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Probe the Effects of Surface Adsorbates on ZnO Nanowire Conductivity using dielectric force microscopy

Chinese Journal of Chemical Physics 2014年第5期27卷 582-586,I0004页

作者：陈琪卢威吴昱昆丁怀义王兵陈立桅中国科学技术大学合肥微尺度物质科学国家实验室(筹) 合肥230026 中国科学院苏州纳米技术与纳米仿生研究所纳米研究国际实验室苏州215123 中国科学技术大学物理系合肥230026

Characterization of electric properties of nanomaterials usually involves fabricating field effect transistors （FET） and deriving materials properties from device performances. However, the quality of electrode contacts in FET devices heavily influences the device performance, which makes it difficult to obtain the intrinsic electric properties of nanomaterials. dielectric force microscopy （DFM）, a contactless method developed recently, can detect the low-frequency dielectric responses of nanomaterials without electric contact, which avoids the influence of electric contact and can be used to study the intrinsic conductivity of nanomaterials. Here we study the influences of surface adsorbates on the conductivity of ZnO nanowires （NWs） by using FET and DFM methods. The conductivity of ZnO NW is much larger in N2 atmosphere than that in ambient environment as measured by FET device, which is further proven by DFM measurement that the ZnO NW exhibits larger dielectric response in N2 environment, and the influence of electrode contacts on measurement can be ruled out. Based on these results, it can be concluded that the adsorbates on ZnO NW surface highly influence the conductivity of ZnO NW rather than the electrode contact. This work also verifies the capability of DFM in measuring electric properties of nanomaterials.

关键词： dielectric force microscopy ZnO nanowire Field-effect transistor Surface adsorbate

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Quantitative measurement of the charge carrier concentration using dielectric force microscopy

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Chinese Physics B 2023年第3期32卷 449-455页

作者：赖君奇陈博文邢志伟李雪飞陆书龙陈琪陈立桅 i-Lab CAS Center for Excellence in NanoscienceSuzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China School of Nano-Tech and Nano-Bionics University of Science and Technology of ChinaHefei 230026China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-Tech and Nano-BionicsChinese Academy of SciencesSuzhou 215123China In-situ Center for Physical Sciences School of Chemistry and Chemical EngineeringShanghai Jiao Tong UniversityShanghai 200240China

The charge carrier concentration profile is a critical factor that determines semiconducting material properties and device *** force microscopy(DFM)has been previously developed to map charge carrier concentrations with nanometer-scale spatial ***,it is challenging to quantitatively obtain the charge carrier concentration,since the dielectric force is also affected by the ***,we quantitative measured the charge carrier concentration at the saturation mobility regime via the rectification effect-dependent gating ratio of *** measuring a series of n-type GaAs and GaN thin films with mobility in the saturation regime,we confirmed the decreased DFM-measured gating ratio with increasing electron *** with numerical simulation to calibrate the tip–sample geometry-induced systematic error,the quantitative correlation between the DFM-measured gating ratio and the electron concentration has been established,where the extracted electron concentration presents high accuracy in the range of 4×10^(16)–1×10^(18)cm^(-3).We expect the quantitative DFM to find broad applications in characterizing the charge carrier transport properties of various semiconducting materials and devices.

关键词： dielectric force microscopy charge carrier concentration quantitative measurement numerical simulation

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Contactless probing of the intrinsic carrier transport single-walled carbon nanotubes

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Nano Research 2014年第11期7卷 1623-1630页

作者： Yize Stephanie Li Jun Ge Jinhua Cai Jie Zhang Wei Lu Jia Liu Liwei Chen Suzhou Institute of Nano-Tech and Nono-Bionics Chinese Academy of Sciences Suzhou Jiongsu 215123 Chino Present address: Department of Materials Science and Engineering University of Wisconsin-Madison Madison W153 706 USA Present address: Molecular Foundry Lawrence Berkeley National Laboratory Berkeley CA 94720 USA

Intrinsic carrier transport properties of single-walled carbon nanotubes have been probed by two parallel methods on the same individual tubes： The contactless dielectric force microscopy （DFM） technique and the conventional field-effect transistor （FET） method. The dielectric responses of SWNTs are strongly correlated with electronic transport of the corresponding FETs. The DC bias voltage in DFM plays a role analogous to the gate voltage in FET. A microscopic model based on the general continuity equation and numerical simulation is built to reveal the link between intrinsic properties such as carrier concentration and mobility and the macroscopic observable, i.e. dielectric responses, in DFM experiments. Local transport barriers in nanotubes, which influence the device transport behaviors, are also detected with nanometer scale resolution.

关键词： single-walled carbon nanotubes electronic transport dielectric force microscopy field-effect transistor carrier density carrier mobility

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