wide Band Gap Semiconductor Devices

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原子能科学技术 2023年第12期57卷 2314-2325页

作者： TANG Ge XIAO Yao SUN Peng LIU Jingrui ZHANG Fuwang LI Mo Chengdu University of Technology Chengdu 610059China University of Electronic Science and Technology of China Chengdu 610054China Microsystem&Terahertz Research Center of CAEP Chengdu 621000China

Laser-assisted simulation technique has played a crucial role in the investigation of dose rate effects of silicon-based devices and integrated circuits,due to its exceptional advantages in terms of flexibility,safety,convenience,and *** recent years,wide band gap materials,known for their strong bonding and high ionization energy,have gained increasing attention from researchers and hold significant promise for extensive applications in specialized ***,there is a growing need for comprehensive research on the dose rate effects of wide band gap *** response to this need,the use of laser-assisted simulation technology has emerged as a promising approach,offering an effective means to assess the efficacy of investigating these materials and *** paper focused on investigating the feasibility of laser-assisted simulation to study the dose rate effects of wide band gap semiconductor *** conversion factors for laser-assisted simulation of dose rate effects of GaN-based and SiC-based devices were been ***,to validate the accuracy of the conversion factors,pulsed laser and dose rate experiments were conducted on GaN-based and SiC-based PIN *** results demonstrate that pulsed laser radiation andγ-ray radiation can produce highly similar photocurrent responses in GaN-based and SiC-based PIN diodes,with correlation coefficients of 0.98 and 0.974,*** finding reaffirms the effectiveness of laser-assisted simulation technology,making it a valuable complement in studying the dose rate effects of wide band gap semiconductor devices.

关键词： laser-assisted simulation dose rate effect wide band gap semiconductor conversion factor

Total ionizing dose effects on 12-bit CBCMOS digital-to-analog converters

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Journal of Semiconductors 2013年第12期34卷 53-59页

作者：王信陆妩郭旗吴雪席善斌邓伟崔江维张晋新 Xinjiang Technical Institute of Physics & Chemistry Chinese Academy of Sciences Xinjiang Key Laboratory of Electronic Information Materials and Devices University of Chinese Academy of Sciences

A digital-to-analog converter （DAC） in CBCMOS technology was irradiated by 60Co F-rays at various dose rates and biases for investigating the ionizing radiation response of the DAC. The radiation responses show that the function curve and the key electrical parameters of the DAC in CBCMOS technology are sensitive to total dose and dose rates. Under different bias conditions, the radiation failure levels were different, and the radiation damage under operation bias conditions was more severe. Finally, test results were preliminarily analyzed by relating the failure mode to DAC architecture and process technology.

关键词： digital-to-analog CBCMOS dose rate effect ionizing radiation