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Annealing Effects on the Structural, Optical, and UV Photoresponse Properties of ZnO Nanostructures Prepared by RF-Magnetron Sputtering at Different deposition temperatures

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Acta Metallurgica Sinica(English Letters) 2015年第2期28卷 230-242页

作者： Husam S.Al-Salman M.J.Abdullah School of Physics University Sains Malaysia Department of Physics College of Science University of Basrah

Undoped ZnO nanostructures were deposited on SiO2/Si substrates via radio 11：equency magnetron sputtenng at different deposition temperatures （room temperature, 200, 300, and 400 ℃）. The prepared samples were annealed at 500 ℃ for 2 h under an N2 flow. The structural, surface morphological, optical, and photoresponse characteristics of ZnO nanostructures as deposited and after annealing were then investigated. The energy bandgaps of all samples after annealing （3.22-3.28 eV） decreased compared with those of the as-deposited specimens. The barrier height increased when the deposition temperature increased and reached 0.77 eV at 400 ℃ after annealing with a leakage current of 0.17 gA at a 5 V bias. The UV photodetector device which was deposited at the optimal temperature of 300 ℃, has 12.51 × 10^3% pho- tosensitivity, 2.259 pA dark current, 0.508 s response time, and 0.466 s recovery time. The dark current significantly decreased for all samples after annealing. The proposed UV photodetectors exhibit high performance, high photosensi- tivity, shorter response and recovery times, and excellent stability at lower bias voltages of 5 and 2 V.

关键词： Undoped ZnO UV photoresponse deposition temperatures Annealing effect

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Regulating Effect of Substrate Temperature on Sputteringgrown Ge/Si QDs under Low Ge deposition

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Journal of Wuhan University of Technology(Materials Science) 2024年第4期39卷 888-894页

作者：舒启江 YANG Linjing LIU Hongxing 黄鹏儒 Institute of Information Yunnan University of Chinese MedicineKunming 650500China Guangxi Key Laboratory of Information Materials and Guangxi Collaborative Innovation Center of Structure and Property for New Energy and Materials School of Material Science&EngineeringGuilin University of Electronic TechnologyGuilin 541004China

The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)*** experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large *** addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown *** results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.

关键词： Ge/Si QDs deposition temperatures evolution law photoelectric performance

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