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Effects of deposition pressure and plasma power on the growth and properties of boron-doped microcrystalline silicon films

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Chinese Physics B 2008年第4期17卷 1394-1399页

作者：陈永生杨仕娥汪建华卢景霄郜小勇谷景华郑文赵尚丽 Key Laboratory of Material Physics Department of PhysicsZhengzhou University Institute of Plasma Physics Chinese Academy of Sciences Depart of Materials Science and Engineering Wuhan Institute of Technology

Using diborane as doping gas, p-doped μc-Si：H layers are deposited by using the plasma enhanced chemical vapour deposition （PECVD） technology. The effects of deposition pressure and plasma power on the growth and the properties of μc-Si：H layers are investigated. The results show that the deposition rate, the electrical and the structural properties are all strongly dependent on deposition pressure and plasma power. Boron-doped μc-Si：H films with a dark conductivity as high as 1.42 Ω^-1·cm^-1 and a crystallinity of above 50% are obtained. With this p-layer, μc-Si：H solar cells are fabricated. In addition, the mechanism for the effects of deposition pressure and plasma power on the growth and the properties of boron-doped μc-Si：H layers is discussed.

关键词： boron-doped μc-Si:H films thin film solar cells Raman crystallinity dark conductivity

Annealing effect on optical and electronic properties of silicon rich amorphous silicon-carbide films

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Frontiers of Optoelectronics 2012年第1期5卷 107-111页

作者： Shuxin LI Yunjun RUI Yunqing CAO Jun XU Kunji CHEN Nanjing National Laboratory of Microstructures School of Electronic Science and EngineeringSchool of PhysicsNanjing UniversityNanjing 210093China Department of Applied Physics Nanjing University of TechnologyNanjing 210009China

A series of Si-rich amorphous silicon carbide （a-SiC：H） thin films were deposited in conventional plasma enhanced chemical vapor deposition system with various gas ratio R = [CH4]/[SiH4]. The microstructural, optical and electronic properties of as-deposited films were investigated in this study. It was found that optical band gap was linearly proportional to carbon content in the films and it could be controlled in a range of 1.8-2.4 eV by changing the gas ratio, R. Both dark and photo conductivities in room temperature were decreased with the increasing of carbon content in the films, and the photosensitivity reached as high as 104 for the film with the optical band gap of 1.96 eV. The as-deposited samples were subsequently annealed at the temperatures of 900℃ and 1000℃. The formation of nanocrystalline silicon （nc- Si） dots in amorphous silicon carbide （a-SiC） host matrix was shown. The dark conductivity was enhanced by five orders of magnitude after annealing compared with that of as-deposited films. The result of temperature-dependent conductivity suggested that the property of carrier transport was dominated by conduction process between the extended states. Furthermore, room temperature electroluminescence （EL） was achieved from nc-Si/SiC system and the possible mechanism of radiative recombination mechanism was discussed.

关键词： amorphous silicon carbide (a-SiC) opticalband gap photo-conductivity dark conductivity electro-luminescence (EL)

Deposition of p-Type Microcrystalline Silicon Film and Its Application in Microcrystalline Silicon Solar Cells

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Journal of Semiconductors 2008年第11期29卷 2130-2135页

作者：陈永生杨仕娥汪建华卢景霄郜小勇谷锦华郑文赵尚丽郑州大学物理工程学院材料物理重点实验室郑州450052 中国科学院等离子体物理研究所合肥230031 武汉工程大学材料科学与工程学院武汉430073

Highly conductive boron-doped hydrogenated microcrystalline silicon （μc-Si： H） films and solar cells are pre- pared by plasma enhanced chemical vapour deposition （PECVD）. The effects of diborane concentration, thickness and substrate temperature on the growth and properties of B-doped layers and the performance of solar cells with high deposited rate i-layers are investigated. With the optimum p-layer deposition parameters, a higher efficiency of 5.5% is obtained with 0.78nm/s deposited i-layers. In addition, the carriers transport mechanism of p-type μc-Si： H films is discussed.

关键词： boron-doped μc-Si..H films Raman crystallinity dark conductivity solar cells