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Adhesive strength of CVD diamond thin films quantitatively measured by means of the bulge and blister test

Journal of University of Science and Technology Beijing 2008年第4期15卷 474-479页

作者： Daohui Xiang Ming Chen Yuping Ma Fanghong Sun School of Mochanical Engineering Shanghai Jiaotong University Shanghai 200240 China School of Mechanical and Power Engineering Henan Polytechnic University Jiaozuo 454000 China

Large advancement has been made in understanding the nucleation and growth of chemical vapor deposition （CVD） diamond, but the adhesion of CVD diamond to substrates is poor and there is no good method for quantitative evaluation of the adhesive strength. The blister test is a potentially powerful tool for characterizing the mechanical properties of diamond films. In this test, pressure was applied on a thin membrane and the out-of-plane deflection of the membrane center was measured. The Young＇s modulus, residual stress, and adhesive strength were simultaneously determined using the load-deflection behavior of a membrane. The free-standing window sample of diamond thin films was fabricated by means of photolithography and anisotropic wet etching. The research indicates that the adhesive strength of diamond thin films is 4.28±0.37 J/m^2. This method uses a simple apparatus, and the fabrication of samples is very easy.

关键词： diamond thin films adhesive strength chemical vapor deposition (CVD) elastic modulus

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Fabrication and Application of High Quality diamond-coated Tools

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厦门大学学报（自然科学版） 2002年第S1期41卷 32-33页

作者： SUN Fang-hong 1, ZHANG Zhi-ming 2, CHEN Ming 1, SHEN He-sheng 2 (1. School of Mechanical Engineering, Shanghai Jiaotong University, 2.Institute of Microelectronics Technology, Shanghai Jiaotong University, Shanghai 200030, China)

diamond-coated tools were fabricated using Co-cemented carbide inserts as substrates by the electronically aided hot filament chemical vapor deposition (EACVD). An amount of additive in an acid solution was used to promote the Co etching of the substrate surface. The surface of the WC-Co substrate was decarburized by microwave plasma with Ar-H 2 gas. Effect of the new substrate pretreatment on the adhesion of diamond films was investigated. A boron-doped solution was brushed on the tool surface to diffuse boron into the substrates during diamond deposition. A new process was used to lower the surface roughness of diamond thin films by appropriately controlling deposition parameters. It consists of a composite diamond film chemical vapor deposition procedure including first the deposition of the rough polycrystalline diamond and then the fine-grained diamond. The research results show that the pretreatment including both Co etching in acid solution and Ar-H 2 etching decarburization by microwave plasma is an effective method to enhance adhesive strength. An adequate amount of boron dopant solution can effectively suppress the cobalt diffusion to the surface and avoid the catalytic effect of Co at the high temperature. The composite film CVD process can deposit smooth diamond films with low surface roughness. It is of great significance for improvement of the cutting performances of diamond-coated tools using the above new technology to deposit diamond coatings with the low surface roughness and high adhesive strength on WC-Co substrates.

关键词： diamond thin films adhesive strength surface roughness

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Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system

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Chinese Physics B 2002年第3期11卷 298-301页

作者：费允杰周玉清等 StateKeyLaboratoryofSurfacePhysics CondensedPhysicsCenterInstituteofPhysicsChineseAcademyofSciencesBeijing100080China NationalLaboratoryforSuperconductivity InstituteofPhysicsC

%Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growthusing C60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth ofdiamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described. In order to increase thedensity of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is notbeneficial for improving the diamond nucleation. The multi-layers of C60 molecules, but not a monolayer, can increasethe density of diamond nuclei in the presence of H atoms.

关键词： diamond thin films scanning electron microscopy C60

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