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Science China(Technological Sciences) 1998年第1期41卷 1-5页

作者：赵根祥钱树安陶琨 1. Shanxi Institute of Coal Chemistry Chinese Academy of Sciences 030001 Talyuan China 2. Department of Materials Science Tsinghua University 100084 Beijing China

The structural characteristics of the graphitized carbon microcrystal prepared from carbonized polyimide (PI) film were explored using X-ray diffraction.technique. The experimental results show that the graphitization of the thin film was initiated by heat treatment around 2 100°C; the carbon layers of the thin film specimens heat-treated at 2 825°C and above possessed good orientation, the phenomenon of poly-phase graphitization appeared markedly, and the information of the mosaic structure of the sample was obtained; the interlayer spacing and the mosaic degree for 3 160°C heat-treated thin film samples are 0.335 45 nm and 5.4°, respectively. As far as the source of two crystal phases with a slight difference in graphitization degree is concerned, some inferences are discussed, which helps understand more about the structure of the graphitization products.

关键词： PI film graphitization carbon microcrystal mosaic structure X-ray diffraction.

DEVIATION FROM BRAGG LAW AND EDGE EFFECT IN DOUBLE-CRYSTAL diffraction

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Science China Mathematics 1991年第11期34卷 1378-1387页

作者：李润身 Shanghai Institute of Metallurgy Academia Sinica Shanghai 200050 PRC

A more precise expression for the angular deviation from the Bragg law and the angularrange of X-ray diffracted by perfect crystal are derived. The critical angle of the total re-flection of X-ray from the surface of crystal is obtained naturally by the new expressions,which well coincides with that deduced in optics in consideration of the refraction. Twopeaks appear on the rocking curve when X-rays shoot at the surface at a small glancing angleand simultaneously on the side of crystal although the double-crystal is in (n, -n) setting,which is called the "edge effect". The angle between these two peaks on the rocking curvecan be used to measure the number of electrons in an unit cell of crystal.

关键词： angular deviation Bragg law edge effect diffraction.

Reactive Deposition Epitaxial Growth ofβ-FeSi_(2) Film on Si(001):in situ Observation by Reflective High Energy Electron diffraction

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Chinese Physics Letters 1995年第10期12卷 613-616页

作者： WANG Lianwei LIN Chenglu SHEN Qinwo NI Rushan ZOU Shichang State Key Laboratory of Functional Materials for Informatics Shanghai Institute of MetallurgyAcademia SinicaShanghai 200050

Reactive deposition epitaxial growth ofβ-FeSi_(2) film on Si(001)has been studied by in situ observation of reflective high energy electron *** strained phase was observed at initial *** roughness due to the islanding was observed during the *** existed great tendency to transform the alignment of the orientation of crystallites into random as the thickness of deposited iron increased.

关键词： diffraction. deposition. Electron

Structural study of sputtered nanocrystalline Ti and Zr by X-ray diffraction

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Chinese Science Bulletin 1997年第22期42卷 1880-1883页

作者： Shi, WZ Yao, RH Lin, KX Lin, XY Shantou Univ Dept Phys Shantou 515063 Peoples R China

Ti and Zr are extensively used as gas absorbent for obtaining ultrahigh vacuum because of

关键词： nanocrystalline Ti and Zr structure X-ray diffraction.

X-ray diffraction.Study on the Superconducting Thin Films YBCO in a Monodispersed System

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Chinese Science Bulletin 1993年第1期38卷 23-26页

作者：张玉苓梁敬魁程德书李玉书陈宗淇成向荣解思深崔长庚李山林 Institute of Physics Academia Sinica Beijing 100080 PRC Institute of Photographic Chemistry Academia Sinica Beijing 100101 PRC. Qingdao Institute of Chemical Engineering Qingdao 266071 PRC.

The preparations of superconducting thin films by DC, RF sputtering, laser evaporation and the MOCVD method have been reported. In order to extend the applications of high Tc superconducting thin films in industry, a ... 详细信息

关键词： monodispersed homogeneous sol X-ray diffraction.

Growth and Characterization of High Quality Si_(1-x-y)Ge_(x)C_(y) Alloy Grown by Ultra-High Vacuum Chemical Vapor Deposition

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Chinese Physics Letters 1999年第10期16卷 750-752页

作者： QI Zhen HUANG Jing-yun YE Zhi-zhen LU Huan-ming CHEN Wei-hua ZHAO Bing-hui WANG Lei State Key Laboratory of Silicon Materials Zhejiang UniversityHangzhou 310027

High quality Si_(1-x-y)Ge_(x)C_(y) alloy with 2.2%C is grown at a relatively high temperature(760℃)on Si(100)using ultra-high vacuum/chemical vapor deposition(UHV/CVD)*** samples are investigated with high resolution cross-sectioned transmission electron microscope and x-ray *** with Si_(1-x)Ge_(x) alloys,Si_(1-x-y)Ge_(x)C_(y) alloys with small amounts of Chave much less strain and larger critical layer *** quality of interface is edso *** flat growing profiles of the film are confirmed by secondary ion mass *** transform infrared spectroscopy is also used to testify that the carbon atoms are on the substitutional *** is proved that the UHV/CVD system is an efficient method of growing Si_(1-x-y)Ge_(x)C_(y) alloys.

关键词： spectroscopy. diffraction. alloys

Colossal Magnetoresistance Without Double Exchange Mechanism in Spinel FeCr_(2)S_(4)

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Chinese Physics Letters 1999年第7期16卷 532-534页

作者： SHI Lei DONG Qiu-zhao YANG Zhao-rong CHEN Zhi-wen ZHANG Yu-heng Structure Research Laboratory University of Science and Technology of ChinaHefei 230026 Center for Advanced Studies in Science and Technology of Microstructures Nanjing UniversityNanjing 210093

The crystal structure of spinel FeCr_(2)S_(4), which shows a semiconductor-metal transition and paramagnetic-ferrimagnetic transition at T_(c)=170 K,was determined by x-ray powder *** is found that the spinel FeCi_(2)S_(4) belongs to a normal spinel structure [Fe^(2+)]_(t)[Cr^(3+)_(2)]_(0)S_(4).The result clearly shows that the spinel FeCr_(2)S_(4) has neither mixed valence of Fe^(3+)and Fe^(2+)ions or Cr^(3+)and Cr^(2+) ions for a double-exchange magnetic interaction, nor a Jahn-Teller cation such as Cr^(3+).The spinels represent a distinct class of colossal magnetoresistance materials,with magnetic ordering driven by superexchange rather than double exchange.

关键词： diffraction. resistance magnetic

Two Crystal Phases of C3N4 Found in Carbon Nitride Films Prepared by Ion Implantation

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Chinese Physics Letters 1996年第10期13卷 782-785页

作者： GU You-song PAN Li-qing ZHAO Min-xue CHANG Xiang-rong TIAN Zhong-zhuo XIAO Ji-mei Department of Material Physics and State Key Laboratory of New Metal MaterialsBeijing University of Sciences and TechnologyBeijing 100083

CNx films prepared by high dose ion implantation and post-annealing were studied by Auger electron spectroscopy,x-ray photoelectron spectroscopy and x-ray diffraction.A nearly uniform CNx layer was *** and nitrogen were found covalently bonded in the films.X-ray diffraction.results showed that two crystal phases of C_(3)N_(4),β-C_(3)N_(4) and p-C_(3)N_(4),have been formed in the matrix of carbon.

关键词： diffraction. implantation spectroscopy

Determination of the Lattice Parameters of a Si Nanobelt in a Tensile Test Process Using an MEMS Actuator

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Chinese Physics Letters 2012年第12期29卷 141-144页

作者： ZENG Hong-Jiang LI Tie JIN Qin-Hua XU Fang-Fang WANG Yue-Lin Science and Technology on Micro-system Laboratory State Key Laboratories of Transducer TechnologyShanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050 Department of Precision Machinery and Precision Instrumentation University of Science and Technology of ChinaHefei 230026 Analysis and Testing Center for Inorganic Materials Shanghai Institute of CeramicsChinese Academy of SciencesShanghai 200050

We present an experimental method for in-situ observation of the lattice behavior of a single crystal silicon nanobelt during uniaxial tensile *** in-situ silicon nanobelt tensile testing device for transmission electron microscopy is *** behavior and lattice parameters of the nanobelt are studied using selected area electron diffraction.A statistical and least square methods are used for reducing the measurement errors of the lattice *** results suggest that the trends of the lattice parameters during the tensile test are in agreement with the increasing tensile stress in the silicon ***,the local strain calculated from lattice parameters and the average strain of the nanobelt are compared.

关键词： diffraction. strain belt

Heteroepitaxial Growth of Single-Crystalline Diamond Film

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Chinese Physics Letters 1998年第11期15卷 819-821页

作者： WANG Qi-min CHEN Qing-gui SHI Ri-hua DONG Rong-kang NI Ru-shan ZHU Ji-qian State Key Laboratory of Transducer Technology Shanghai Institute of MetallurgyChinese Academy of SciencesShanghai 200050

Using high temperature heteroepitaxial growth method the single-crystalline diamond film growth conditions have been studied by Raman spectrum and transmission electron *** temperature,low alcohol concentration,slow gas flow velocity,long epitaxial time and substrate located near the gas exit side on the susceptor are the favourable conditions for growing single-crystalline diamond film.

关键词： diffraction. film. epitaxial