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Pushing the limit of high-Q mode of a single dielectric nanocavity

Advanced Photonics 2021年第1期3卷 93-101页

作者： Lujun Huang Lei Xu Mohsen Rahmani Dragomir Neshev Andrey E.Miroshnichenko University of New South Wales School of Engineering and Information Technology Nottingham Trent University School of Science and Technology Department of Engineering Advanced Optics and Photonics Laboratory The Australia National University Research School of Physics Department of Electronic Material Engineering ARC Centre of Excellence for Transformative Meta-Optical Systems (TMOS)

High-index dielectric resonators support different types of resonant modes. However, it is challenging to achieve a high-Q factor in a single dielectric nanocavity due to the non-Hermitian property of the open system. We present a universal approach of finding out a series of high-Q resonant modes in a single nonspherical dielectric cavity with a rectangular cross section by exploring the quasi bound-state-in-thecontinuum(QBIC). Unlike conventional methods relying on heavy brutal force computations(i.e., frequency scanning by the finite difference time domain method), our approach is built upon Mie mode engineering,through which many high-Q modes can be easily achieved by constructing avoid-crossing(or crossing) of the eigenvalue for pair-leaky modes. The calculated Q-factor of mode TE(5,7) can be up to Qtheory=2.3 × 104for a freestanding square nanowire(NW)(n = 4), which is 64 times larger than the highest Q-factor(Qtheory≈ 360)reported so far in a single Si disk. Such high-Q modes can be attributed to suppressed radiation in the corresponding eigenchannels and simultaneously quenched electric(magnetic) field at momentum *** a proof of concept, we experimentally demonstrate the emergence of the high-Q resonant modes[Q ≈ 211 for mode TE(3,4), Q ≈ 380 for mode TE(3,5), and Q ≈ 294 for mode TM(3,5)] in the scattering spectrum of a single silicon NW.

关键词： Mie resonance leaky mode quasi bound state in the continuum high-Q mode dielectric nanocavity

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