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Drain-engineered carbon-nanotube-film field-effect transistors with high performance and ultra-low current leakage

Nano Research 2020年第7期13卷 1875-1881页

作者： Lijun Liu Chenyi Zhao Li Ding Lianmao Peng Zhiyong Zhang Key Laboratory far the Physics and Chemistry of Nanodevices and Department of Electronics Peking UniversityBeijing 100871China

A small bandgap and light carrier effective mass(mo)lead to obv ous ambipolar transport behavior in carbon nanotube(CNT)fild-effect transistors(FE Ts),including a high off-state current and severe degradation of the subthreshold swing(SS)with increasing drain bias voltage.We demonstrate a drain-engineered method to cope with this common problem in CNT-film FETs with a sub-μum channel length,i.e.,suppressing the ambipolar behavion while maintaining high on-state performance by adopting a feedback gate(FBG)structure to extend the drain region from the CNT/metal contact to the proximate CNT channels to suppress the tunneling current.Sub-400-nm-channel-length FETs with a FBG structure statistially present a high on/off ratio of up to 10*and a sub-200 mV/dec SS under a high drain bias of up to-2 V whle maintaining a high on-state current of 0.2 mA/μm or a peak transconductance of 0.2 mS/um.By lowering the supply voltage to 1.5 V,FBG CNT-fim FETs can meet the requirement of standard-pertormance ultra large scale integrated circuits(ULSICs).Therefore,the introduction of the drain engineering structure enables applications of CNT-film-based FETs in ULSICs and could also be widely extended to other small-bandgap semiconductor-based FETs for an improvement in their off-state property.

关键词： carbon nanotube field-effect transistor current leakage subthreshold swing small bandgap semiconductor

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A Novel Method to Estimate current leakage of Laser Diodes

A Novel Method to Estimate Current Leakage of Laser Diodes

引用

2007 8th International Conference on Electronic Measurement & Instruments（ICEMI’2007）

作者： Zhang Shuang Guo Shuxu Gao Fengli (College of Electronic Science and Engineering,Jilin University,Changchun 130012,China)

The low frequency noise(LFN) properties are investigated on the high power 808nm InGaAsP/GaAs quantum well(QW) laser diodes under low bias current (10～10A) in order to estimate the current leakage of semiconductor lasers.For the first time,we investigate the LFN peak under very low bias current.After a short time electrical aging(50 or 150 hours),the right-shifted position of the LFN peak and annealing effect are observed.An equivalent circuit model considering of parallel shunt path is employed to interpret these experimental results.It is concluded that LFN peak under low injected current is sensitive to the mechanisms of microscopic current leakage, and can be used as an indicator of reliability of laser diodes.

关键词： laser diode current leakage reliability low frequency noise noise peak nondestructive test

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Annealing effect of platinum-incorporated nanowires created by focused ion/electron-beam-induced deposition

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Chinese Physics B 2014年第8期23卷 586-590页

作者：方靖岳秦石乔张学骜刘东青常胜利 College of Science National University of Defense Technology College of Aerospace and Material Engineering National University of Defense Technology

Focused ion-beam-induced deposition （FIBID） and focused electron-beam-induced deposition （FEBID） are conve- nient and useful in nanodevice fabrication. Since the deposition is from the organometallic platinum precursor, the con- ductive lines directly written by focused ion-beam （FIB） and focused electron-beam （FEB） are carbon-rich materials. We discuss an alternative approach to enhancing the platinum content and improving the conductivity of the conductive leads produced by FIBID and FEBID, namely an annealing treatment. Annealing in pure oxygen at 500 ℃ for 30 min enhances the platinum content values from ~ 18% to 30% and ~ 50% to 90% of FIBID and FEBID, respectively. Moreover, we find that thin films will be formed in the FIBID and FEBID processes. The annealing treatment is helpful to avoid the current leakage caused by these thin films. A single electron transistor is fabricated by FEBID and the current-voltage curve shows the Coulomb blockade effect.

关键词： electron-beam-induced deposition ion-beam-induced deposition annealing current leakage single electron transistor

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